Correlation of polysilicon thin-film transistor characteristics to defect states via thermal annealing

1994 ◽  
Vol 41 (3) ◽  
pp. 460-462 ◽  
Author(s):  
Horng Nan Chern ◽  
Chung Len Lee ◽  
Tan Fu Lei
Keyword(s):  
Thin Film ◽  
Thermal Annealing ◽  
Thin Film Transistor ◽  
Defect States

Rutile TiO2 active-channel thin-film transistor using rapid thermal annealing

2014 ◽  
Vol 65 (7) ◽  
pp. 1118-1121 ◽  
Author(s):  
Sung-Jin Kim ◽  
Kwan-Jun Heo ◽  
Su Chang Yoo ◽  
Seong Gon Choi ◽  
Seung Wook Chang
Keyword(s):  
Thin Film ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Thin Film Transistor ◽  
Rutile Tio2 ◽  
Active Channel

Analysis of Drain Currents During Switching off a-Si:H Based Thin Film Transistors

1998 ◽  
Vol 507 ◽  
Author(s):  
F. Lemmi ◽  
R. A. Street
Keyword(s):  
Thin Film ◽  
Fermi Level ◽  
Defect Density ◽  
Thin Film Transistor ◽  
Drain Current ◽  
Depletion Region ◽  
Time Range ◽  
Defect States ◽  
Current Decay ◽  
Decay Times

ABSTRACTWe present measurements and analysis of a-Si:H thin film transistor (TFT) transients when the gate voltage switches the device from a conducting to a non-conducting state. The drain current transient has been monitored in the medium-long (Ims-100s) time range and exhibits a power law decay extending to at least 10 seconds. The decay has been studied over a range of drain voltages and gate off-state voltages. Measured data show that the gate off-state can help to obtain a low drain leakage current at long times when high drain voltages are being used.However, the decay at low drain voltages shows little sensitivity to different gate off-state voltages. An analytical model is developed, based on the relaxation of the Fermi level toward mid-gap in a spatially uniform TFT channel. The model shows how deep defects are responsible for the current decay slope at long times, while shallower states determine the slope in the short time range. An energy-independent defect density would produce a 1/t slope for the current decay. Shallow states and deep states affect in opposite ways the slope since their density is energydependent in opposite ways as Fermi level moves deeper into the band-gap. Furthermore, long decay times are associated with a wider depletion region in the channel and increase the total number of defect states involved. A steeper decay than 1/t is expected and observed for shorttime ranges, while a more gradual (about 1/t1/2) one corresponds to long time measurements. The implications of the transient decay for the performance of active matrix arrays will be discussed.

Effects of Post Thermal Annealing on the Electrical Properties of Vertical Type Organic Thin Film Transistors Using Poly(3-hexylthiophene) and Its Application in Organic Light Emitting Transistor

2008 ◽  
Vol 8 (9) ◽  
pp. 4881-4884
Author(s):  
Se Young Oh ◽  
Sun Kak Hwang ◽  
Young Do Kim ◽  
Jong Wook Park ◽  
In Nam Kang
Keyword(s):  
Thin Film ◽  
Thermal Annealing ◽  
Carrier Mobility ◽  
Thin Film Transistor ◽  
Organic Thin Film ◽  
Static Characteristics ◽  
Electrically Conductive ◽  
Light Emitting ◽  
Organic Light ◽  
Type Transistor

We have fabricated the vertical type organic thin film transistor (OTFT) using electrically conductive poly(3-hexylthiophene) (P3HT) as a p-type organic material. Effects of post thermal annealing and thickness of active layer on the performance of vertical type transistors were investigated. Especially, the correlation between carrier mobility of P3HT after post thermal annealing and static characteristics of the transistor was studied. Carrier mobility was calculated by space charge limited current (SCLC) model from the I–V curves of the prepared device. The vertical type OTFT after post thermal annealing at 120 °C (Tg) showed high current of 0.383 mA and on–off ratio of 22.5 at a low gate voltage of +2.0 V. Additionally, we report on emission characteristics from the vertical type transistor using P3HT.

The effect of thermal annealing sequence on amorphous InGaZnO thin film transistor with a plasma-treated source–drain structure

2009 ◽  
Vol 517 (23) ◽  
pp. 6349-6352 ◽  
Author(s):  
Hyun Soo Shin ◽  
Byung Du Ahn ◽  
Kyung Ho Kim ◽  
Jin-Seong Park ◽  
Hyun Jae Kim
Keyword(s):  
Thin Film ◽  
Thermal Annealing ◽  
Thin Film Transistor ◽  
Amorphous Ingazno

Scanning Rapid Thermal Annealing Process for Poly Silicon Thin Film Transistor

2000 ◽  
Vol 39 (Part 1, No. 10) ◽  
pp. 5773-5775 ◽  
Author(s):  
Tae-Kyung Kim ◽  
Gi-Bum Kim ◽  
Yeo-Geon Yoon ◽  
Chang-Hoon Kim ◽  
Byung-Il Lee ◽  
...  
Keyword(s):  
Thin Film ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Thin Film Transistor ◽  
Annealing Process ◽  
Rapid Thermal Annealing Process ◽  
Silicon Thin Film ◽  
Poly Silicon ◽  
Thermal Annealing Process
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