Effects of thermal annealing on variations of electron traps in the channel region of amorphous In-Ga-Zn-O thin film transistor

2014 ◽  
Vol 32 (3) ◽  
pp. 031210 ◽  
Author(s):  
Aya Hino ◽  
Yasuyuki Takanashi ◽  
Hiroaki Tao ◽  
Shinya Morita ◽  
Mototaka Ochi ◽  
...  
Keyword(s):  
Thin Film ◽  
Thermal Annealing ◽  
Thin Film Transistor ◽  
Electron Traps ◽  
Channel Region

Characteristics of New Poly-Si Thin Film Transistor with a-Si Channel Region Near the Source/Drain

1998 ◽  
Vol 37 (Part 1, No. 3B) ◽  
pp. 1064-1066 ◽  
Author(s):  
Jae-Hong Jeon ◽  
Cheol-Min Park ◽  
Juhn-Suk Yoo ◽  
Cheon-Hong Kim ◽  
Min-Koo Han
Keyword(s):  
Thin Film ◽  
Thin Film Transistor ◽  
Channel Region ◽  
Si Thin Film

Rutile TiO2 active-channel thin-film transistor using rapid thermal annealing

2014 ◽  
Vol 65 (7) ◽  
pp. 1118-1121 ◽  
Author(s):  
Sung-Jin Kim ◽  
Kwan-Jun Heo ◽  
Su Chang Yoo ◽  
Seong Gon Choi ◽  
Seung Wook Chang
Keyword(s):  
Thin Film ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Thin Film Transistor ◽  
Rutile Tio2 ◽  
Active Channel

Effects of Post Thermal Annealing on the Electrical Properties of Vertical Type Organic Thin Film Transistors Using Poly(3-hexylthiophene) and Its Application in Organic Light Emitting Transistor

2008 ◽  
Vol 8 (9) ◽  
pp. 4881-4884
Author(s):  
Se Young Oh ◽  
Sun Kak Hwang ◽  
Young Do Kim ◽  
Jong Wook Park ◽  
In Nam Kang
Keyword(s):  
Thin Film ◽  
Thermal Annealing ◽  
Carrier Mobility ◽  
Thin Film Transistor ◽  
Organic Thin Film ◽  
Static Characteristics ◽  
Electrically Conductive ◽  
Light Emitting ◽  
Organic Light ◽  
Type Transistor

We have fabricated the vertical type organic thin film transistor (OTFT) using electrically conductive poly(3-hexylthiophene) (P3HT) as a p-type organic material. Effects of post thermal annealing and thickness of active layer on the performance of vertical type transistors were investigated. Especially, the correlation between carrier mobility of P3HT after post thermal annealing and static characteristics of the transistor was studied. Carrier mobility was calculated by space charge limited current (SCLC) model from the I–V curves of the prepared device. The vertical type OTFT after post thermal annealing at 120 °C (Tg) showed high current of 0.383 mA and on–off ratio of 22.5 at a low gate voltage of +2.0 V. Additionally, we report on emission characteristics from the vertical type transistor using P3HT.

The effect of thermal annealing sequence on amorphous InGaZnO thin film transistor with a plasma-treated source–drain structure

2009 ◽  
Vol 517 (23) ◽  
pp. 6349-6352 ◽  
Author(s):  
Hyun Soo Shin ◽  
Byung Du Ahn ◽  
Kyung Ho Kim ◽  
Jin-Seong Park ◽  
Hyun Jae Kim
Keyword(s):  
Thin Film ◽  
Thermal Annealing ◽  
Thin Film Transistor ◽  
Amorphous Ingazno

Scanning Rapid Thermal Annealing Process for Poly Silicon Thin Film Transistor

2000 ◽  
Vol 39 (Part 1, No. 10) ◽  
pp. 5773-5775 ◽  
Author(s):  
Tae-Kyung Kim ◽  
Gi-Bum Kim ◽  
Yeo-Geon Yoon ◽  
Chang-Hoon Kim ◽  
Byung-Il Lee ◽  
...  
Keyword(s):  
Thin Film ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Thin Film Transistor ◽  
Annealing Process ◽  
Rapid Thermal Annealing Process ◽  
Silicon Thin Film ◽  
Poly Silicon ◽  
Thermal Annealing Process
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