scholarly journals Effects of Thermal Annealing on La2O3 Gate Dielectric of InGaZnO Thin-Film Transistor

2015 ◽  
Vol 4 (9) ◽  
pp. Q44-Q46 ◽  
Author(s):  
X. D. Huang ◽  
J. Q. Song ◽  
P. T. Lai
Keyword(s):  
Thin Film ◽  
Thermal Annealing ◽  
Gate Dielectric ◽  
Thin Film Transistor

Effect of UV/ozone treatment on hysteresis of pentacene thin-film transistor with polymer gate dielectric

2009 ◽  
Vol 53 (6) ◽  
pp. 621-625 ◽  
Author(s):  
Jae Bon Koo ◽  
Seong Yeol Kang ◽  
In Kyu You ◽  
Kyung Soo Suh
Keyword(s):  
Thin Film ◽  
Gate Dielectric ◽  
Thin Film Transistor ◽  
Ozone Treatment ◽  
Uv Ozone

Metal Oxide Thin Film Transistor with Nano Inorganic Gate Dielectric : Material Chemistry, Nanoscience, Solution Processing and Electronics

2021 ◽  
Vol 23 (09) ◽  
pp. 1078-1085
Author(s):  
A. Kanni Raj ◽  
Keyword(s):  
Thin Film ◽  
Metal Oxide ◽  
Gate Dielectric ◽  
Dielectric Material ◽  
Thin Film Transistor ◽  
Sol Gel ◽  
Oxide Thin Film ◽  
Barium Zirconate ◽  
Operating Voltage ◽  
Metal Oxide Thin Film

Indium Lead Oxide (ILO) based Metal Oxide Thin Film Transistor (MOTFT) is fabricated with Lead Barium Zirconate (PBZ) gate dielectric. PBZ is formed over doped silicon substrate by cheap sol-gel process. Thin film PBZ is analysed with X-ray Diffraction (XRD), Ultra-Violet Visible Spectra (UV-Vis) and Atomic Force Microscope (AFM). IZO is used as bottom gate to contact Thin Film Transistor (TFT). This device needs only 5V as operating voltage, and so is good for lower electronics <40V. It shows excellent emobility 4.5cm2/V/s, with on/off ratio 5×105 and sub-threshold swing 0.35V/decade.

scholarly journals Pentacene-Based Thin Film Transistor with Inkjet-Printed Nanocomposite High-K Dielectrics

2012 ◽  
Vol 2012 ◽  
pp. 1-7 ◽  
Author(s):  
Chao-Te Liu ◽  
Wen-Hsi Lee ◽  
Jui-Feng Su
Keyword(s):  
Thin Film ◽  
Inkjet Printing ◽  
Gate Dielectric ◽  
Dielectric Film ◽  
Thin Film Transistor ◽  
Current Ratio ◽  
Large Current ◽  
High K ◽  
Dose Concentration ◽  
Top Contact

The nanocomposite gate insulating film of a pentacene-based thin film transistor was deposited by inkjet printing. In this study, utilizing the pearl miller to crumble the agglomerations and the dispersant to well stabilize the dispersion of nano-TiO2particles in the polymer matrix of the ink increases the dose concentration for pico-jetting, which could be as the gate dielectric film made by inkjet printing without the photography process. Finally, we realized top contact pentacene-TFTs and successfully accomplished the purpose of directly patternability and increase the performance of the device based on the nanocomposite by inkjet printing. These devices exhibited p-channel TFT characteristics with a high field-effect mobility (a saturation mobility of ̃0.58 cm2 V−1 s−1), a large current ratio (>103) and a low operation voltage (<6 V). Furthermore, we accorded the deposited mechanisms which caused the interface difference between of inkjet printing and spin coating. And we used XRD, SEM, Raman spectroscopy to help us analyze the transfer characteristics of pentacene films and the performance of OTFTs.

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