Breakdown-speed considerations in InP/InGaAs single- and double-heterostructure bipolar transistors

1993 ◽  
Vol 40 (1) ◽  
pp. 2-8 ◽  
Author(s):  
H.-F. Chau ◽  
D. Pavlidis ◽  
J. Hu ◽  
K. Tomizawa
Keyword(s):  
Bipolar Transistors ◽  
Double Heterostructure

Characteristics of Spike-Free Single and Double Heterostructure-Emitter Bipolar Transistors

2004 ◽  
Vol 43 (6A) ◽  
pp. 3285-3288 ◽  
Author(s):  
Yu-Shyan Lin ◽  
Wei-Chou Hsu ◽  
Fuh-Cheng Jong ◽  
Yu-Zung Chiou ◽  
Yeong-Jia Chen ◽  
...  
Keyword(s):  
Bipolar Transistors ◽  
Double Heterostructure

Current blocking in InP/InGaAs double heterostructure bipolar transistors

1996 ◽  
Vol 79 (5) ◽  
pp. 2771-2778 ◽  
Author(s):  
W. R. McKinnon ◽  
S. P. McAlister ◽  
Z. Abid ◽  
E. E. Guzzo
Keyword(s):  
Bipolar Transistors ◽  
Double Heterostructure ◽  
Current Blocking

InP/InGaAs double heterostructure bipolar transistors grown by MBE

1986 ◽  
Vol 22 (15) ◽  
pp. 781 ◽  
Author(s):  
P. Schuitemaker ◽  
P.A. Claxton ◽  
J.S. Roberts ◽  
T.K. Plant ◽  
P.A. Houston
Keyword(s):  
Bipolar Transistors ◽  
Double Heterostructure

High‐speed InP/InGaAs double‐heterostructure bipolar transistors with suppressed collector current blocking

1993 ◽  
Vol 62 (19) ◽  
pp. 2372-2374 ◽  
Author(s):  
K. Kurishima ◽  
H. Nakajima ◽  
T. Kobayashi ◽  
Y. Matsuoka ◽  
T. Ishibashi
Keyword(s):  
High Speed ◽  
Bipolar Transistors ◽  
Collector Current ◽  
Double Heterostructure ◽  
Current Blocking
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