Selective infill metalorganic molecular beam epitaxy of InP:Si n[sup +]/n[sup −] layers for buried collector double heterostructure bipolar transistors

1998 ◽  
Vol 16 (1) ◽  
pp. 210
Author(s):  
S. Schelhase
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Bipolar Transistors ◽  
Double Heterostructure ◽  
Metalorganic Molecular Beam Epitaxy

Growth of Heterojunction Bipolar Transistors by Metalorganic Molecular Beam Epitaxy

1993 ◽  
Vol 300 ◽  
Author(s):  
Cammy R. Abernathy
Keyword(s):  
Molecular Beam Epitaxy ◽  
Heterojunction Bipolar Transistors ◽  
High Performance ◽  
Molecular Beam ◽  
Bipolar Transistors ◽  
Lattice Matching ◽  
Background Impurity ◽  
Metalorganic Molecular Beam Epitaxy ◽  
P Type ◽  
Trimethylamine Alane

ABSTRACTHeterojunction bipolar transistors (HBTs) are becoming increasingly important for highspeed electronic applications. This paper will discuss how the unique growth chemistry of metalorganic molecular beam epitaxy (MOMBE) can be used to produce high performance HBTs. For example, it has been well documented that MOMBE's ability to grow heavily doped, well-confined layers of either n- or p-type is a significant advantage for this device. This feature arises primarily from the ability to use gaseous dopant sources in the absence of interfacial gas boundary layers. While this is an advantage for doping, it can be a disadvantage in other areas such as AlGaAs purity or InGaP lattice matching. This paper will discuss how these difficulties can be overcome through the use of novel Al or Ga precursors thus allowing deposition of high quality GaAs-based HBTs. By using trimethylamine alane (TMAA), background impurity concentrations can be reduced substantially. Further improvements in purity require cleaner Ga precursors or alternatively novel Ga substitutes. The resulting reduction in compensation allows for the use of lower dopant concentrations in the AlGaAs thus producing significant improvement in the leakage behavior of the base-emitter junction. Even further improvement can be achieved through the use of InGaP. Using novel Ga precursors, such as tri-isobutylgallium (TIBG), the problems associated with the sensitivity of composition to growth temperature are greatly reduced, allowing for the reproducible deposition of devices containing InGaP emitter layers.

Selective area growth of heterostructure bipolar transistors by metalorganic molecular beam epitaxy

1992 ◽  
Vol 61 (5) ◽  
pp. 592-594 ◽  
Author(s):  
R. A. Hamm ◽  
A. Feygenson ◽  
D. Ritter ◽  
Y. L. Wang ◽  
H. Temkin ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Bipolar Transistors ◽  
Selective Area Growth ◽  
Selective Area ◽  
Area Growth ◽  
Metalorganic Molecular Beam Epitaxy

Metalorganic Molecular Beam Epitaxy of GaAsP for Visible Light-Emitting Devices on Si

1998 ◽  
Vol 535 ◽  
Author(s):  
M. Yoshimoto ◽  
J. Saraie ◽  
T. Yasui ◽  
S. HA ◽  
H. Matsunami
Keyword(s):  
Molecular Beam Epitaxy ◽  
Visible Light ◽  
Buffer Layer ◽  
Molecular Beam ◽  
Infrared Light ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Good Crystallinity ◽  
Metalorganic Molecular Beam Epitaxy ◽  
Pre Treatment

AbstractGaAs1–xPx (0.2 <; x < 0.7) was grown by metalorganic molecular beam epitaxy with a GaP buffer layer on Si for visible light-emitting devices. Insertion of the GaP buffer layer resulted in bright photoluminescence of the GaAsP epilayer. Pre-treatment of the Si substrate to avoid SiC formation was also critical to obtain good crystallinity of GaAsP. Dislocation formation, microstructure and photoluminescence in GaAsP grown layer are described. A GaAsP pn junction fabricated on GaP emitted visible light (˜1.86 eV). An initial GaAsP pn diode fabricated on Si emitted infrared light.

Ultrahigh doping of GaAs by carbon during metalorganic molecular beam epitaxy

1989 ◽  
Vol 55 (17) ◽  
pp. 1750-1752 ◽  
Author(s):  
C. R. Abernathy ◽  
S. J. Pearton ◽  
R. Caruso ◽  
F. Ren ◽  
J. Kovalchik
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Metalorganic Molecular Beam Epitaxy

Plasma characteristics and the growth of group III-nitrides by metalorganic molecular beam epitaxy

1997 ◽  
Vol 26 (11) ◽  
pp. 1266-1269 ◽  
Author(s):  
J. D. Mackenzie ◽  
L. Abbaschian ◽  
C. R. Abernathy ◽  
S. M. Donovan ◽  
S. J. Pearton ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Group Iii Nitrides ◽  
Group Iii ◽  
Metalorganic Molecular Beam Epitaxy ◽  
Plasma Characteristics
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