High‐speed InP/InGaAs double‐heterostructure bipolar transistors with suppressed collector current blocking

1993 ◽  
Vol 62 (19) ◽  
pp. 2372-2374 ◽  
Author(s):  
K. Kurishima ◽  
H. Nakajima ◽  
T. Kobayashi ◽  
Y. Matsuoka ◽  
T. Ishibashi
Keyword(s):  
High Speed ◽  
Bipolar Transistors ◽  
Collector Current ◽  
Double Heterostructure ◽  
Current Blocking

Current blocking in InP/InGaAs double heterostructure bipolar transistors

1996 ◽  
Vol 79 (5) ◽  
pp. 2771-2778 ◽  
Author(s):  
W. R. McKinnon ◽  
S. P. McAlister ◽  
Z. Abid ◽  
E. E. Guzzo
Keyword(s):  
Bipolar Transistors ◽  
Double Heterostructure ◽  
Current Blocking

High-speed InGaAs(P)/InP double-heterostructure bipolar transistors

1987 ◽  
Vol 8 (6) ◽  
pp. 282-284 ◽  
Author(s):  
R.N. Nottenburg ◽  
J.-C. Bischoff ◽  
M.B. Panish ◽  
H. Temkin
Keyword(s):  
High Speed ◽  
Bipolar Transistors ◽  
Double Heterostructure

TEM study of phosphorus-implanted pseudomorphic Si0.88Ge0.12 on Si(100)

1995 ◽  
Vol 53 ◽  
pp. 468-469
Author(s):  
N. David Theodore ◽  
Donald Y.C Lie ◽  
J. H. Song ◽  
Peter Crozier
Keyword(s):  
Integrated Circuits ◽  
Heterojunction Bipolar Transistors ◽  
Integrated Circuit ◽  
High Speed ◽  
Room Temperature ◽  
Strain Relaxation ◽  
Bipolar Transistors ◽  
Sige Hbt ◽  
Integrated Circuit Manufacturing ◽  
Microstructural Behavior

SiGe is being extensively investigated for use in heterojunction bipolar-transistors (HBT) and high-speed integrated circuits. The material offers adjustable bandgaps, improved carrier mobilities over Si homostructures, and compatibility with Si-based integrated-circuit manufacturing. SiGe HBT performance can be improved by increasing the base-doping or by widening the base link-region by ion implantation. A problem that arises however is that implantation can enhance strain-relaxation of SiGe/Si.Furthermore, once misfit or threading dislocations result, the defects can give rise to recombination-generation in depletion regions of semiconductor devices. It is of relevance therefore to study the damage and anneal behavior of implanted SiGe layers. The present study investigates the microstructural behavior of phosphorus implanted pseudomorphic metastable Si0.88Ge0.12 films on silicon, exposed to various anneals.Metastable pseudomorphic Si0.88Ge0.12 films were grown ~265 nm thick on a silicon wafer by molecular-beam epitaxy. Pieces of this wafer were then implanted at room temperature with 100 keV phosphorus ions to a dose of 1.5×1015 cm-2.

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