Integral relations for determining non-quasi-static charge partitioning in bipolar devices from static charge distributions

1993 ◽  
Vol 40 (9) ◽  
pp. 1713-1716 ◽  
Author(s):  
J.S. Hamel
VLSI Design ◽  
1998 ◽  
Vol 8 (1-4) ◽  
pp. 475-480
Author(s):  
Michael S. Obrecht ◽  
Edwin L. Heasell ◽  
J. Vlach ◽  
Mohamed I. Elmasry

A new numerical method is applied to the analysis of the charge partitioning in the quasi-neutral base of a BJT. The results show that the conventional, 1:2 collector/ emitter partitioning is not valid in general. High level injection increases the collector fraction, whilst fast switching decreases it.


2000 ◽  
Author(s):  
G. Mainelis ◽  
K. Willeke ◽  
S. Grinshpun ◽  
T. Reponen ◽  
S. Trakumas ◽  
...  

Author(s):  
Hide Murayama ◽  
Makoto Yamazaki ◽  
Shigeru Nakajima

Abstract Power bipolar devices with gold metallization experience high failure rates. The failures are characterized as shorts, detected during LSI testing at burn-in. Many of these shorted locations are the same for the failed devices. From a statistical lot analysis, it is found that the short failure rate is higher for devices with thinner interlayer dielectric films. Based upon these results, a new electromigration and electrochemical reaction mixed failure mechanism is proposed for the failure.


2020 ◽  
Vol 17 (3) ◽  
pp. 224-233
Author(s):  
Xun Zhu ◽  
Chen Jian ◽  
Xiuqin Zhou ◽  
Abdullah M. Asiri ◽  
Khalid A. Alamry ◽  
...  

The pyrolysis of methyl alkyl esters I to III and dithioesters IV to VI were theoretically calculated. All possible pyrolysis paths were considered. Both esters and dithioesters presented three potential paths via six-, four- and five-membered ring transition states, respectively. The calculation processes were calculated using MP2/6-31G(d) set. In-depth theoretical analyses were also presented, including NBO related analyses, synchronicities, and charge distributions, to reveal the detailed pyrolysis process.


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