Energy transport numerical simulation of graded AlGaAs/GaAs heterojunction bipolar transistors

1989 ◽  
Vol 36 (4) ◽  
pp. 609-616 ◽  
Author(s):  
E.M. Azoff
Keyword(s):  
Numerical Simulation ◽  
Heterojunction Bipolar Transistors ◽  
Energy Transport ◽  
Bipolar Transistors

scholarly journals Study on Possible Double Peaks in Cutoff Frequency Characteristics of AlGaAs/GaAs HBTs by Energy Transport Simulation

VLSI Design ◽  
1998 ◽  
Vol 8 (1-4) ◽  
pp. 437-442
Author(s):  
T. Okada ◽  
K. Horio
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Energy Transport ◽  
Transport Model ◽  
Cutoff Frequency ◽  
Bipolar Transistors ◽  
Electron Velocity ◽  
Collector Current ◽  
Double Peak ◽  
Double Peaks ◽  
Energy Profiles

By using an energy transport model, we simulate cutoff frequency fT  versus collector current density IC characteristics of npn−n AlGaAs/GaAs heterojunction bipolar transistors (HBTs) with various n−-collector thickness and n−-doping densities. It is found that the calculated fT  characteristics show double peak behavior when the n−- layer is thick enough and the n−-doping is high enough to allow existence of neutral n−- region. The mechanism of the double peak behavior is discussed by studying energy band diagrams, electron-energy profiles and electron-velocity profiles. Particularly, we discuss the origin of the second peak (at higher IC) which is not usually reported experimentally.

Numerical simulation of GaAs/GaAlAs heterojunction bipolar transistors

1982 ◽  
Vol 3 (12) ◽  
pp. 403-406 ◽  
Author(s):  
P.M. Asbeck ◽  
D.L. Miller ◽  
R. Asatourian ◽  
C.G. Kirkpatrick
Keyword(s):  
Numerical Simulation ◽  
Heterojunction Bipolar Transistors ◽  
Bipolar Transistors
Sign in / Sign up

Export Citation Format

Share Document