Migration-enhanced epitaxial growth of GaAs on Si using (GaAs)1−x(Si2)x/GaAs strained-layer superlattice buffer layers

1993 ◽  
Vol 11 (3) ◽  
pp. 820 ◽  
Author(s):  
T. Sudersena Rao
Keyword(s):  
Epitaxial Growth ◽  
Buffer Layers ◽  
Strained Layer ◽  
Gaas On Si ◽  
Strained Layer Superlattice

Defect Reduction in GaAs Epilayers on Si Substrates Using Strained Layer Superlattices

1987 ◽  
Vol 91 ◽  
Author(s):  
N. El-Masry ◽  
N. Hamaguchi ◽  
J.C.L. Tarn ◽  
N. Karam ◽  
T.P. Humphreys ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Buffer Layers ◽  
Threading Dislocations ◽  
Defect Reduction ◽  
Strained Layer ◽  
Si Substrates ◽  
Density Of Dislocations ◽  
Strained Layer Superlattice ◽  
Strained Layer Superlattices

ABSTRACTInxGa11-xAs-GaAsl-yPy strained layer superlattice buffer layers have been used to reduce threading dislocations in GaAs grown on Si substrates. However, for an initially high density of dislocations, the strained layer superlattice is not an effective filtering system. Consequently, the emergence of dislocations from the SLS propagate upwards into the GaAs epilayer. However, by employing thermal annealing or rapid thermal annealing, the number of dislocation impinging on the SLS can be significantly reduced. Indeed, this treatment greatly enhances the efficiency and usefulness of the SLS in reducing the number of threading dislocations.

Structural properties of GaAs-on-Si with InGaAs/GaAs strained-layer superlattice

1988 ◽  
Vol 93 (1-4) ◽  
pp. 459-465 ◽  
Author(s):  
Yoshio Watanabe ◽  
Yoshiaki Kadota ◽  
Hiroshi Okamoto ◽  
Masahiro Seki ◽  
Yoshiro Ohmachi
Keyword(s):  
Structural Properties ◽  
Strained Layer ◽  
Gaas On Si ◽  
Strained Layer Superlattice

Defect studies in strained-layer quantum well heterostructures

1983 ◽  
Vol 41 ◽  
pp. 120-121
Author(s):  
J.M. Brown ◽  
M.E. Mochel ◽  
N. Holonyak ◽  
M.D. Camras ◽  
M.J. Ludowise ◽  
...  
Keyword(s):  
Electron Microscope ◽  
Epitaxial Growth ◽  
Vapor Phase ◽  
Microscope Study ◽  
Electron Microscope Study ◽  
Stimulated Emission ◽  
High Excitation ◽  
Strained Layer ◽  
Strained Layer Superlattice ◽  
Strained Layer Superlattices

The epitaxial growth of mismatched or strained III-V layers was shown to be viable as early as 1960. Osbourn et al suggested that strained layer GaP-GaAs1-xPx superlattices grown by organo-metal1ic vapor phase epitaxy (OMVPE) could be used to fold the Brillouin zone and make indirect-crystal direct. More recently, it has been shown that a strained-layer superlattice can be grown free enough of defects at heterointerfaces to make possible stimulated emission. This has been demonstrated on OMVPE GaAs1-xPx-GaAs (x=0.25) and GaAs-InxGa1-xAs (x=0.2) strained layer superlattices which have been operatedas photopuraped continuous (cw) 300K lasers but which at high excitation levels (> 103Acm-2) prove to be unstable. This paper presents the results of an electron microscope study of the defects produced in a GaAs-InxGa1-xAs strained superlattice as a result of high excitation levels of operation.

High Quality GaAs on Si and its Application to a Solar Cell

1988 ◽  
Vol 144 ◽  
Author(s):  
Yoshiro Ohmachi ◽  
Yoshiaki Kadota ◽  
Yoshio Watanabe ◽  
Hiroshi Okamoto
Keyword(s):  
Solar Cell ◽  
Critical Thickness ◽  
High Quality ◽  
Strained Layer ◽  
Cyclic Annealing ◽  
Si Substrates ◽  
Gaas On Si ◽  
Strained Layer Superlattice ◽  
Buffer Structure

ABSTRACTEpitaxial growth using thermal annealing and a strained layer superlattice is studied to obtain high-quality GaAs device layers on Si substrates. Crystalline quality of GaAs-on-Si is found to improve with thermal cyclic annealing at temperatures higher than the growth temperature and cooling down to 300°C. It is also found that the optimum InGaAs/GaAs strained layer superlattice buffer structure is one whose total thickness is several times the calculated critical thickness for the average In-mole fraction of the SLS buffer. Configurations and structures of dislocation reductions are ex-amined by TEM observations. A GaAs solar cell is successfully constructed and is found to show total area efficiencies of 18.3% under AM 0 and 20.0% under AM 1.5 conditions.

Growth of (GaAs)1−x (Si2)x Metastable Alloys using Migration-Enhanced Epitaxy

1991 ◽  
Vol 222 ◽  
Author(s):  
T. Sudersena Rao ◽  
Y. Horikoshi
Keyword(s):  
Buffer Layers ◽  
Double Crystal ◽  
Cross Sectional ◽  
Strained Layer ◽  
Si Substrates ◽  
Migration Enhanced Epitaxy ◽  
Strained Layer Superlattice ◽  
Metastable Alloys ◽  
Si Content ◽  
Strained Layer Superlattices

ABSTRACTEpitaxial (GaAs)1−x (Si2)x metastable alloys have been grown on GaAs (100) substrates using Migration-Enhanced Epitaxy in the composition range of 0<x<0.25. The lattice constant a0 of the alloys was found to decrease with increasing Si content from 0.56543nm at x=0 to 0.5601nm at x=0.25. Double-crystal x-ray diffraction rocking curve measurements and cross-sectional transmission electron microscopy studies made on a 10 period (GaAs)1−x(Si2)x/GaAs strained layer superlattice indicated sharp and abrupt interfaces. High crystalline quality GaAs has been grown on Si substrates using (GaAs)0.80(Si2)0.20/GaAs strained layer superlattices as buffer layers.

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