Reduction of oxide charge and interface-trap density in MOS capacitors with ITO gates

1992 ◽  
Vol 39 (8) ◽  
pp. 1889-1894 ◽  
Author(s):  
C.H.L. Weijtens
Keyword(s):  
Trap Density ◽  
Interface Trap Density ◽  
Interface Trap ◽  
Mos Capacitors ◽  
Oxide Charge

Dependence of the Dielectric Properties of Pt/ZrO2/Si Capacitors Prepared by RF-Magnetron Sputtering on the Oxygen Partial Pressure and the Annealing Temperature

2007 ◽  
Vol 544-545 ◽  
pp. 937-940
Author(s):  
Chong Mu Lee ◽  
Anna Park ◽  
Su Young Park ◽  
Min Woo Park
Keyword(s):  
Magnetron Sputtering ◽  
Annealing Temperature ◽  
Rf Magnetron Sputtering ◽  
Optimum Process ◽  
Interface Trap Density ◽  
Interface Trap ◽  
Flow Ratio ◽  
Mos Capacitors ◽  
Oxide Charge ◽  
Zro2 Film

Effects of the O2/Ar flow ratio in the reactive sputtering process and the annealing temperature on the structure and surface roughness of ZrO2 films and the electric properties of Pt/ZrO2/Si MOS capacitors in which the ZrO2 film was deposited by magnetron sputtering have been investigated. The optimum process parameters of the Pt/ZrO2/Si capacitor based on reactively sputtered- ZrO2 determined in such a way as the capacitance is maximized and the leakage current, the oxide charge, and the interface trap density are minimized is the O2/Ar flow ratio of 1.5 and the annealing temperature of 800°C

Effect of NH3 Post-Oxidation Annealing on Flatness of SiO2/SiC Interface

2013 ◽  
Vol 740-742 ◽  
pp. 723-726 ◽  
Author(s):  
Narumasa Soejima ◽  
Taishi Kimura ◽  
Tsuyoshi Ishikawa ◽  
Takahide Sugiyama
Keyword(s):  
Nitrous Oxide ◽  
Field Effect ◽  
Inversion Layer ◽  
Trap Density ◽  
Interface Trap Density ◽  
Interface Trap ◽  
Field Effect Mobility ◽  
Interfacial Roughness ◽  
Cross Sectional ◽  
Mos Capacitors

We investigated the effects of the post-oxidation annealing (POA) atmosphere on the electrical properties and interfacial roughness of SiO2 deposited on a 4H-SiC (0001) face and SiC. POA in ammonia (NH3) gave MOS capacitors with a lower interface trap density and n-channel MOSFETs with higher field-effect mobility than POA in nitrous oxide (N2O) or nitrogen (N2). In contrast, POA in N2O gave a lower interface trap density than POA in N2, but it gave the lowest field-effect mobility of all the samples. Cross-sectional TEM observations revealed that N2O POA gave a higher interfacial roughness than NH3 POA. We thus considered that N2O POA degraded the inversion-layer mobility due to increased roughness scattering.

Stable Phosphorus Passivated SiO2/4H-SiC Interface Using Thin Oxides

2014 ◽  
Vol 806 ◽  
pp. 139-142 ◽  
Author(s):  
Yogesh K. Sharma ◽  
A.C. Ahyi ◽  
Tamara Issacs-Smith ◽  
M.R. Jennings ◽  
S.M. Thomas ◽  
...  
Keyword(s):  
Metal Oxide Semiconductor ◽  
Trap Density ◽  
Oxide Semiconductor ◽  
Interface Trap Density ◽  
Interface Trap ◽  
Polar Material ◽  
Mos Capacitors ◽  
Channel Mobility ◽  
Inversion Channel ◽  
Phosphosilicate Glass

The NO (nitric oxide) passivation process for 4H-SiC MOSFETs (silicon carbide metal-oxide-semiconductor filed effect transistors) effectively reduces the interface trap density and increases the inversion channel mobility from less that 10 to around 35cm2/V.s, only 5% of the bulk mobility. Recent results on the phosphorous passivation of the SiO2/4H-SiC interface have shown that it improves the mobility to about 90 cm2/V.s. Phosphorous passivation converts oxide (SiO2) into phosphosilicate glass (PSG) which is a polar material and results in device instabilities under abias-temperature stress (BTS) measurements. To limit the polarization effect, a new thin PSG process has been developed. The interface trap density of 4H-SiC-MOS capacitors using this process is as low as 3x1011cm-2eV-1. BTS results on MOSFETs have shown that the thin PSG devices are as stable as NO passivated devices with mobility around 80 cm2/V.s.

Effects of Post-Deposition Annealing on CeO2 Gate Prepared by Metal-Organic Decomposition (MOD) Method on 4H-SiC

2010 ◽  
Vol 645-648 ◽  
pp. 837-840 ◽  
Author(s):  
Way Foong Lim ◽  
Kuan Yew Cheong ◽  
Zainovia Lockman ◽  
Farah Ainis Jasni ◽  
Hock Jin Quah
Keyword(s):  
Trap Density ◽  
Interface Trap Density ◽  
Interface Trap ◽  
Post Deposition Annealing ◽  
Oxide Charge ◽  
Ceo2 Film ◽  
Metal Organic ◽  
Effective Oxide Charge ◽  
Post Deposition ◽  
Organic Decomposition

Electrical properties of MOD-derived CeO2 film deposited on n-type 4H-SiC have been investigated. Post-deposition annealing of the oxide was performed in argon ambient for 15 minutes at 600, 800, and 1000°C in order to optimize the oxide properties. Spin-on coating was then used to deposit the annealed oxide onto the substrate. Results indicated that the effective oxide charge and slow trap density increased as temperature increased. Negative effective oxide charges were revealed in all annealed oxides. The lowest leakage current and interface trap density was obtained in the sample annealed in the highest temperature.

The Impact of Oxygen Flow Rate on the Oxide Thickness and Interface Trap Density in 4H-SiC MOS Capacitors

2014 ◽  
Vol 806 ◽  
pp. 149-152
Author(s):  
Stephen M. Thomas ◽  
M.R. Jennings ◽  
Y.K. Sharma ◽  
C.A. Fisher ◽  
P.A. Mawby
Keyword(s):  
Flow Rate ◽  
Oxide Thickness ◽  
Trap Density ◽  
Oxygen Flow ◽  
Interface Trap Density ◽  
Interface Trap ◽  
Mos Transistors ◽  
Mos Capacitors ◽  
Channel Mobility ◽  
The Impact

Silicon carbide based devices have the potential to surpass silicon technology in high power, high frequency and high temperature applications. 4H-SiC MOS transistors currently suffer from a low channel mobility due to a high density of traps near the oxide/SiC interface. In this work, oxides have been grown on the Si face of 4H-SiC using oxygen flow rates ranging from 2.5 l/min to 0.05 l/min. Capacitance-voltage measurements on MOS capacitors revealed approximately a fourfold reduction in the interface trap density and a 25% increase in oxide thickness by reducing the flow rate from 2.5 l/min to 0.05 l/min.

Investigation of gate edge effect on interface trap density in 3C–SiC MOS capacitors

2012 ◽  
Vol 177 (15) ◽  
pp. 1327-1330 ◽  
Author(s):  
T. Gutt ◽  
T. Małachowski ◽  
H.M. Przewłocki ◽  
O. Engström ◽  
M. Bakowski ◽  
...  
Keyword(s):  
Edge Effect ◽  
Trap Density ◽  
Interface Trap Density ◽  
Interface Trap ◽  
Mos Capacitors ◽  
Gate Edge
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