A semi-empirical model of surface scattering for Monte Carlo simulation of silicon n-MOSFETs

1992 ◽  
Vol 39 (2) ◽  
pp. 356-361 ◽  
Author(s):  
E. Sangiorgi ◽  
M.R. Pinto
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Empirical Model ◽  
Surface Scattering ◽  
Semi Empirical

A semi‐empirical model for predicting surface scattering strengths

2005 ◽  
Vol 117 (4) ◽  
pp. 2434-2434
Author(s):  
Roger C. Gauss ◽  
Joseph M. Fialkowski ◽  
Daniel Wurmser
Keyword(s):  
Empirical Model ◽  
Surface Scattering ◽  
Semi Empirical

Atomic Diffusion With Strain and Injection

1990 ◽  
Vol 184 ◽  
Author(s):  
J. A. Van Vechten
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Strong Field ◽  
Misfit Strain ◽  
Atomic Diffusion ◽  
Potential Solution ◽  
Empirical Methods ◽  
Semi Empirical ◽  
Very High ◽  
Recombination Effect

ABSTRACTThe inherent complexity of defect processes in III-V's and the consequent difficulties with ab initio and semi-empirical methods are recalled. A potential solution using massive Monte Carlo simulation on microcomputers is suggested. Evidence for the validity of the Ballistic Model, BM, of atomic diffusion in III-V's is noted. According to the BM the effect of strain (in the absence of any electrostatic, population, or recombination effect) is to increase the rate at which a given mobile atom hops where the sample is compressed. For the case of misfit strain at a (100) junction, we note that the anisotropy of the elastic constants implies that some planes running into the bulk will be compressed whichever the sign of the misfit. This implies that misfit strain of either sign should increase the observed rate of interdiffusion, in the absence of other effects. We also recall the importance (demonstrated at low T) of recombination enhancement of atomic diffusion, RED. Devices are processed at temperatures where the thermal rate of recombination is very high and often operated at high levels of injection. The interaction of strain with RED is clearly important and complicated. III-V crystals have the further complication of being piezoelectric. The active piezoelectric axes are <111>, so a pure <100> strain does not produce a field. However, the accommodation a device makes to misfit at (100) junctions can generate a strong field, which may fluctuate with bias voltage.

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