A semiempirical surface scattering model for quantum corrected Monte-Carlo simulation of unstrained Si and strained Si/SiGe PMOSFETs

2006 ◽  
Vol 135 (3) ◽  
pp. 224-227 ◽  
Author(s):  
A.T. Pham ◽  
C. Jungemann ◽  
C.D. Nguyen ◽  
B. Meinerzhagen
1978 ◽  
Vol 31 (4) ◽  
pp. 299 ◽  
Author(s):  
HA Blevin ◽  
J Fletcher ◽  
SR Hunter

Hunter (1977) found that a Monte-Carlo simulation of electron swarms in hydrogen, based on an isotropic scattering model, produced discrepancies between the predicted and measured electron transport parameters. The present paper shows that, with an anisotropic scattering model, good agreement is obtained between the predicted and experimental data. The simulation code is used here to calculate various parameters which are not directly measurable.


2005 ◽  
Vol 52 ◽  
pp. 153-171 ◽  
Author(s):  
Li-Fang Wang ◽  
Jin Au Kong ◽  
K. H. Ding ◽  
T. Le Toan ◽  
F. Ribbes ◽  
...  

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