Novel GaAs/AlGaAs multiquantum-well Schottky-junction device and its photovoltaic LWIR detection

1992 ◽  
Vol 39 (2) ◽  
pp. 234-241 ◽  
Author(s):  
C.S. Wu ◽  
C.P. Wen ◽  
R.N. Sato ◽  
M. Hu ◽  
C.W. Tu ◽  
...  
Keyword(s):  
Schottky Junction ◽  
Junction Device ◽  
Multiquantum Well

Tunable Schottky barrier height of Pt-CuO junction via triboelectric nanogenerator

Nanoscale ◽  
2021 ◽  
Author(s):  
Jian ping Meng ◽  
Qi Li ◽  
Jing Huang ◽  
Zhou Li
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Barrier Height ◽  
Schottky Junction ◽  
Triboelectric Nanogenerator ◽  
Junction Device

Tuning Schottky barrier height is crucial to optimize the performance of Schottky junction device. Here, we demonstrate that the Schottky barrier height can be tuned by the voltage from triboelectric...

Material Study of Co2CrAl Heusler Alloy Magnetic Thin Film and Co2CrAl/n-Si Schottky Junction Device

2020 ◽  
Vol 49 (6) ◽  
pp. 3652-3658
Author(s):  
Rashmi Singh ◽  
Faizan Ahmad ◽  
Kashif Nazeer ◽  
Rachana Kumar ◽  
Naresh Kumar ◽  
...  
Keyword(s):  
Thin Film ◽  
Heusler Alloy ◽  
Schottky Junction ◽  
Magnetic Thin Film ◽  
Junction Device ◽  
Material Study

Stable electroluminescence from reverse biased n‐type porous silicon–aluminum Schottky junction device

1996 ◽  
Vol 68 (12) ◽  
pp. 1646-1648 ◽  
Author(s):  
S. Lazarouk ◽  
P. Jaguiro ◽  
S. Katsouba ◽  
G. Masini ◽  
S. La Monica ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Schottky Junction ◽  
Junction Device

Stable electroluminescence from reverse biased n‐type porous silicon–aluminum Schottky junction device

1996 ◽  
Vol 68 (15) ◽  
pp. 2108-2110 ◽  
Author(s):  
S. Lazarouk ◽  
P. Jaguiro ◽  
S. Katsouba ◽  
G. Masini ◽  
S. La Monica ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Schottky Junction ◽  
Junction Device

scholarly journals High-performance near-infrared photodetectors based on gate-controlled graphene–germanium Schottky junction with split active junction

Nanophotonics ◽  
2022 ◽  
Vol 0 (0) ◽  
Author(s):  
Cihyun Kim ◽  
Tae Jin Yoo ◽  
Min Gyu Kwon ◽  
Kyoung Eun Chang ◽  
Hyeon Jun Hwang ◽  
...  
Keyword(s):  
Dark Current ◽  
Interfacial Layer ◽  
High Performance ◽  
Near Infrared ◽  
Infrared Detection ◽  
Schottky Junction ◽  
Internal Electric Field ◽  
Detection Capability ◽  
Junction Device ◽  
Highly Sensitive

Abstract The structure of a gate-controlled graphene/germanium hybrid photodetector was optimized by splitting the active region to achieve highly sensitive infrared detection capability. The strengthened internal electric field in the split active junctions enabled efficient collection of photocarriers, resulting in a responsivity of 2.02 A W−1 and a specific detectivity of 5.28 × 1010 Jones with reduced dark current and improved external quantum efficiency; these results are more than doubled compared with the responsivity of 0.85 A W−1 and detectivity of 1.69 × 1010 Jones for a single active junction device. The responsivity of the optimized structure is 1.7, 2.7, and 39 times higher than that of previously reported graphene/Ge with Al2O3 interfacial layer, gate-controlled graphene/Ge, and simple graphene/Ge heterostructure photodetectors, respectively.

Electrical Characteristics of Au/n-GaN Schottky Junction with a High-k SrTiO3 Insulating Layer

2019 ◽  
Vol 11 (4) ◽  
pp. 04005-1-04005-5 ◽  
Author(s):  
Varra Reddy ◽  
◽  
D. V. Vivekananda ◽  
G. Sai Krishna ◽  
B. Sri Vivek ◽  
...  
Keyword(s):  
Schottky Junction ◽  
Electrical Characteristics ◽  
Insulating Layer ◽  
High K

InGaAsP/InP multiquantum-well structure grown by MOCVD

1985 ◽  
Vol 21 (4) ◽  
pp. 164 ◽  
Author(s):  
M. Morisaki ◽  
M. Ogura ◽  
N. Hase ◽  
T. Kajiwara
Keyword(s):  
Multiquantum Well
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