Stable electroluminescence from reverse biased n‐type porous silicon–aluminum Schottky junction device

1996 ◽  
Vol 68 (12) ◽  
pp. 1646-1648 ◽  
Author(s):  
S. Lazarouk ◽  
P. Jaguiro ◽  
S. Katsouba ◽  
G. Masini ◽  
S. La Monica ◽  
...  
1996 ◽  
Vol 68 (15) ◽  
pp. 2108-2110 ◽  
Author(s):  
S. Lazarouk ◽  
P. Jaguiro ◽  
S. Katsouba ◽  
G. Masini ◽  
S. La Monica ◽  
...  

1999 ◽  
Vol 74 (14) ◽  
pp. 1960-1962 ◽  
Author(s):  
M. Balucani ◽  
V. Bondarenko ◽  
L. Franchina ◽  
G. Lamedica ◽  
V. A. Yakovtseva ◽  
...  

Nanoscale ◽  
2021 ◽  
Author(s):  
Jian ping Meng ◽  
Qi Li ◽  
Jing Huang ◽  
Zhou Li

Tuning Schottky barrier height is crucial to optimize the performance of Schottky junction device. Here, we demonstrate that the Schottky barrier height can be tuned by the voltage from triboelectric...


2017 ◽  
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Eunkyung Park ◽  
Jungwoo Lee ◽  
Taehee Park ◽  
Jongtaek Lee ◽  
Donghwan Lee ◽  
...  

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Vol 49 (6) ◽  
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Rashmi Singh ◽  
Faizan Ahmad ◽  
Kashif Nazeer ◽  
Rachana Kumar ◽  
Naresh Kumar ◽  
...  

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Vol 715 ◽  
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Author(s):  
Dong Hee Shin ◽  
Ju Hwan Kim ◽  
Jung Hyun Kim ◽  
Chan Wook Jang ◽  
Sang Woo Seo ◽  
...  

1992 ◽  
Vol 39 (2) ◽  
pp. 234-241 ◽  
Author(s):  
C.S. Wu ◽  
C.P. Wen ◽  
R.N. Sato ◽  
M. Hu ◽  
C.W. Tu ◽  
...  

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