Electronic Properties and Device Applications of III-V Compound Semiconductor Native Oxides

2006 ◽  
Author(s):  
Douglas C. Hall ◽  
Patrick J. Fay ◽  
Thomas H. Kosel ◽  
Bruce A. Bunker ◽  
Russell D. Dupuis
Keyword(s):  
Electronic Properties ◽  
Compound Semiconductor ◽  
Native Oxides ◽  
Device Applications

Microstructure and Size Distribution of Compound Semiconductor Nanocrystals Synthesized by Ion Implantation

1998 ◽  
Vol 536 ◽  
Author(s):  
A. Meldrum ◽  
S. P. Withrow ◽  
R. A. Zuhr ◽  
C. W. White ◽  
L. A. Boatnerl ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Semiconductor Nanocrystals ◽  
Compound Semiconductor ◽  
Fused Silica ◽  
Silica Matrix ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Host Materials ◽  
Device Applications ◽  
Versatile Technique

AbstractIon implantation is a versatile technique by which compound semiconductor nanocrystals may be synthesized in a wide variety of host materials. The component elements that form the compound of interest are implanted sequentially into the host, and nanocrystalline precipitates then form during thermal annealing. Using this technique, we have synthesized compound semiconductor nanocrystal precipitates of ZnS, CdS, PbS, and CdSe in a fused silica matrix. The resulting microstructures and size distributions were investigated by cross-sectional transmission electron microscopy. Several unusual microstructures were observed, including a band of relatively large nanocrystals at the end of the implant profile for ZnS and CdSe, polycrystalline agglomerates of a new phase such as γ-Zn 2SiO4, and the formation of central voids inside CdS nanocrystals. While each of these microstructures is of fundamental interest, such structures are generally not desirable for potential device applications for which a uniform, monodispersed array of nanocrystals is required. Methods were investigated by which these unusual microstructures could be eliminated.

Electrical Characteristics of Fluorine Passivated MOCVD-TiO2 Film on (NH4)2Sx Treated GaAs

2008 ◽  
Vol 368-372 ◽  
pp. 232-234
Author(s):  
Ming Kwei Lee ◽  
Chih Feng Yen ◽  
Tsung Hsiang Shih ◽  
Chen Lia Ho ◽  
Hung Chang Lee ◽  
...  
Keyword(s):  
Leakage Current ◽  
Electric Fields ◽  
Energy Gap ◽  
Compound Semiconductor ◽  
Tio2 Films ◽  
Electrical Characteristics ◽  
Liquid Phase Deposition ◽  
Native Oxides ◽  
P Type ◽  
Surface Fermi Level

The high Dit is the major problem of III-V compound semiconductor MOSFET, which causes the pinning of the surface Fermi level near the middle of the energy gap. The GaAs with (NH4)2Sx treatment (S-GaAs) can remove the native oxides on GaAs and prevent it from oxidizing. The electrical characteristics of fluorinated polycrystalline TiO2 films deposited on p-type(100) S-GaAs were investigated. The fluorine from liquid phase deposition solution can passivate the grain boundary of polycrystalline TiO2 prepared by MOCVD. The leakage current through the grain boundaries was suppressed. The leakage current of MOCVD-TiO2/S-GaAs can be improved from 6.8 x 10-6 and 0.2 A/cm2 to 3.41 x 10-7 and 1.13 x 10-6A/cm2 under positive and negative electric fields at 1.5 MV/cm, respectively. Dit and k can be improved from 1.44 x 1012 cm-2eV-1 to 4.6 x 1011 cm-2eV-1 and 52 to 65, respectively. The effective oxide charges can be improved from 2.5 x 1012 C/cm-2 to 9.3 x 1011 C/cm-2.

scholarly journals Probing Electronic Properties of Graphene on the Atomic Scale by Scanning Tunneling Microscopy and Spectroscopy

2014 ◽  
Vol 1 (1) ◽  
Author(s):  
Li Gao
Keyword(s):  
Silicon Carbide ◽  
Boron Nitride ◽  
Silicon Dioxide ◽  
Scanning Tunneling Microscopy ◽  
Electronic Properties ◽  
Crucial Role ◽  
Atomic Scale ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Device Applications

AbstractAtomic scale investigations of the electronic properties of graphene are playing a crucial role in understanding and tuning the exotic properties of this material for its potential device applications. Scanning tunneling microscopy (STM) and spectroscopy (STS) are unique techniques for atomic scale investigations and have been extensively used in graphene research. In this article, we review recent progresses in STM and STS studies of the electronic properties of suspended graphene as well as graphene supported by different substrates including graphite, metals, silicon carbide, silicon dioxide and boron nitride.

Nonlinear optical and electronic properties of SiC/PMMA/Ge/Fe waveguide for device applications

2007 ◽  
Author(s):  
Abdalla Darwish ◽  
Brent Koplitz ◽  
Nickolai Kukhtarev ◽  
Xiaodong Zhang ◽  
Robet Combs ◽  
...  
Keyword(s):  
Electronic Properties ◽  
Nonlinear Optical ◽  
Optical And Electronic Properties ◽  
Device Applications

Correlation between Atomic-Scale Structures and Electronic Properties at Compound Semiconductor Layered Interfaces

1987 ◽  
Author(s):  
Hideki HASEGAWA ◽  
Hideo OHNO ◽  
Tetsuya HAGA ◽  
Yutaka ABE ◽  
Heishichirou TAKAHASHI ◽  
...  
Keyword(s):  
Electronic Properties ◽  
Compound Semiconductor ◽  
Atomic Scale ◽  
Scale Structures ◽  
Layered Interfaces
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