Electron Dynamics of Silicon Surface States: Second-Harmonic Hole Burning onSi(111)−(7×7)

2006 ◽  
Vol 96 (8) ◽  
Author(s):  
John A. McGuire ◽  
Markus B. Raschke ◽  
Y. Ron Shen
Keyword(s):  
Silicon Surface ◽  
Second Harmonic ◽  
Surface States ◽  
Hole Burning ◽  
Electron Dynamics

Silicon Surface Preparation and Passivation by Vapor Phase of Heavy Water

2009 ◽  
Vol 145-146 ◽  
pp. 181-184 ◽  
Author(s):  
Andrea E. Pap ◽  
Zsolt Nényei ◽  
Gábor Battistig ◽  
István Bársony
Keyword(s):  
Silicon Surface ◽  
Surface States ◽  
Surface Preparation ◽  
Hydrogen Desorption ◽  
Dangling Bonds ◽  
Hydrogen Atoms ◽  
Surface Band ◽  
Band Bending ◽  
Chemical Treatments ◽  
Wet Chemical

The well known wet chemical treatments of the silicon surface and its native oxidation in air cause a high density of interface states, which predominantly originate from dangling bonds strained bonds or from bonds, between adsorbates and silicon surface atoms. Therefore, a number of wet-chemical treatments have been developed for ultraclean processing in order to produce chemically and electronically passivated surfaces [1]. The saturation of dangling bonds by hydrogen removes the surface states and replaces them by adsorbate-induced states, which influence the surface band-bending [2]. The first thermal hydrogen desorption peak from a hydrogen passivated Si surface in vacuum or inert gas ambient can be detected at around 380°C [3,4]. Simultaneously the combination of the hydrogen atoms of neighboring dihydrides generates a pair of dangling bonds. At around 480-500°C dangling bonds are generated on the silicon surface by desorption of the remaining hydrogen [5]. At that moment the silicon surface becomes extremely reactive.

scholarly journals Design of a Pre-Bunched THz Free Electron Laser

Particles ◽  
2018 ◽  
Vol 1 (1) ◽  
pp. 267-278 ◽  
Author(s):  
Ruixuan Huang ◽  
Weiwei Li ◽  
Zhouyu Zhao ◽  
Heting Li ◽  
Jigang Wang ◽  
...  
Keyword(s):  
Free Electron ◽  
Free Electron Laser ◽  
Peak Power ◽  
Tuning Range ◽  
Second Harmonic ◽  
Industrial Applications ◽  
Thz Radiation ◽  
Fundamental Wave ◽  
Electron Dynamics ◽  
Main Components

Terahertz (THz) radiation has attracted much attention in new scientific and industrial applications. There has been significant recent progress in generating THz with accelerators. To investigate the collective behavior of electron dynamics, we have proposed a new high throughput material characterization system, which supplies a multiple light source. The system includes a pre-bunched THz free electron laser (FEL), which is a high-power narrow-band THz source with a wide tuning range of frequency. The physical design with the main components of the facility is introduced, and the simulation results are illustrated. Radiation of 0.5–3.0 THz is obtained by the fundamental wave of the pre-bunched beam, and radiation covering 3.0–5.0 THz is realized by second harmonic generation. As the simulation shows, intense THz radiation could be achieved in a frequency from 0.5–5.0 THz, with a peak power of several megawatts (MWs) and a bandwidth of a few percent.

Angular distribution of photoelectrons from (111) silicon surface states

1975 ◽  
Vol 12 (1) ◽  
pp. 298-300 ◽  
Author(s):  
M. M. Traum ◽  
J. E. Rowe ◽  
N. V. Smith
Keyword(s):  
Angular Distribution ◽  
Silicon Surface ◽  
Surface States

Ultrafast electron dynamics on the silicon surface excited by an intense femtosecond laser pulse

JETP Letters ◽  
2012 ◽  
Vol 96 (6) ◽  
pp. 375-379 ◽  
Author(s):  
A. A. Ionin ◽  
S. I. Kudryashov ◽  
S. V. Makarov ◽  
P. N. Saltuganov ◽  
L. V. Seleznev ◽  
...  
Keyword(s):  
Laser Pulse ◽  
Femtosecond Laser ◽  
Femtosecond Laser Pulse ◽  
Silicon Surface ◽  
Electron Dynamics ◽  
Ultrafast Electron Dynamics
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