Angular distribution of photoelectrons from (111) silicon surface states

1975 ◽  
Vol 12 (1) ◽  
pp. 298-300 ◽  
Author(s):  
M. M. Traum ◽  
J. E. Rowe ◽  
N. V. Smith
2009 ◽  
Vol 145-146 ◽  
pp. 181-184 ◽  
Author(s):  
Andrea E. Pap ◽  
Zsolt Nényei ◽  
Gábor Battistig ◽  
István Bársony

The well known wet chemical treatments of the silicon surface and its native oxidation in air cause a high density of interface states, which predominantly originate from dangling bonds strained bonds or from bonds, between adsorbates and silicon surface atoms. Therefore, a number of wet-chemical treatments have been developed for ultraclean processing in order to produce chemically and electronically passivated surfaces [1]. The saturation of dangling bonds by hydrogen removes the surface states and replaces them by adsorbate-induced states, which influence the surface band-bending [2]. The first thermal hydrogen desorption peak from a hydrogen passivated Si surface in vacuum or inert gas ambient can be detected at around 380°C [3,4]. Simultaneously the combination of the hydrogen atoms of neighboring dihydrides generates a pair of dangling bonds. At around 480-500°C dangling bonds are generated on the silicon surface by desorption of the remaining hydrogen [5]. At that moment the silicon surface becomes extremely reactive.


2001 ◽  
Vol 398-399 ◽  
pp. 480-484 ◽  
Author(s):  
S.W. Whangbo ◽  
Y.K. Choi ◽  
W.S. Koh ◽  
K.B. Chung ◽  
H.K. Jang ◽  
...  

1998 ◽  
Vol 444 (1) ◽  
pp. 55-60 ◽  
Author(s):  
A Belaïdi ◽  
J.-N Chazalviel ◽  
F Ozanam ◽  
O Gorochov ◽  
A Chari ◽  
...  

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