scholarly journals Tunneling Anisotropic Magnetoresistance: A Spin-Valve-Like Tunnel Magnetoresistance Using a Single Magnetic Layer

2004 ◽  
Vol 93 (11) ◽  
Author(s):  
C. Gould ◽  
C. Rüster ◽  
T. Jungwirth ◽  
E. Girgis ◽  
G. M. Schott ◽  
...  
Keyword(s):  
Spin Valve ◽  
Magnetic Layer ◽  
Anisotropic Magnetoresistance ◽  
Tunnel Magnetoresistance

scholarly journals Exceeding 400% tunnel magnetoresistance at room temperature in epitaxial Fe/MgO/Fe(001) spin-valve-type magnetic tunnel junctions

2021 ◽  
Vol 118 (4) ◽  
pp. 042411
Author(s):  
Thomas Scheike ◽  
Qingyi Xiang ◽  
Zhenchao Wen ◽  
Hiroaki Sukegawa ◽  
Tadakatsu Ohkubo ◽  
...  
Keyword(s):  
Room Temperature ◽  
Tunnel Junctions ◽  
Spin Valve ◽  
Magnetic Tunnel Junctions ◽  
Tunnel Magnetoresistance

Bias Voltage Dependence of Tunnel Magnetoresistance Effect in Spin-Valve Type MnIr/NiFe/Co90Fe10/SrTiO3/La0.7Sr0.3MnO3Tunnel Junctions

2002 ◽  
Vol 41 (Part 1, No. 3A) ◽  
pp. 1340-1342 ◽  
Author(s):  
Jun Hayakawa ◽  
Satoshi Kokado ◽  
Kenchi Ito ◽  
Mikito Sugiyama ◽  
Hidefumi Asano ◽  
...  
Keyword(s):  
Bias Voltage ◽  
Voltage Dependence ◽  
Spin Valve ◽  
Magnetoresistance Effect ◽  
Tunnel Magnetoresistance ◽  
Bias Voltage Dependence

Interfacial Contributions to Magnetostriction of Ferromagnetic Layers for Magnetoresistive Sensors

2002 ◽  
Vol 721 ◽  
Author(s):  
E.W. Singleton ◽  
K.J. Duxstad
Keyword(s):  
Layer Thickness ◽  
Spin Valve ◽  
Magnetic Layer ◽  
Experimental Results ◽  
Ferromagnetic Layers ◽  
Magnetoresistive Sensors

AbstractWe have experimentally measured magnetostriction of thin CoFe layers when deposited with various seed and capping layers. Seed and capping layers were chosen to be materials that may be used in spin-valve (SV) type structures. Materials deposited adjacent to the magnetic layer include Cu, Ta and TaN. The experimental results are interpreted using a model that allows separation of bulk and interface contributions to the measured magnetostriction [1].Results show a clear interfacial contribution that is dependent upon the material at the interface of the magnetic layer. The results demonstrate that surface contributions to the magnetostriction dominate as layer thickness decreases.

scholarly journals Anisotropic magnetoresistance effect in spin valve multilayers

2005 ◽  
Vol 54 (5) ◽  
pp. 2338
Author(s):  
Jiang Hong-Wei ◽  
Wang Ai-Ling ◽  
Zheng Wu
Keyword(s):  
Spin Valve ◽  
Anisotropic Magnetoresistance ◽  
Magnetoresistance Effect

Study of Coercivity-enhanced Ruthenium-doped La0.67Sr0.33MnO3 Thin Films for Pseudo Spin Valve Devices

2008 ◽  
Vol 1074 ◽  
Author(s):  
Yuk Kwan Chan ◽  
Wang Fai Cheng ◽  
Hon Kit Lau ◽  
Chi Wah Leung
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Ambient Pressure ◽  
Spin Valve ◽  
Laser Deposition ◽  
Anisotropic Magnetoresistance ◽  
Enhancement Effect ◽  
Temperature Hysteresis ◽  
Measurement Results ◽  
Ru Doping

ABSTRACTThis investigation focused on the study of La0.67Sr0.33MnO3 (LSMO) thin films with 5 atomic percent Ru-doping (LSMRO). Specifically, we fabricated epitaxial LSMO and LSMRO thin films on LaAlO3 (LAO) (001) substrates by pulsed laser deposition. Resistance- temperature measurement results showed that the Curie temperature (Tc) of LSMRO thin film deposited under an oxygen ambient pressure of 150 mTorr at 830 °C was above room temperature. Hysteresis measurements and anisotropic magnetoresistance (AMR) results confirmed that coercivity of the optimized LSMRO films, as compared with that of LSMO films, can be greatly increased at low temperatures. The study successfully demonstrated the coercivity enhancement effect of Ru-doping on LSMO thin films deposited on LAO substrates.

Pseudo spin-valve structures with NiO/Co as a hard magnetic layer

2004 ◽  
Vol 241 (7) ◽  
pp. 1613-1616
Author(s):  
J. Dubowik ◽  
F. Stobiecki ◽  
B. Szymański ◽  
I. Gościańska ◽  
K. Röll ◽  
...  
Keyword(s):  
Spin Valve ◽  
Magnetic Layer
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