Oscillatory behavior of tunnel magnetoresistance in a magnetic tunnel junction with varying magnetic layer thickness

2011 ◽  
Vol 84 (13) ◽  
Author(s):  
G. Autès ◽  
J. Mathon ◽  
A. Umerski
Keyword(s):  
Layer Thickness ◽  
Tunnel Junction ◽  
Magnetic Layer ◽  
Magnetic Tunnel Junction ◽  
Oscillatory Behavior ◽  
Tunnel Magnetoresistance

High Tunnel Magnetoresistance in Mo/CoFe/MgO Magnetic Tunnel Junction: A First-Principles Study

2017 ◽  
Vol 53 (11) ◽  
pp. 1-4 ◽  
Author(s):  
Jiaqi Zhou ◽  
Weisheng Zhao ◽  
Shouzhong Peng ◽  
Junfeng Qiao ◽  
Jacques-Olivier Klein ◽  
...  
Keyword(s):  
Tunnel Junction ◽  
First Principles ◽  
Magnetic Tunnel Junction ◽  
High Tunnel ◽  
Tunnel Magnetoresistance ◽  
First Principles Study

Study of Electronic Structure In Ni3Fe/Al2O3/Ni3Fe Magnetic Tunnel Junction with Various Ferromagnetic Layer Thicknesses

2005 ◽  
Vol 475-479 ◽  
pp. 3909-3914
Author(s):  
Yuan Zhou ◽  
Xiao Fang Bi ◽  
Jia Xiang Shang ◽  
Hui Bin Xu
Keyword(s):  
Electronic Structure ◽  
Layer Thickness ◽  
Spin Polarization ◽  
Tunnel Junction ◽  
Great Influence ◽  
Ferromagnetic Layer ◽  
Magnetic Tunnel Junction ◽  
Local Spin Density Approximation ◽  
Insulating Layer ◽  
Maximum Value

A series models of Ni3Fe/Al2O3/Ni3Fe magnetic tunnel junction with Al-terminated interfaces have been established for investigating the influence of ferromagnetic layer thickness on the electronic structure, employing first-principle methods based on local spin-density approximation theory. The spin polarization of the interfacial Ni3Fe monolayer shows a maximum value as the thickness of ferromagnetic layer increases. The Al monolayers at the ferromagnetic/insulating interface and the O monolayer in the interior of insulating layer are also studied in terms of the change of spin polarization with the ferromagnetic layer thickness. In addition, we have found that the structure of Ni3Fe monolayer has a great influence on the spin polarization.

Resonant Tunnel Magnetoresistance in a Double Magnetic Tunnel Junction

2011 ◽  
Vol 25 (8) ◽  
pp. 2573-2576
Author(s):  
A. N. Useinov ◽  
N. K. Useinov ◽  
L. R. Tagirov ◽  
J. Kosel
Keyword(s):  
Tunnel Junction ◽  
Magnetic Tunnel Junction ◽  
Tunnel Magnetoresistance ◽  
Resonant Tunnel

scholarly journals Tunnel Magnetoresistance of Fe3O4/MgO/Fe Nanostructures

2011 ◽  
Vol 2011 ◽  
pp. 1-3
Author(s):  
S. G. Chigarev ◽  
E. M. Epshtein ◽  
I. V. Malikov ◽  
G. M. Mikhailov ◽  
P. E. Zilberman
Keyword(s):  
Magnetic Field ◽  
External Magnetic Field ◽  
Magnetic Fields ◽  
Tunnel Junction ◽  
Magnetic Energy ◽  
Magnetic Tunnel Junction ◽  
Tunnel Magnetoresistance ◽  
Unidirectional Anisotropy ◽  
Layer Orientation ◽  
Layer Magnetization

A magnetic tunnel junction Fe3O4/MgO/Fe with (001) layer orientation is considered. The junction magnetic energy is analyzed as a function of the angle between the layer magnetization vectors under various magnetic fields. The tunnel magnetoresistance is calculated as a function of the external magnetic field. In contrast with junctions with unidirectional anisotropy, a substantially lower magnetic field is required for the junction switching.

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