Theory of Strain Relaxation for Epitaxial Layers Grown on Substrate of a Finite Dimension

2000 ◽  
Vol 85 (4) ◽  
pp. 784-787 ◽  
Author(s):  
F. Y. Huang
Keyword(s):  
Finite Dimension ◽  
Strain Relaxation ◽  
Epitaxial Layers

Stress Relaxation in Uniquely Oriented SiGe/Si Epitaxial Layers

1999 ◽  
Vol 594 ◽  
Author(s):  
M. E. Ware ◽  
R. J. Nemanich
Keyword(s):  
Stress Relaxation ◽  
Surface Morphology ◽  
Strain Relaxation ◽  
Epitaxial Layers ◽  
Misfit Dislocations ◽  
Strained Layers ◽  
Force Microscopy ◽  
Si Substrates ◽  
Atomic Force ◽  
Deposited Films

AbstractThis study explores stress relaxation of epitaxial SiGe layers grown on Si substrates with unique orientations. The crystallographic orientations of the Si substrates used were off-axis from the (001) plane towards the (111) plane by angles, θ = 0, 10, and 22 degrees. We have grown 100nm thick Si(1−x) Ge(x) epitaxial layers with x=0.3 on the Si substrates to examine the relaxation process. The as-deposited films are metastable to the formation of strain relaxing misfit dislocations, and thermal annealing is used to obtain highly relaxed films for comparison. Raman spectroscopy has been used to measure the strain relaxation, and atomic force microscopy has been used to explore the development of surface morphology. The Raman scattering indicated that the strain in the as-deposited films is dependent on the substrate orientation with strained layers grown on Si with 0 and 22 degree orientations while highly relaxed films were grown on the 10 degree substrate. The surface morphology also differed for the substrate orientations. The 10 degree surface is relatively smooth with hut shaped structures oriented at predicted angles relative to the step edges.

Strain relaxation of AlxGa1−xN epitaxial layers on GaN and SiC substrates

1999 ◽  
Vol 286 (1-2) ◽  
pp. 284-288 ◽  
Author(s):  
J Domagala ◽  
M Leszczynski ◽  
P Prystawko ◽  
T Suski ◽  
R Langer ◽  
...  
Keyword(s):  
Strain Relaxation ◽  
Epitaxial Layers

Strain relaxation in AlN epitaxial layers grown on GaN single crystals

1999 ◽  
Vol 205 (1-2) ◽  
pp. 31-35 ◽  
Author(s):  
R Langer ◽  
A Barski ◽  
A Barbier ◽  
G Renaud ◽  
M Leszczynski ◽  
...  
Keyword(s):  
Single Crystals ◽  
Strain Relaxation ◽  
Epitaxial Layers

scholarly journals Dislocation dynamics of strain relaxation in epitaxial layers

2001 ◽  
Vol 89 (11) ◽  
pp. 6069-6072 ◽  
Author(s):  
T. C. Wang ◽  
Y. W. Zhang ◽  
S. J. Chua
Keyword(s):  
Strain Relaxation ◽  
Dislocation Dynamics ◽  
Epitaxial Layers

Composition uniformity and large degree of strain relaxation in MBE-grown thick GeSn epitaxial layers, containing 16% Sn

2021 ◽  
Vol 54 (18) ◽  
pp. 185105
Author(s):  
Jaswant Rathore ◽  
Alisha Nanwani ◽  
Samik Mukherjee ◽  
Sudipta Das ◽  
Oussama Moutanabbir ◽  
...  
Keyword(s):  
Strain Relaxation ◽  
Large Degree ◽  
Epitaxial Layers

Strain Relaxation Mechanisms in Lattice Mismatched Epitaxy

1990 ◽  
Vol 198 ◽  
Author(s):  
R. Hull ◽  
J.C. Bean ◽  
J.M. Bonar ◽  
L. Peticolas
Keyword(s):  
Strain Relaxation ◽  
Epitaxial Layers ◽  
Misfit Dislocations ◽  
Strained Layer ◽  
Device Structures ◽  
Lattice Mismatched Epitaxy

ABSTRACTThe relaxation of strained epitaxial layers by the introduction of misfit dislocations is reviewed. Current theoretical and experimental understanding of the nucleation, propagation and interaction of misfit dislocations are summarized. The ramifications for applicability of strained layer epitaxy to practical device structures are discussed.

scholarly journals Strain relaxation in GaN layers grown on porous GaN sublayers

1999 ◽  
Vol 4 (1) ◽  
Author(s):  
M. Mynbaeva ◽  
A. Titkov ◽  
A. Kryzhanovski ◽  
I. Kotousova ◽  
A.S. Zubrilov ◽  
...  
Keyword(s):  
Surface Morphology ◽  
Strain Relaxation ◽  
Vapour Phase ◽  
Crystalline Quality ◽  
Epitaxial Layers ◽  
High Quality ◽  
High Crystalline Quality ◽  
Vapour Phase Epitaxy ◽  
X Ray ◽  
Good Surface

We have studied epitaxial GaN layers grown by hydride vapour phase epitaxy (HVPE) on porous GaN sublayers formed on SiC substrates. It was shown that these layers can be grown with good surface morphology and high crystalline quality. X-ray, Raman and photoluminescent (PL) measurements showed that the stress in the layers grown on porous GaN was reduced to 0.1-0.2 GPa, while the stress in the layers grown directly on 6H-SiC substrates remains at its usual level of about 1 GPa. Thus, we have shown that growth on porous GaN sublayer is a promising method for fabrication of high quality epitaxial layers of GaN with low strain values.

Characterization of strain relaxation behavior in Si1−xGex epitaxial layers by dry oxidation

2017 ◽  
Vol 71 (10) ◽  
pp. 701-706 ◽  
Author(s):  
Hyunchul Jang ◽  
Byongju Kim ◽  
Sangmo Koo ◽  
Seran Park ◽  
Dae-Hong Ko
Keyword(s):  
Strain Relaxation ◽  
Relaxation Behavior ◽  
Epitaxial Layers ◽  
Dry Oxidation

Anisotropic Misfit Strain Relaxation in Thin Epitaxial Layers

1999 ◽  
Vol 171 (1) ◽  
pp. 289-294 ◽  
Author(s):  
J. Domagała ◽  
J. Bąk-Misiuk ◽  
J. Adamczewska ◽  
Z. R. Zytkiewicz ◽  
E. Dynowska ◽  
...  
Keyword(s):  
Strain Relaxation ◽  
Misfit Strain ◽  
Epitaxial Layers
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