Characterization of strain relaxation behavior in Si1−xGex epitaxial layers by dry oxidation

2017 ◽  
Vol 71 (10) ◽  
pp. 701-706 ◽  
Author(s):  
Hyunchul Jang ◽  
Byongju Kim ◽  
Sangmo Koo ◽  
Seran Park ◽  
Dae-Hong Ko
Keyword(s):  
Strain Relaxation ◽  
Relaxation Behavior ◽  
Epitaxial Layers ◽  
Dry Oxidation

scholarly journals Atomic Scale Characterization of Strain Relaxation Behavior in LSFO/LSMO Superlattices

2011 ◽  
Vol 17 (S2) ◽  
pp. 1408-1409
Author(s):  
M Gu ◽  
M Biegalski ◽  
H Christen ◽  
C Song ◽  
C Dearden ◽  
...  
Keyword(s):  
Strain Relaxation ◽  
Relaxation Behavior ◽  
Atomic Scale ◽  
Scale Characterization

Extended abstract of a paper presented at Microscopy and Microanalysis 2011 in Nashville, Tennessee, USA, August 7–August 11, 2011.

Characterization of GaAs[sub 1−x]N[sub x] epitaxial layers by ion beam analysis

2004 ◽  
Vol 22 (3) ◽  
pp. 908 ◽  
Author(s):  
P. Wei ◽  
M. Chicoine ◽  
S. Gujrathi ◽  
F. Schiettekatte ◽  
J.-N. Beaudry ◽  
...  
Keyword(s):  
Ion Beam ◽  
Epitaxial Layers ◽  
Ion Beam Analysis ◽  
Beam Analysis

Raman scattering characterization of group III-nitride epitaxial layers including cubic phase

1998 ◽  
Vol 189-190 ◽  
pp. 435-438 ◽  
Author(s):  
Hiroshi Harima ◽  
Toshiaki Inoue ◽  
Shin-ichi Nakashima ◽  
Hajime Okumura ◽  
Yuuki Ishida ◽  
...  
Keyword(s):  
Raman Scattering ◽  
Cubic Phase ◽  
Epitaxial Layers ◽  
Group Iii ◽  
Group Iii Nitride

Strain relaxation behavior of InxGa1−xAs quantum wells on vicinal GaAs (111)B substrates

2002 ◽  
Vol 80 (9) ◽  
pp. 1541-1543 ◽  
Author(s):  
M. Gutiérrez ◽  
D. González ◽  
G. Aragón ◽  
R. Garcı́a ◽  
M. Hopkinson ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Strain Relaxation ◽  
Relaxation Behavior

Stress Relaxation in Uniquely Oriented SiGe/Si Epitaxial Layers

1999 ◽  
Vol 594 ◽  
Author(s):  
M. E. Ware ◽  
R. J. Nemanich
Keyword(s):  
Stress Relaxation ◽  
Surface Morphology ◽  
Strain Relaxation ◽  
Epitaxial Layers ◽  
Misfit Dislocations ◽  
Strained Layers ◽  
Force Microscopy ◽  
Si Substrates ◽  
Atomic Force ◽  
Deposited Films

AbstractThis study explores stress relaxation of epitaxial SiGe layers grown on Si substrates with unique orientations. The crystallographic orientations of the Si substrates used were off-axis from the (001) plane towards the (111) plane by angles, θ = 0, 10, and 22 degrees. We have grown 100nm thick Si(1−x) Ge(x) epitaxial layers with x=0.3 on the Si substrates to examine the relaxation process. The as-deposited films are metastable to the formation of strain relaxing misfit dislocations, and thermal annealing is used to obtain highly relaxed films for comparison. Raman spectroscopy has been used to measure the strain relaxation, and atomic force microscopy has been used to explore the development of surface morphology. The Raman scattering indicated that the strain in the as-deposited films is dependent on the substrate orientation with strained layers grown on Si with 0 and 22 degree orientations while highly relaxed films were grown on the 10 degree substrate. The surface morphology also differed for the substrate orientations. The 10 degree surface is relatively smooth with hut shaped structures oriented at predicted angles relative to the step edges.

Modified Pulsed MOS Capacitor for Characterization of Ultraclean Thin ${\rm p}/{\rm p}^{+}$ Silicon Epitaxial Layers

2013 ◽  
Vol 60 (8) ◽  
pp. 2592-2597 ◽  
Author(s):  
Arash Elhami Khorasani ◽  
Terry Lynn Alford ◽  
Dieter K. Schroder
Keyword(s):  
Epitaxial Layers ◽  
Mos Capacitor
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