Sonic Band Gaps in Finite Elastic Media: Surface States and Localization Phenomena in Linear and Point Defects

1999 ◽  
Vol 82 (15) ◽  
pp. 3054-3057 ◽  
Author(s):  
M. Torres ◽  
F. R. Montero de Espinosa ◽  
D. García-Pablos ◽  
N. García
Keyword(s):  
Point Defects ◽  
Surface States ◽  
Band Gaps ◽  
Elastic Media

Band Gaps, Band‐Offsets, Disorder, Stability Region, and Point Defects in II‐IV‐N 2 Semiconductors

2019 ◽  
Vol 216 (15) ◽  
pp. 1800875 ◽  
Author(s):  
Sai Lyu ◽  
Dmitry Skachkov ◽  
Kathleen Kash ◽  
Eric W. Blanton ◽  
Walter R. L. Lambrecht
Keyword(s):  
Point Defects ◽  
Stability Region ◽  
Band Gaps ◽  
Band Offsets

scholarly journals Hosting of surface states in spin–orbit induced projected bulk band gaps of W(1 1 0) and Ir(1 1 1)

2017 ◽  
Vol 29 (25) ◽  
pp. 255001 ◽  
Author(s):  
H J Elmers ◽  
D Kutnyakhov ◽  
S V Chernov ◽  
K Medjanik ◽  
O Fedchenko ◽  
...  
Keyword(s):  
Surface States ◽  
Band Gaps ◽  
Spin Orbit ◽  
Bulk Band

Estimating the range of influence of point defects on Cu (110) surface states

2011 ◽  
Vol 83 (15) ◽  
Author(s):  
G. E. Isted ◽  
P. D. Lane ◽  
R. J. Cole ◽  
M. Caffio ◽  
R. Schaub
Keyword(s):  
Point Defects ◽  
Surface States ◽  
Range Of Influence

scholarly journals Quantitative analysis of electrically active defects in Au/AlGaN/GaN HEMTs structure using capacitance–frequency and DLTS measurements

2021 ◽  
Author(s):  
Nargis Bano ◽  
Ijaz Hussain ◽  
Eman Al-Ghamdi ◽  
M. Saeed Ahmad
Keyword(s):  
Time Constant ◽  
Point Defects ◽  
Deep Level ◽  
Surface States ◽  
High Electron Mobility Transistor ◽  
Interface States ◽  
Electron Trap ◽  
Nitrogen Vacancy ◽  
High Electron ◽  
Trap States

Abstract Electrical trap states in the AlGaN-based high-electron-mobility transistor (HEMT) structures limit the performances of devices. In this study, we present a comprehensive study of the electrical trap states in AlGaN/GaN HEMT structures and examine their influence on the device performance. We performed capacitance–frequency and conductance–frequency measurements to determine the time constant and the density of the interface states. The density of the interface states was calculated to be 2 × 1010 cm−2 eV−1, and the time constant of the interface states was 1 μs. Deep-level transient spectroscopy showed the presence of one electron trap E1 (negative peak) and three hole-like traps P1, P2, and P3 (positive peaks). The thermal activation energies for E1, P1, P2, and P3 traps were calculated to be 1.19, 0.64, 0.95, and 1.32 eV, respectively. The electron trap E1 and the hole-like traps P1, P2 and P3 were observed to originate from the point defects or their complexes in the material. The hole-like traps reflected the changes created in the population of the surface states owing to the capture of the surface states; these traps originated from the point defects related to the nitrogen vacancy.

Healing of Surface States and Point Defects in Single-Crystalline  -Ga2O3 Epilayer

2012 ◽  
Vol 45 (7) ◽  
pp. 79-84 ◽  
Author(s):  
P. Ravadgar ◽  
R.-H. Horng ◽  
T. Y. Wang
Keyword(s):  
Point Defects ◽  
Surface States ◽  
Single Crystalline

Point defects in lines in single crystalline phosphorene: directional migration and tunable band gaps

Nanoscale ◽  
2016 ◽  
Vol 8 (41) ◽  
pp. 17801-17808 ◽  
Author(s):  
Xiuling Li ◽  
Liang Ma ◽  
Dayong Wang ◽  
Xiao Cheng Zeng ◽  
Xiaojun Wu ◽  
...  
Keyword(s):  
Point Defects ◽  
Band Gaps ◽  
Directional Migration ◽  
Single Crystalline
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