Phase analysis of image states and surface states associated with nearly-free-electron band gaps

1985 ◽  
Vol 32 (6) ◽  
pp. 3549-3555 ◽  
Author(s):  
N. V. Smith
Keyword(s):  
Phase Analysis ◽  
Free Electron ◽  
Surface States ◽  
Band Gaps ◽  
Electron Band ◽  
Image States

scholarly journals Hosting of surface states in spin–orbit induced projected bulk band gaps of W(1 1 0) and Ir(1 1 1)

2017 ◽  
Vol 29 (25) ◽  
pp. 255001 ◽  
Author(s):  
H J Elmers ◽  
D Kutnyakhov ◽  
S V Chernov ◽  
K Medjanik ◽  
O Fedchenko ◽  
...  
Keyword(s):  
Surface States ◽  
Band Gaps ◽  
Spin Orbit ◽  
Bulk Band

Image states on a free-electron metal surface covered by an atomically thin insulator layer

2003 ◽  
Vol 528 (1-3) ◽  
pp. 78-83 ◽  
Author(s):  
D.C. Marinica ◽  
C. Ramseyer ◽  
A.G. Borisov ◽  
D. Teillet-Billy ◽  
J.P. Gauyacq
Keyword(s):  
Metal Surface ◽  
Free Electron ◽  
Insulator Layer ◽  
Image States

Surface states and space charge layer dynamics on Si(111)2×1: A free electron laser-synchrotron radiation study

1997 ◽  
Vol 70 (7) ◽  
pp. 895-897 ◽  
Author(s):  
M. Marsi ◽  
M. E. Couprie ◽  
L. Nahon ◽  
D. Garzella ◽  
T. Hara ◽  
...  
Keyword(s):  
Synchrotron Radiation ◽  
Space Charge ◽  
Free Electron ◽  
Free Electron Laser ◽  
Surface States ◽  
Space Charge Layer ◽  
Charge Layer ◽  
Radiation Study

Magneto-Optical Studies of GaAs-AlGaAs Modulation Doped Quantum Wells Under Hydrostatic Pressure

1989 ◽  
Vol 160 ◽  
Author(s):  
Weimin Zhou ◽  
Clive H. Perry ◽  
John M. Worlock
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Free Electron ◽  
Pressure Coefficient ◽  
Band Gaps ◽  
Interband Transitions ◽  
Optical Studies ◽  
Electron Effective Mass ◽  
Quantum Well Structures ◽  
First Time

AbstractHigh pressure photoluminescence measurements on modulation doped GaAs-AlGaAs quantum well structures have been performed for the first time with applied magnetic fields up to 15 Tesla. We have observed Landau fans from interband transitions of the 2D free electron gas between 0 and 8.5 kbar. In this pressure range the electron effective mass in GaAs increased at the rate of 2.6% per kbar. Above 9 kbar, the free Landau transitions disappeared and bound magneto-exiton behaviour dominated the spectrum. The influence of pressure on the band-gaps causes a controlled trapping of the free electron from the GaAs well to Si donors (DX centers) in the AlGaAs layers. Above 9 kbar the pressure coefficient of the GaAs band gap was found to be 10.4 meV/kbar which is comparable to the accepted value in undoped GaAs quantum well structures.

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