Electronic Structure of Amorphous Silicon Nanoclusters

1997 ◽  
Vol 78 (16) ◽  
pp. 3161-3164 ◽  
Author(s):  
G. Allan ◽  
C. Delerue ◽  
M. Lannoo
2006 ◽  
Vol 88 (16) ◽  
pp. 163103 ◽  
Author(s):  
Anna Zimina ◽  
Stefan Eisebitt ◽  
Wolfgang Eberhardt ◽  
Johannes Heitmann ◽  
Margit Zacharias

1993 ◽  
Vol 47 (7) ◽  
pp. 3991-3994 ◽  
Author(s):  
J. M. Holender ◽  
G. J. Morgan ◽  
R. Jones

1989 ◽  
Vol 39 (5) ◽  
pp. 3445-3448 ◽  
Author(s):  
L. Martín-Moreno ◽  
J. A. Vergés

1997 ◽  
Vol 486 ◽  
Author(s):  
G. Allan ◽  
C. Delerue ◽  
M. Lannoo

AbstractThe electronic structure of amorphous silicon layers has been calculated within the empirical tight binding approximation using the Wooten-Winer-Weaire atomic structure model. We predict an important blue shift due to the confinement for layer thickness below 3 nm and we compare with crystalline silicon layers. The radiative recombination rate is enhanced by the disorder and the confinement but remains quite small. The comparison of our results with experimental results shows that the density of defects and localized states in the studied samples must be quite small.


2013 ◽  
Vol 49 ◽  
pp. 72-75 ◽  
Author(s):  
J.S. Vainshtein ◽  
O.S. Yeltsina ◽  
E.I. Terukov ◽  
O.M. Sreseli

1986 ◽  
Vol 54 (5) ◽  
pp. 335-342 ◽  
Author(s):  
B. Drevillon ◽  
C. Senemaud ◽  
C. Cardinaud ◽  
M. Driss Khodja ◽  
C. Codet

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