Electronic structure and chemical environment of silicon nanoclusters embedded in a silicon dioxide matrix

2006 ◽  
Vol 88 (16) ◽  
pp. 163103 ◽  
Author(s):  
Anna Zimina ◽  
Stefan Eisebitt ◽  
Wolfgang Eberhardt ◽  
Johannes Heitmann ◽  
Margit Zacharias
Keyword(s):  
Electronic Structure ◽  
Silicon Dioxide ◽  
Chemical Environment ◽  
Silicon Nanoclusters ◽  
Silicon Dioxide Matrix

Electronic structure of silicon dioxide (a review)

2014 ◽  
Vol 56 (2) ◽  
pp. 207-222 ◽  
Author(s):  
S. S. Nekrashevich ◽  
V. A. Gritsenko
Keyword(s):  
Electronic Structure ◽  
Silicon Dioxide

Silicon Carbide Nanowire Devices for Label-Free Electrical DNA Detection

2015 ◽  
Vol 821-823 ◽  
pp. 855-858 ◽  
Author(s):  
Louis Fradetal ◽  
Edwige Bano ◽  
Laurent Montes ◽  
Giovanni Atolini ◽  
Valérie Stambouli
Keyword(s):  
Silicon Carbide ◽  
Silicon Dioxide ◽  
Sol Gel ◽  
Label Free ◽  
Dna Molecules ◽  
Metal Insulator ◽  
Capacitance Measurements ◽  
Silicon Dioxide Matrix ◽  
Nanopillar Arrays

Silicon Carbide is a promising material to overtake the limitations of Si sensors used forin vivodetection. Here, two different nanodevices are presented. The first one is a SiC NWFET used for electrical detection of DNA molecules. The addition of DNA probe molecules increases the current by 25% and the hybridization with DNA targets increases by 80%. This confirms the efficiency of our sensor to detect DNA. The second one is a Metal Insulator Semicondutor capacitor composed of DNA functionalized SiC nanopillar arrays embedded in a sol-gel silicon dioxide matrix. Capacitance measurements show a singular response between 80 and 100 Hz which is attributed to the presence of DNA molecules.

scholarly journals Distinct effects of Cr bulk doping and surface deposition on the chemical environment and electronic structure of the topological insulator Bi2Se3

2017 ◽  
Vol 407 ◽  
pp. 371-378 ◽  
Author(s):  
Turgut Yilmaz ◽  
William Hines ◽  
Fu-Chang Sun ◽  
Ivo Pletikosić ◽  
Joseph Budnick ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Topological Insulator ◽  
Chemical Environment ◽  
Surface Deposition

Cobalt ferrite nanoparticles in a mesoporous silicon dioxide matrix

2009 ◽  
Vol 35 (10) ◽  
pp. 882-884 ◽  
Author(s):  
S. V. Komogortsev ◽  
T. N. Patrusheva ◽  
D. A. Balaev ◽  
E. A. Denisova ◽  
I. V. Ponomarenko
Keyword(s):  
Silicon Dioxide ◽  
Cobalt Ferrite ◽  
Ferrite Nanoparticles ◽  
Mesoporous Silicon ◽  
Cobalt Ferrite Nanoparticles ◽  
Mesoporous Silicon Dioxide ◽  
Silicon Dioxide Matrix

scholarly journals Влияние кислородных вакансий на формирование и структуру филамента в мемристорах на основе диоксида кремния

2020 ◽  
Vol 46 (1) ◽  
pp. 24
Author(s):  
Е.В. Окулич ◽  
В.И. Окулич ◽  
Д.И. Тетельбаум
Keyword(s):  
Surface Layer ◽  
Silicon Dioxide ◽  
Oxygen Vacancies ◽  
Silicon Nanoclusters ◽  
Silicon Dioxide Film ◽  
Amorphous Sio2 ◽  
Near Surface ◽  
Molecular Dynamic Modeling ◽  
Formation And Evolution ◽  
Dioxide Film

The improvement of the parameters of the SiO2-based memristor is found when creating displacement cascades in the near-surface layer of a silicon dioxide film by irradiation with Xe+ ions. Molecular dynamic modeling of the structure of amorphous SiO2 enriched with oxygen vacancies has shown the possibility of nucleation of silicon nanoclusters, which can play a significant role in the formation and evolution of current conducting paths (filaments) and thereby affect the parameters of the memristor.

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