Effect of under- and overcoordination on the electronic structure of amorphous silicon

1989 ◽  
Vol 39 (5) ◽  
pp. 3445-3448 ◽  
Author(s):  
L. Martín-Moreno ◽  
J. A. Vergés
Keyword(s):  
Electronic Structure ◽  
Amorphous Silicon

Model of hydrogenated amorphous silicon and its electronic structure

1993 ◽  
Vol 47 (7) ◽  
pp. 3991-3994 ◽  
Author(s):  
J. M. Holender ◽  
G. J. Morgan ◽  
R. Jones
Keyword(s):  
Electronic Structure ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Hydrogenated Amorphous

Luminescent Amorphous Silicon Layers

1997 ◽  
Vol 486 ◽  
Author(s):  
G. Allan ◽  
C. Delerue ◽  
M. Lannoo
Keyword(s):  
Electronic Structure ◽  
Amorphous Silicon ◽  
Radiative Recombination ◽  
Crystalline Silicon ◽  
Tight Binding ◽  
Blue Shift ◽  
Localized States ◽  
Structure Model ◽  
Radiative Recombination Rate ◽  
Tight Binding Approximation

AbstractThe electronic structure of amorphous silicon layers has been calculated within the empirical tight binding approximation using the Wooten-Winer-Weaire atomic structure model. We predict an important blue shift due to the confinement for layer thickness below 3 nm and we compare with crystalline silicon layers. The radiative recombination rate is enhanced by the disorder and the confinement but remains quite small. The comparison of our results with experimental results shows that the density of defects and localized states in the studied samples must be quite small.

Electronic structure studies of plasma-deposited amorphous silicon

1986 ◽  
Vol 54 (5) ◽  
pp. 335-342 ◽  
Author(s):  
B. Drevillon ◽  
C. Senemaud ◽  
C. Cardinaud ◽  
M. Driss Khodja ◽  
C. Codet
Keyword(s):  
Electronic Structure ◽  
Amorphous Silicon

Electronic structure of vacancies in amorphous silicon

1995 ◽  
Vol 51 (8) ◽  
pp. 5429-5432 ◽  
Author(s):  
Eunja Kim ◽  
Young Hee Lee
Keyword(s):  
Electronic Structure ◽  
Amorphous Silicon

Electronic Structure of Defects in Amorphous Silicon Nitride

1992 ◽  
Vol 284 ◽  
Author(s):  
John Robertson
Keyword(s):  
Electronic Structure ◽  
Silicon Nitride ◽  
Percolation Threshold ◽  
Amorphous Silicon ◽  
Electronic Properties ◽  
Valence Band ◽  
Band Edge ◽  
Valence Band Edge ◽  
Dangling Bonds ◽  
Amorphous Silicon Nitride

ABSTRACTThe paper reviews the electronic properties of defects in amorphous silicon nitride (a-Si3N4) and the hydrogenated alloys a-SiNx:H. The main defects in a-Si3N4 are the Si and N dangling bonds (DBs). The Si DB forms a sp3 state near midgap, while the N DB forms a highly localized pπ level just above the valence band edge. The behaviour of the alloys changes near x ≈ 1.1, the percolation threshold of Si-Si bonds. In the Si-rich alloys, both band edges are Si-like, only Si DBs are seen and their density is controlled by equilibration with weak Si-Si bonds. The x>1.1 alloys behave like silicon nitride; the valence band changes towards N pπ-like, both Si and N DBs can arise, the Si DB can have a high density and prefers to be in its charged diamagnetic configurations.

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