scholarly journals Atomic-Scale Determination of Misfit Dislocation Loops at Metal-Metal Interfaces

1995 ◽  
Vol 75 (3) ◽  
pp. 489-492 ◽  
Author(s):  
J. Jacobsen ◽  
L. Pleth Nielsen ◽  
F. Besenbacher ◽  
I. Stensgaard ◽  
E. Lægsgaard ◽  
...  
Keyword(s):  
Misfit Dislocation ◽  
Atomic Scale ◽  
Dislocation Loops ◽  
Metal Metal ◽  
Metal Interfaces

Weak Beam Imaging and Diffraction Studies of Stacking Faults in Silicon

1976 ◽  
Vol 34 ◽  
pp. 590-591
Author(s):  
T. Y. Tan ◽  
W. K. Tice
Keyword(s):  
Fast Neutron ◽  
Rapid Determination ◽  
Stacking Faults ◽  
Imaging Method ◽  
Large Reduction ◽  
Dislocation Loops ◽  
Fringe Spacing ◽  
Weak Beam ◽  
Kinematical Theory

In studying ion implanted semiconductors and fast neutron irradiated metals, the need for characterizing small dislocation loops having diameters of a few hundred angstrom units usually arises. The weak beam imaging method is a powerful technique for analyzing these loops. Because of the large reduction in stacking fault (SF) fringe spacing at large sg, this method allows for a rapid determination of whether the loop is faulted, and, hence, whether it is a perfect or a Frank partial loop. This method was first used by Bicknell to image small faulted loops in boron implanted silicon. He explained the fringe spacing by kinematical theory, i.e., ≃l/(Sg) in the fault fringe in depth oscillation. The fault image contrast formation mechanism is, however, really more complicated.

Quasiperiodic interfaces: HREM observations of grain and phase boundaries

1990 ◽  
Vol 48 (4) ◽  
pp. 332-333
Author(s):  
K. L. Merkle
Keyword(s):  
Atomic Structure ◽  
Direct Determination ◽  
Lattice Parameter ◽  
Atomic Scale ◽  
Misfit Dislocations ◽  
Oxide Systems ◽  
Atomic Structures ◽  
Periodic Arrays ◽  
Parameter Ratio ◽  
Metal Metal

The atomic structures of internal interfaces have recently received considerable attention, not only because of their importance in determining many materials properties, but also because the atomic structure of many interfaces has become accessible to direct atomic-scale observation by modem HREM instruments. In this communication, several interface structures are examined by HREM in terms of their structural periodicities along the interface.It is well known that heterophase boundaries are generally formed by two low-index planes. Often, as is the case in many fcc metal/metal and metal/metal-oxide systems, low energy boundaries form in the cube-on-cube orientation on (111). Since the lattice parameter ratio between the two materials generally is not a rational number, such boundaries are incommensurate. Therefore, even though periodic arrays of misfit dislocations have been observed by TEM techniques for numerous heterophase systems, such interfaces are quasiperiodic on an atomic scale. Interfaces with misfit dislocations are semicoherent, where atomically well-matched regions alternate with regions of misfit. When the misfit is large, misfit localization is often difficult to detect, and direct determination of the atomic structure of the interface from HREM alone, may not be possible.

Anisotropy of Nanoindentation – a tool for the determination of nanocrystal orientation ?

2003 ◽  
Vol 779 ◽  
Author(s):  
David Christopher ◽  
Steven Kenny ◽  
Roger Smith ◽  
Asta Richter ◽  
Bodo Wolf ◽  
...  
Keyword(s):  
Crystal Surface ◽  
Scanning Force Microscopy ◽  
Depth Range ◽  
Dislocation Loops ◽  
Force Microscopy ◽  
Pile Up ◽  
Out Of Plane ◽  
Scanning Force ◽  
Dynamics Simulations

AbstractThe pile up patterns arising in nanoindentation are shown to be indicative of the sample crystal symmetry. To explain and interpret these patterns, complementary molecular dynamics simulations and experiments have been performed to determine the atomistic mechanisms of the nanoindentation process in single crystal Fe{110}. The simulations show that dislocation loops start from the tip and end on the crystal surface propagating outwards along the four in-plane <111> directions. These loops carry material away from the indenter and form bumps on the surface along these directions separated from the piled-up material around the indenter hole. Atoms also move in the two out-of-plane <111> directions causing propagation of subsurface defects and pile-up around the hole. This finding is confirmed by scanning force microscopy mapping of the imprint, the piling-up pattern proving a suitable indicator of the surface crystallography. Experimental force-depth curves over the depth range of a few nanometers do not appear smooth and show distinct pop-ins. On the sub-nanometer scale these pop-ins are also visible in the simulation curves and occur as a result of the initiation of the dislocation loops from the tip.

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