Oxygen frustration and the interstitial carbon-oxygen complex in Si

1992 ◽  
Vol 68 (1) ◽  
pp. 86-89 ◽  
Author(s):  
R. Jones ◽  
S. Öberg
Keyword(s):  
Interstitial Carbon ◽  
Oxygen Complex

Identification of An Interstitial Carbon – Interstitial oxygen Complex in Silicon

1987 ◽  
Vol 104 ◽  
Author(s):  
J. M. Trombetta ◽  
G. D. Watkins
Keyword(s):  
Carbon Atom ◽  
Oxygen Atom ◽  
Lattice Relaxation ◽  
Luminescence Spectra ◽  
Interstitial Oxygen ◽  
Epr Spectrum ◽  
Interstitial Carbon ◽  
Oxygen Complex ◽  
Interaction Tensor ◽  
Carbon Interstitial

ABSTRACTThe Si-G15 EPR spectrum and the 0.79eV “C-line” luminescence spectra in silicon are shown to arise from an interstitial carbon - interstitial oxygen complex. The g-tensor and 13C hyperfine interaction tensor indicate the structure in the vicinity of the carbon atom while stress alignment studies reveal the configuration near the oxygen atom. The pairing of the two impurities leads to a lattice relaxation which serves to stabilize the complex against dissociation.

DLTS Studies of Carbon Related Complexes in Irradiated N- and P-Silicon

2009 ◽  
Vol 156-158 ◽  
pp. 155-160 ◽  
Author(s):  
L.F. Makarenko ◽  
F.P. Korshunov ◽  
Stanislav B. Lastovskii ◽  
L.I. Murin ◽  
Michael Moll
Keyword(s):  
Energy Level ◽  
Crystallographic Orientation ◽  
Room Temperature ◽  
Interstitial Oxygen ◽  
Transformation Kinetics ◽  
Interstitial Carbon ◽  
Oxygen Complex ◽  
Carbon Interstitial ◽  
P Type ◽  
Kinetics Of

DLTS studies of transformation kinetics of different carbon–related complexes in electron irradiated n- and p-type silicon have been performed. It has been found that silicon self-interstitials have very low mobility even at room temperature in p-Si, but become extremely mobile under elec-tron injection. It is shown that upon annealing of interstitial carbon in p-Si a metastable state for interstitial carbon-interstitial oxygen complex is formed. This state has an energy level of about Еv+0.36 eV. The formation of the stable and metastable states takes place concurrently. The observed features of the carbon-related complexes formation are likely related to the existence of different crystallographic orientation of the equiprobable pathways through which the interstitial carbon and oxygen atoms can approach each other.

Over-coordinated oxygen in the interstitial carbon–oxygen complex

2001 ◽  
Vol 308-310 ◽  
pp. 305-308 ◽  
Author(s):  
J Coutinho ◽  
R Jones ◽  
P.R Briddon ◽  
S Öberg ◽  
L.I Murin ◽  
...  
Keyword(s):  
Interstitial Carbon ◽  
Oxygen Complex

An atomic resolution study of a carbide phase in platinum

1992 ◽  
Vol 50 (1) ◽  
pp. 20-21
Author(s):  
M.J. Witcomb ◽  
M.A. O'Keefe ◽  
CJ. Echer ◽  
C. Nelson ◽  
J.H. Turner ◽  
...  
Keyword(s):  
Solid Solution ◽  
Carbon Atom ◽  
Carbide Phase ◽  
Structural Changes ◽  
Critical Role ◽  
Alloy System ◽  
Atomic Resolution ◽  
Excess Carbon ◽  
Interstitial Carbon ◽  
Resolution Study

Under normal circumstances, Pt dissolves only a very small amount of interstitial carbon in solid solution. Even so, an appropriate quench/age treatment leads to the formation of stable Pt2C {100} plate precipitates. Excess (quenched-in) vacancies play a critical role in the process by accommodating the volume and structural changes that accompany the transformation. This alloy system exhibits other interesting properties. Due to a large vacancy/carbon atom binding energy, Pt can absorb excess carbon at high temperatures in a carburizing atmosphere. In regions rich in carbon and vacancies, another carbide phase, Pt7C which undergoes an order-disorder reaction was formed. The present study of Pt carburized at 1160°C and aged at 515°C shows that other carbides in the PtxC series can be produced.

Trivacancy-oxygen complex in silicon: Local vibrational mode characterization

2009 ◽  
Vol 404 (23-24) ◽  
pp. 4568-4571
Author(s):  
L.I. Murin ◽  
B.G. Svensson ◽  
J.L. Lindström ◽  
V.P. Markevich ◽  
C.A. Londos
Keyword(s):  
Vibrational Mode ◽  
Local Vibrational Mode ◽  
Oxygen Complex
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