Identification of an interstitial carbon‐interstitial oxygen complex in silicon

1987 ◽  
Vol 51 (14) ◽  
pp. 1103-1105 ◽  
Author(s):  
J. M. Trombetta ◽  
G. D. Watkins
Keyword(s):  
Interstitial Oxygen ◽  
Interstitial Carbon ◽  
Oxygen Complex ◽  
Carbon Interstitial

Identification of An Interstitial Carbon – Interstitial oxygen Complex in Silicon

1987 ◽  
Vol 104 ◽  
Author(s):  
J. M. Trombetta ◽  
G. D. Watkins
Keyword(s):  
Carbon Atom ◽  
Oxygen Atom ◽  
Lattice Relaxation ◽  
Luminescence Spectra ◽  
Interstitial Oxygen ◽  
Epr Spectrum ◽  
Interstitial Carbon ◽  
Oxygen Complex ◽  
Interaction Tensor ◽  
Carbon Interstitial

ABSTRACTThe Si-G15 EPR spectrum and the 0.79eV “C-line” luminescence spectra in silicon are shown to arise from an interstitial carbon - interstitial oxygen complex. The g-tensor and 13C hyperfine interaction tensor indicate the structure in the vicinity of the carbon atom while stress alignment studies reveal the configuration near the oxygen atom. The pairing of the two impurities leads to a lattice relaxation which serves to stabilize the complex against dissociation.

DLTS Studies of Carbon Related Complexes in Irradiated N- and P-Silicon

2009 ◽  
Vol 156-158 ◽  
pp. 155-160 ◽  
Author(s):  
L.F. Makarenko ◽  
F.P. Korshunov ◽  
Stanislav B. Lastovskii ◽  
L.I. Murin ◽  
Michael Moll
Keyword(s):  
Energy Level ◽  
Crystallographic Orientation ◽  
Room Temperature ◽  
Interstitial Oxygen ◽  
Transformation Kinetics ◽  
Interstitial Carbon ◽  
Oxygen Complex ◽  
Carbon Interstitial ◽  
P Type ◽  
Kinetics Of

DLTS studies of transformation kinetics of different carbon–related complexes in electron irradiated n- and p-type silicon have been performed. It has been found that silicon self-interstitials have very low mobility even at room temperature in p-Si, but become extremely mobile under elec-tron injection. It is shown that upon annealing of interstitial carbon in p-Si a metastable state for interstitial carbon-interstitial oxygen complex is formed. This state has an energy level of about Еv+0.36 eV. The formation of the stable and metastable states takes place concurrently. The observed features of the carbon-related complexes formation are likely related to the existence of different crystallographic orientation of the equiprobable pathways through which the interstitial carbon and oxygen atoms can approach each other.

Microwave Studies of Electron Scattering by Isolated Interstitial Oxygen and Oxygen Complex in Silicon

1992 ◽  
Vol 31 (Part 1, No. 4) ◽  
pp. 957-964 ◽  
Author(s):  
Tyuzi Ohyama ◽  
Kohei Sugihara ◽  
Eizo Otsuka
Keyword(s):  
Electron Scattering ◽  
Interstitial Oxygen ◽  
Oxygen Complex

A Comprehensive Model for Carbon Suppression of Boron Transient Enhanced Diffusion

2001 ◽  
Vol 669 ◽  
Author(s):  
Julie L. Ngau ◽  
Peter B. Griffin ◽  
James D. Plummer
Keyword(s):  
Point Defect ◽  
Recent Work ◽  
Comprehensive Model ◽  
Pairing Mechanism ◽  
Diffusion Behavior ◽  
Interstitial Carbon ◽  
Enhanced Diffusion ◽  
Transient Enhanced Diffusion ◽  
Single Temperature ◽  
Carbon Interstitial

ABSTRACTIn this work, the time evolution of B transient enhanced diffusion (TED) suppression due to the incorporation of 0.018% substitutional carbon in silicon was studied. The combination of having low C concentrations, which reduce B TED without completely eliminating it, and having diffused B profiles for several times at a single temperature provides much data upon which various models for the suppression of B TED can be tested. Recent work in the literature has indicated that the suppression of B TED in C-rich Si is caused by non-equilibrium Si point defect concentrations, specifically the undersaturation of Si self-interstitials, that result from the coupled out-diffusion of carbon interstitials via the kick-out and Frank-Turnbull reactions. Attempts to model our data with these two reactions revealed that the time evolved diffusion behavior of B was not accurately simulated and that an additional reaction that further reduces the Si self-inter- stitial concentration was necessary. In this work, we incorporate a carbon interstitial, carbon substitutional (CiCs) pairing mechanism into a comprehensive model that includes the C kick-out reaction, C Frank-Turnbull reaction, {311} defects, and boron interstitial clusters (BICs) and demonstrate that this model successfully simulates C suppression of B TED at 750 °C for anneal times ranging from 10 s to 60 min.

Identification of a bistable defect in silicon: The carbon interstitial‐carbon substitutional pair

1987 ◽  
Vol 51 (15) ◽  
pp. 1155-1157 ◽  
Author(s):  
L. W. Song ◽  
B. W. Benson ◽  
G. D. Watkins
Keyword(s):  
Interstitial Carbon ◽  
Carbon Interstitial

Cluster Computations Related to Silicon Thermal Donors

1985 ◽  
Vol 59 ◽  
Author(s):  
Lawrence C. Snyder ◽  
James W. Corbett
Keyword(s):  
Crystalline Silicon ◽  
Silicon Crystal ◽  
Silicon Monoxide ◽  
Interstitial Oxygen ◽  
Hydrogen Atoms ◽  
Oxygen Complex ◽  
Quantum Chemical Computations ◽  
Silicon Oxygen ◽  
Boron Carbon ◽  
Oxygen Atoms

ABSTRACTAb-initio quantum chemical computations have been applied to a set of molecular clusters derived from Si5 H12 to model defects in crystalline silicon involving boron, carbon, nitrogen, oxygen, and hydrogen. In computations of defect structure, hydrogen atoms terminating silicon valencies are fixed at their computed positions in Si5H12, to represent forces from the lattice, while the position of other atoms are varied.We have computed the stable bonding structures of boron, carbon, nitrogen and oxygen atoms to a vacancy, as well as interstitial oxygen, the silicon-oxygen ylid and two oxygen atoms bound to a vacancy. The structures of the dipositive ions of the oxygen bearing clusters have been computed as part of a search for candidates for the core of the 450° C oxygen thermal donor in silicon crystal. The computed cluster energies are employed to give an account of defect thermochemistry; the addition of the free atoms to a vacancy, the addition of interstitial oxygen atoms to a vacancy, the reaction of interstitial oxygen atoms to form a vacancy-oxygen complex with the emission of silicon monoxide, and the reaction of interstitial oxygen with the dipositive ion of substitutional oxygen to form the dipositive ion of two oxygen atoms bound to a vacancy.

scholarly journals The Interstitial Carbon–Dioxygen Center in Irradiated Silicon

Crystals ◽  
2020 ◽  
Vol 10 (11) ◽  
pp. 1005
Author(s):  
Marianna S. Potsidi ◽  
Navaratnarajah Kuganathan ◽  
Stavros-Richard G. Christopoulos ◽  
Alexander Chroneos ◽  
Theoharis Angeletos ◽  
...  
Keyword(s):  
Density Functional ◽  
Dipole Interaction ◽  
Energy Structure ◽  
Potential Candidate ◽  
Interstitial Oxygen ◽  
Local Vibrational Mode ◽  
Ir Studies ◽  
Oxygen Interstitial ◽  
A Value ◽  
Carbon Interstitial

We investigated, experimentally as well as theoretically, defect structures in electron irradiated Czochralski-grown silicon (Cz-Si) containing carbon. Infrared spectroscopy (IR) studies observed a band at 1020 cm−1 arisen in the spectra around 300 °C. Its growth occurs concomitantly with the decay out of the well-known vacancy-oxygen (VO) defect, with a Local Vibrational Mode (LVM) at 830 cm−1 and carbon interstitial-oxygen interstitial (CiOi) defect with a LVM at 862 cm−1, in silicon (Si). The main purpose of this work is to establish the origin of the 1020 cm−1 band. One potential candidate is the carbon interstitial-dioxygen (CiO2i) defect since it is expected to form upon annealing out of the CiOi pair. To this end, systematic density functional theory (DFT) calculations were used to predict the lowest energy structure of the (CiO2i) defect in Si. Thereafter, we employed the dipole–dipole interaction method to calculate the vibrational frequencies of the structure. We found that CiO2i defect has an LVM at ~1006 cm−1, a value very close to our experimental one. The analysis and study of the results lead us to tentatively correlate the 1020 cm−1 band with the CiO2i defect.

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