Interstitial carbon‐oxygen complex in near threshold electron irradiated silicon

1992 ◽  
Vol 61 (22) ◽  
pp. 2691-2693 ◽  
Author(s):  
K. Shinoda ◽  
E. Ohta
1987 ◽  
Vol 104 ◽  
Author(s):  
J. M. Trombetta ◽  
G. D. Watkins

ABSTRACTThe Si-G15 EPR spectrum and the 0.79eV “C-line” luminescence spectra in silicon are shown to arise from an interstitial carbon - interstitial oxygen complex. The g-tensor and 13C hyperfine interaction tensor indicate the structure in the vicinity of the carbon atom while stress alignment studies reveal the configuration near the oxygen atom. The pairing of the two impurities leads to a lattice relaxation which serves to stabilize the complex against dissociation.


2009 ◽  
Vol 156-158 ◽  
pp. 155-160 ◽  
Author(s):  
L.F. Makarenko ◽  
F.P. Korshunov ◽  
Stanislav B. Lastovskii ◽  
L.I. Murin ◽  
Michael Moll

DLTS studies of transformation kinetics of different carbon–related complexes in electron irradiated n- and p-type silicon have been performed. It has been found that silicon self-interstitials have very low mobility even at room temperature in p-Si, but become extremely mobile under elec-tron injection. It is shown that upon annealing of interstitial carbon in p-Si a metastable state for interstitial carbon-interstitial oxygen complex is formed. This state has an energy level of about Еv+0.36 eV. The formation of the stable and metastable states takes place concurrently. The observed features of the carbon-related complexes formation are likely related to the existence of different crystallographic orientation of the equiprobable pathways through which the interstitial carbon and oxygen atoms can approach each other.


2001 ◽  
Vol 308-310 ◽  
pp. 305-308 ◽  
Author(s):  
J Coutinho ◽  
R Jones ◽  
P.R Briddon ◽  
S Öberg ◽  
L.I Murin ◽  
...  

Author(s):  
M.J. Witcomb ◽  
M.A. O'Keefe ◽  
CJ. Echer ◽  
C. Nelson ◽  
J.H. Turner ◽  
...  

Under normal circumstances, Pt dissolves only a very small amount of interstitial carbon in solid solution. Even so, an appropriate quench/age treatment leads to the formation of stable Pt2C {100} plate precipitates. Excess (quenched-in) vacancies play a critical role in the process by accommodating the volume and structural changes that accompany the transformation. This alloy system exhibits other interesting properties. Due to a large vacancy/carbon atom binding energy, Pt can absorb excess carbon at high temperatures in a carburizing atmosphere. In regions rich in carbon and vacancies, another carbide phase, Pt7C which undergoes an order-disorder reaction was formed. The present study of Pt carburized at 1160°C and aged at 515°C shows that other carbides in the PtxC series can be produced.


1963 ◽  
Vol 6 (4) ◽  
pp. 359-368 ◽  
Author(s):  
Charles I. Berlin

Hearing in mice has been difficult to measure behaviorally. With GSR as the basic tool, the sensitivity curve to pure tones in mice has been successfully outlined. The most sensitive frequency-intensity combination was 15 000 cps at 0-5 dB re: 0.0002 dyne/cm 2 , with responses noted from 1 000 to beyond 70 000 cps. Some problems of reliability of conditioning were encountered, as well as findings concerning the inverse relationship between the size of GSR to unattenuated tones and the sound pressure necessary to elicit conditioned responses at or near threshold. These data agree well with the sensitivity of single units of the eighth nerve of the mouse.


2009 ◽  
Vol 404 (23-24) ◽  
pp. 4568-4571
Author(s):  
L.I. Murin ◽  
B.G. Svensson ◽  
J.L. Lindström ◽  
V.P. Markevich ◽  
C.A. Londos

Author(s):  
Birgitta Berglund ◽  
Lennart Hoegman ◽  
Ingegerd Johansson
Keyword(s):  

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