Microstructural evolution of ultrathin amorphous silicon films by real-time spectroscopic ellipsometry

1990 ◽  
Vol 65 (18) ◽  
pp. 2274-2277 ◽  
Author(s):  
Ilsin An ◽  
H. V. Nguyen ◽  
N. V. Nguyen ◽  
R. W. Collins
1998 ◽  
Vol 507 ◽  
Author(s):  
H. Fujiwara ◽  
Joohyun Koh ◽  
Yeeheng Lee ◽  
C. R. Wronski ◽  
R. W. Collins

ABSTRACTWe have introduced real time spectroscopic ellipsometry (RTSE) for characterization of the solid phase crystallization (SPC) of intrinsic and n-type amorphous silicon (a-Si:H) thin films. RTSE has several advantages in the study and design of SPC processes for thin film transistor and solar cell fabrication. These include the capability of obtaining (i) calibration data that yield the near surface temperature of the film during processing, (ii) the volume fraction of the crystalline Si component of the film continuously versus time during SPC, and (iii) a measurement of the grain size and quality of the final polycrystalline Si film. For the thin layers studied here (∼150-1000 Å), we demonstrate excellent fitting of the SPC dynamics to the Avrami-Johnson-Mehl theory for random nucleation and two-dimensional crystallite growth. For a-Si:H n-layers, the crystallization time over the range from 565 to 645°C appears to be weakly activated with an energy of 0.6 eV.


1998 ◽  
Vol 313-314 ◽  
pp. 469-473 ◽  
Author(s):  
Joohyun Koh ◽  
H. Fujiwara ◽  
Yiwei Lu ◽  
C.R. Wronski ◽  
R.W. Collins

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