Real time spectroscopic ellipsometry study of hydrogenated amorphous silicon p‐i‐n solar cells: Characterization of microstructural evolution and optical gaps

1995 ◽  
Vol 67 (18) ◽  
pp. 2669-2671 ◽  
Author(s):  
Joohyun Koh ◽  
Yiwei Lu ◽  
Sangbo Kim ◽  
J. S. Burnham ◽  
C. R. Wronski ◽  
...  
Keyword(s):  
Solar Cells ◽  
Amorphous Silicon ◽  
Real Time ◽  
Microstructural Evolution ◽  
Spectroscopic Ellipsometry ◽  
Hydrogenated Amorphous Silicon ◽  
Hydrogenated Amorphous

Spectroscopic Ellipsometry Characterization of Hydrogenated Amorphous Silicon Thin Film

2013 ◽  
Vol 33 (10) ◽  
pp. 1031001
Author(s):  
何剑 He Jian ◽  
李伟 Li Wei ◽  
徐睿 Xu Rui ◽  
郭安然 Guo Anran ◽  
祁康成 Qi Kangcheng ◽  
...  
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Spectroscopic Ellipsometry ◽  
Hydrogenated Amorphous Silicon ◽  
Silicon Thin Film ◽  
Hydrogenated Amorphous

Characterization of the Bulk Recombination in Hydrogenated Amorphous Silicon Solar Cells

2004 ◽  
Vol 808 ◽  
Author(s):  
J. Deng ◽  
J.M. Pearce ◽  
V. Vlahos ◽  
R.W. Collins ◽  
C.R. Wronski
Keyword(s):  
Solar Cells ◽  
Amorphous Silicon ◽  
Forward Bias ◽  
Hydrogenated Amorphous Silicon ◽  
Quality Factors ◽  
Defect States ◽  
Cell Structures ◽  
Staebler Wronski Effect ◽  
Hydrogenated Amorphous

ABSTRACTDark forward bias current, JD-V, characteristics offer a probe for characterizing carrier recombination and the defect states in the intrinsic layers of hydrogenated amorphous silicon (a-Si:H) solar cells. Detailed studies were carried out on such characteristics for the cells with optimized p/i interfaces and high quality i-layers in which the current transport is bulk recombination dominated. It was found that the diode quality factor n is not a constant with bias voltages as has been generally considered. Instead, it can be best described through the bias dependent differential diode quality factors, n(V) = [kT/q]−1[d(lnJD)/dV]−1, whose magnitude and shape reflect the gap state distribution in the corresponding bulk i-layers. The n(V) characteristics obtained on cell structures with both hydrogen diluted and undiluted i-layers have been utilized in characterizing the differences in the distribution of defect states in the two i-layers both in annealed state as well as after creating light induced defects. In the characterization of the Staebler-Wronski Effect (SWE) using JD-V characteristics, a newphenomenon is observed – relaxation of light induced defect states created by 1 sun illumination at 25°C, which is also found in the follow-on studies on the photo-conductivities of corresponding thin films.

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