Epitaxy of Au on Ag(111) Studied by High-Energy Ion Scattering

1981 ◽  
Vol 47 (9) ◽  
pp. 657-660 ◽  
Author(s):  
R. J. Culbertson ◽  
L. C. Feldman ◽  
P. J. Silverman ◽  
H. Boehm
Keyword(s):  
1995 ◽  
Vol 399 ◽  
Author(s):  
R.J. Smith ◽  
Adli A. Saleh ◽  
V. Shutthanandan ◽  
N.R. Shivaparan ◽  
V. Krasemann

ABSTRACTThe growth of thin Pd, Ni, Fe and Ti films on Al(110) surfaces has been studied using high-energy ion scattering (HEIS), x-ray photoemission spectroscopy and photoelectron diffraction techniques. Of these four metals, only Ti grows as an epitaxial overlayer, while the other metals mix with the substrate to form surface alloys. In the HEIS experiments the backscattered ion yield from Al surface atoms is measured as a function of metal coverage on the Al surface. A decrease in the Al scattering is observed for Ti deposition while the other metals result in increased Al scattering, attributed to alloy formation. An explanation for the exceptional growth behavior of Ti on Al is provided using a model of surface strain associated with aluminide formation.


1982 ◽  
Vol 114 (1) ◽  
pp. 331-348 ◽  
Author(s):  
T. Narusawa ◽  
W.M. Gibson ◽  
E. Törnqvist

1994 ◽  
Vol 49 (23) ◽  
pp. 16789-16792 ◽  
Author(s):  
H. Dürr ◽  
D. B. Poker ◽  
D. M. Zehner ◽  
J. H. Barrett
Keyword(s):  

1992 ◽  
Vol 70 (10-11) ◽  
pp. 1043-1049 ◽  
Author(s):  
D. Comedi ◽  
G. Balcaitis ◽  
B.J. Robinson ◽  
D. A. Thompson

Commercially available (001) InP substrates have been treated by exposure to UV/ozone to produce surface oxide layers suitable for thermal desorption prior to epitaxial growth. Thermally induced changes in composition and structure of the oxidized surfaces in vacuum have been studied using Auger electron spectroscopy (AES), reflection high-energy electron diffraction (RHEED), and Rutherford backscattering/channeling (RBSC). It is found that for temperatures above 440–450 °C the oxide becomes unstable. Thermal oxide desorption in vacuum above 460 °C always results in a P-depleted surface. At 460 °C the oxide can be thermally removed without noticeable P loss; however, the time requried for this process is approximately 2 h. Time-dependent AES results for oxide desorbing at a fixed temperature can be described by assuming a thinning process with a constant thinning rate for short annealing times; however, for longer times the desorption rate increases considerably. After complete oxide removal, the resulting clean (001) InP surface shows a 2 × 1 RHEED pattern, while the corresponding measured In surface peak intensity as measured by RBSC is close to that obtained for a clean MBE grown surface. Significant structural deterioration of the surface is detected at high temperatures (≈ 495 °C) by RHEED nad RBSC. The average O/In composition ratio of the oxide layer has been determined by ion scattering methods.


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