Zero-Bias Noise as a Measure of Free-Carrier Energy Relaxation in Photoconductors

1971 ◽  
Vol 27 (11) ◽  
pp. 733-735
Author(s):  
J. C. Shelton ◽  
A. T. Forrester
Keyword(s):  
Energy Relaxation ◽  
Free Carrier ◽  
Zero Bias ◽  
Carrier Energy

Model thermodynamics and the role of free-carrier energy at high temperatures: Nitrogen and boron pairing in diamond

2009 ◽  
Vol 80 (5) ◽  
Author(s):  
R. M. MacLeod ◽  
S. W. Murray ◽  
J. P. Goss ◽  
P. R. Briddon ◽  
R. J. Eyre
Keyword(s):  
High Temperatures ◽  
Free Carrier ◽  
Carrier Energy

Effect of hot-carrier energy relaxation on main properties of collapsing field domains in avalanching GaAs

2015 ◽  
Vol 106 (18) ◽  
pp. 183505 ◽  
Author(s):  
V. Palankovski ◽  
S. Vainshtein ◽  
V. Yuferev ◽  
J. Kostamovaara ◽  
V. Egorkin
Keyword(s):  
Energy Relaxation ◽  
Hot Carrier ◽  
Carrier Energy

Hot Carrier Energy and Energy Relaxation Length in a-Se Photoconductive Target

2013 ◽  
Vol 787 ◽  
pp. 333-336 ◽  
Author(s):  
Wug Dong Park ◽  
Kenkichi Tanioka
Keyword(s):  
Electric Field ◽  
High Gain ◽  
Energy Relaxation ◽  
Threshold Field ◽  
Multiplication Factor ◽  
Avalanche Multiplication ◽  
Relaxation Length ◽  
Hot Carrier ◽  
Drift Model ◽  
Carrier Energy

The a-Se HARP (High-gain Avalanche Rushing amorphous Photoconductor) target was prepared, and the avalanche characteristics were investigated. In this paper, to study avalanche multiplication at a high electric field, the lucky-drift model was used. In addition, the energy-and field-dependent energy relaxation length was considered. The avalanche multiplication factor was obtained from the current-voltage characteristic of the a-Se HARP target. The threshold field of the 0.4-μm-thick a-Se HARP target was 0.88×108V/m. The hot carrier energy at the threshold field for the avalanche multiplication in the 0.4-μm-thick a-Se HARP target was 0.21 eV. The hot carrier energy in the a-Se layer increases linearly as the electric field increases. The hot carrier energy also saturates as the avalanche multiplication factor increases. In addition, the energy relaxation length between the inelastic scattering events in the a-Se layer saturates as the hot carrier energy and the avalanche multiplication factor increase.

Analysis on carrier energy relaxation in superlattices and its implications on the design of hot carrier solar cell absorbers

2012 ◽  
Author(s):  
Y. Feng ◽  
P. Aliberti ◽  
R. J. Patterson ◽  
B. P. Veettil ◽  
S. Lin ◽  
...  
Keyword(s):  
Solar Cell ◽  
Energy Relaxation ◽  
Hot Carrier ◽  
Carrier Energy

The effect of jumps into distant sites on carrier energy relaxation in a disordered hopping system

1999 ◽  
Vol 11 (12) ◽  
pp. 2531-2538
Author(s):  
V I Arkhipov ◽  
E V Emelianova ◽  
G J Adriaenssens
Keyword(s):  
Energy Relaxation ◽  
Carrier Energy

Finite time of carrier energy relaxation as a cause of optical-power limitation in semiconductor lasers

2006 ◽  
Vol 40 (8) ◽  
pp. 990-995 ◽  
Author(s):  
S. O. Slipchenko ◽  
Z. N. Sokolova ◽  
N. A. Pikhtin ◽  
K. S. Borschev ◽  
D. A. Vinokurov ◽  
...  
Keyword(s):  
Semiconductor Lasers ◽  
Finite Time ◽  
Optical Power ◽  
Energy Relaxation ◽  
Carrier Energy
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