Analysis on carrier energy relaxation in superlattices and its implications on the design of hot carrier solar cell absorbers

2012 ◽  
Author(s):  
Y. Feng ◽  
P. Aliberti ◽  
R. J. Patterson ◽  
B. P. Veettil ◽  
S. Lin ◽  
...  
Keyword(s):  
Solar Cell ◽  
Energy Relaxation ◽  
Hot Carrier ◽  
Carrier Energy

Effect of hot-carrier energy relaxation on main properties of collapsing field domains in avalanching GaAs

2015 ◽  
Vol 106 (18) ◽  
pp. 183505 ◽  
Author(s):  
V. Palankovski ◽  
S. Vainshtein ◽  
V. Yuferev ◽  
J. Kostamovaara ◽  
V. Egorkin
Keyword(s):  
Energy Relaxation ◽  
Hot Carrier ◽  
Carrier Energy

Hot Carrier Energy and Energy Relaxation Length in a-Se Photoconductive Target

2013 ◽  
Vol 787 ◽  
pp. 333-336 ◽  
Author(s):  
Wug Dong Park ◽  
Kenkichi Tanioka
Keyword(s):  
Electric Field ◽  
High Gain ◽  
Energy Relaxation ◽  
Threshold Field ◽  
Multiplication Factor ◽  
Avalanche Multiplication ◽  
Relaxation Length ◽  
Hot Carrier ◽  
Drift Model ◽  
Carrier Energy

The a-Se HARP (High-gain Avalanche Rushing amorphous Photoconductor) target was prepared, and the avalanche characteristics were investigated. In this paper, to study avalanche multiplication at a high electric field, the lucky-drift model was used. In addition, the energy-and field-dependent energy relaxation length was considered. The avalanche multiplication factor was obtained from the current-voltage characteristic of the a-Se HARP target. The threshold field of the 0.4-μm-thick a-Se HARP target was 0.88×108V/m. The hot carrier energy at the threshold field for the avalanche multiplication in the 0.4-μm-thick a-Se HARP target was 0.21 eV. The hot carrier energy in the a-Se layer increases linearly as the electric field increases. The hot carrier energy also saturates as the avalanche multiplication factor increases. In addition, the energy relaxation length between the inelastic scattering events in the a-Se layer saturates as the hot carrier energy and the avalanche multiplication factor increase.

Reversing hot-carrier energy-relaxation in graphene with a magnetic field

2014 ◽  
Vol 104 (19) ◽  
pp. 193115 ◽  
Author(s):  
H. Ramamoorthy ◽  
R. Somphonsane ◽  
G. He ◽  
D. K. Ferry ◽  
J. P. Bird
Keyword(s):  
Magnetic Field ◽  
Energy Relaxation ◽  
Hot Carrier ◽  
Carrier Energy

Femtosecond hot‐carrier energy relaxation in GaAs

1987 ◽  
Vol 51 (18) ◽  
pp. 1442-1444 ◽  
Author(s):  
R. W. Schoenlein ◽  
W. Z. Lin ◽  
E. P. Ippen ◽  
J. G. Fujimoto
Keyword(s):  
Energy Relaxation ◽  
Hot Carrier ◽  
Carrier Energy

Valley Photovoltaics and the Search for the Hot Carrier Solar Cell

2020 ◽  
Author(s):  
David K. Ferry ◽  
Stephen M. Goodnick ◽  
Ian R. Sellers ◽  
Vincent R. Whiteside
Keyword(s):  
Solar Cell ◽  
Hot Carrier

Fundamental Aspects of Hot Carrier Solar Cell Operation

2020 ◽  
Author(s):  
Andreas Pusch ◽  
Milos Dubajic ◽  
Nicholas J. Ekins-Daukes ◽  
Stephen Bremner
Keyword(s):  
Solar Cell ◽  
Hot Carrier

Determining plasmonic hot-carrier energy distributions via single-molecule transport measurements

Science ◽  
2020 ◽  
pp. eabb3457 ◽  
Author(s):  
Harsha Reddy ◽  
Kun Wang ◽  
Zhaxylyk Kudyshev ◽  
Linxiao Zhu ◽  
Shen Yan ◽  
...  
Keyword(s):  
Single Molecule ◽  
Plasmonic Nanostructures ◽  
Hot Carriers ◽  
Energy Distributions ◽  
Nanoscale Systems ◽  
Hot Carrier ◽  
Transport Measurements ◽  
Single Molecule Junctions ◽  
Molecule Transport ◽  
Carrier Energy

Hot-carriers in plasmonic nanostructures, generated via plasmon decay, play key roles in applications like photocatalysis and in photodetectors that circumvent band-gap limitations. However, direct experimental quantification of steady-state energy distributions of hot-carriers in nanostructures has so far been lacking. We present transport measurements from single-molecule junctions, created by trapping suitably chosen single molecules between an ultra-thin gold film supporting surface plasmon polaritons and a scanning probe tip, that can provide quantification of plasmonic hot-carrier distributions. Our results show that Landau damping is the dominant physical mechanism of hot-carrier generation in nanoscale systems with strong confinement. The technique developed in this work will enable quantification of plasmonic hot-carrier distributions in nanophotonic and plasmonic devices.

FEMTOSECOND HOT CARRIER ENERGY REDISTRIBUTION IN GaAs AND AlGaAs

1988 ◽  
pp. 443-446
Author(s):  
R.W. Schoenlein ◽  
W.Z. Lin ◽  
S.D. Brorson ◽  
E.P. Ippen ◽  
J.G. Fujimoto
Keyword(s):  
Energy Redistribution ◽  
Hot Carrier ◽  
Carrier Energy
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