scholarly journals Anisotropic Step Stiffness from a Kinetic Model of Epitaxial Growth

2008 ◽  
Vol 7 (1) ◽  
pp. 242-273 ◽  
Author(s):  
Dionisios Margetis ◽  
Russel E. Caflisch
Keyword(s):  
Kinetic Model ◽  
Epitaxial Growth

Kinetic model for a step edge in epitaxial growth

1999 ◽  
Vol 59 (6) ◽  
pp. 6879-6887 ◽  
Author(s):  
Russel E. Caflisch ◽  
Weinan E ◽  
Mark F. Gyure ◽  
Barry Merriman ◽  
Christian Ratsch
Keyword(s):  
Kinetic Model ◽  
Epitaxial Growth ◽  
Step Edge

Theoretical Monte Carlo Study of the Formation and Evolution of Defects in the Homoepitaxial Growth of SiC

2008 ◽  
Vol 600-603 ◽  
pp. 135-138 ◽  
Author(s):  
Massimo Camarda ◽  
Antonino La Magna ◽  
Patrick Fiorenza ◽  
Gaetano Izzo ◽  
Francesco La Via
Keyword(s):  
Growth Rate ◽  
Monte Carlo ◽  
Kinetic Model ◽  
Epitaxial Growth ◽  
Defect Formation ◽  
Monte Carlo Study ◽  
Optical Characterization ◽  
Extended Defects ◽  
Homoepitaxial Growth ◽  
Formation And Evolution

A novel Monte Carlo kinetic model has been developed and implemented to predict growth rate regimes and defect formation for the homo-epitaxial growth of various SiC polytypes on different substrates. Using this model we have studied the generation of both point like and extended defects in terms of the growth rate and off-cut angle, finding qualitative agreement with both electrical and optical characterization and analytical results.

scholarly journals Kinetic Model of SiGe Selective Epitaxial Growth using RPCVD Technique

2011 ◽  
Vol 158 (4) ◽  
pp. H457 ◽  
Author(s):  
M. Kolahdouz ◽  
L. Maresca ◽  
R. Ghandi ◽  
A. Khatibi ◽  
H. H. Radamson
Keyword(s):  
Kinetic Model ◽  
Epitaxial Growth ◽  
Selective Epitaxial Growth

scholarly journals Kinetic Model of SiGe Selective Epitaxial Growth Using RPCVD Technique

2019 ◽  
Vol 33 (6) ◽  
pp. 581-593 ◽  
Author(s):  
Mohammadreza Kolahdouz ◽  
Luca Maresca ◽  
Reza Ghandi ◽  
Ali Khatibi ◽  
Henry H. Radamson
Keyword(s):  
Kinetic Model ◽  
Epitaxial Growth ◽  
Selective Epitaxial Growth

Direct Observations of the Epitaxial Growth of Sputtered Ag on Si

1973 ◽  
Vol 31 ◽  
pp. 122-123
Author(s):  
J. S. Maa ◽  
Thos. E. Hutchinson
Keyword(s):  
Epitaxial Growth ◽  
Film Growth ◽  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Microscopy Technique ◽  
Direct Observations ◽  
In Situ Electron Microscopy ◽  
Beam Sputtering ◽  
The Subject

The growth of Ag films deposited on various substrate materials such as MoS2, mica, graphite, and MgO has been investigated extensively using the in situ electron microscopy technique. The three stages of film growth, namely, the nucleation, growth of islands followed by liquid-like coalescence have been observed in both the vacuum vapor deposited and ion beam sputtered thin films. The mechanisms of nucleation and growth of silver films formed by ion beam sputtering on the (111) plane of silicon comprise the subject of this paper. A novel mode of epitaxial growth is observed to that seen previously.The experimental arrangement for the present study is the same as previous experiments, and the preparation procedure for obtaining thin silicon substrate is presented in a separate paper.

Electron Energy Analysis of Germanium and Silica Layers on Silicon Substrates

1975 ◽  
Vol 33 ◽  
pp. 96-97
Author(s):  
R. W. Ditchfield ◽  
A. G. Cullis
Keyword(s):  
Epitaxial Growth ◽  
Electron Energy ◽  
Silicon Substrates ◽  
Secondary Phases ◽  
Si Substrates ◽  
Transmission Electron ◽  
Layer Structures ◽  
Si Films ◽  
Electron Energy Loss ◽  
Growth Centres

An energy analyzing transmission electron microscope of the Möllenstedt type was used to measure the electron energy loss spectra given by various layer structures to a spatial resolution of 100Å. The technique is an important, method of microanalysis and has been used to identify secondary phases in alloys and impurity particles incorporated into epitaxial Si films.Layers Formed by the Epitaxial Growth of Ge on Si Substrates Following studies of the epitaxial growth of Ge on (111) Si substrates by vacuum evaporation, it was important to investigate the possible mixing of these two elements in the grown layers. These layers consisted of separate growth centres which were often triangular and oriented in the same sense, as shown in Fig. 1.

AEM of reaction-bonded SiC

1992 ◽  
Vol 50 (1) ◽  
pp. 344-345
Author(s):  
K Das Chowdhury ◽  
R. W. Carpenter ◽  
W. Braue
Keyword(s):  
Mechanical Properties ◽  
Phase Transformation ◽  
High Temperature ◽  
Epitaxial Growth ◽  
Liquid Silicon ◽  
Structural Ceramic ◽  
Few Data

Research on reaction-bonded SiC (RBSiC) is aimed at developing a reliable structural ceramic with improved mechanical properties. The starting materials for RBSiC were Si,C and α-SiC powder. The formation of the complex microstructure of RBSiC involves (i) solution of carbon in liquid silicon, (ii) nucleation and epitaxial growth of secondary β-SiC on the original α-SiC grains followed by (iii) β>α-SiC phase transformation of newly formed SiC. Due to their coherent nature, epitaxial SiC/SiC interfaces are considered to be segregation-free and “strong” with respect to their effect on the mechanical properties of RBSiC. But the “weak” Si/SiC interface limits its use in high temperature situations. However, few data exist on the structure and chemistry of these interfaces. Microanalytical results obtained by parallel EELS and HREM imaging are reported here.

Sign in / Sign up

Export Citation Format

Share Document