Time-resolved shear transformations in the transient plastic regime of sheared amorphous silicon

2020 ◽  
Vol 102 (5) ◽  
Author(s):  
Tristan Albaret ◽  
Francesca Boioli ◽  
David Rodney
Keyword(s):  
Amorphous Silicon ◽  
Time Resolved ◽  
Plastic Regime

Excimer Laser Amorphous Silicon Film Crystallization: A Study of Time Resolved Reflectivity Measurements

1993 ◽  
Vol 297 ◽  
Author(s):  
C. Summonte ◽  
M. Bianconi ◽  
D. Govoni
Keyword(s):  
Heat Flow ◽  
Amorphous Silicon ◽  
Silicon Film ◽  
Optical Simulation ◽  
Molten Layer ◽  
Time Resolved ◽  
Flow Calculation ◽  
Explosive Crystallization ◽  
Bulk Nucleation ◽  
Calculation Results

Time Resolved Reflectivity during XeCl pulsed laser irradiation of amorphous silicon films deposited on glass was measured. Simulation of the process by a Heat Flow Calculation in which explosive crystallization was not forced to occur, predicts the coexistence of partial bulk nucleation and a traveling molten layer. Optical simulation of Time Resolved Reflectivity was used to critically examine the Heat Flow Calculation results, substantially confirming the existence of a mixture of thermodynamical phases.

Time-resolved reflectance studies of silicon during laser thermal processing of amorphous silicon gates on ultrathin gate oxides

2004 ◽  
Vol 95 (11) ◽  
pp. 6048-6053 ◽  
Author(s):  
Y. F. Chong ◽  
H.-J. L. Gossmann ◽  
M. O. Thompson ◽  
S. Yang ◽  
K. L. Pey ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Thermal Processing ◽  
Gate Oxides ◽  
Time Resolved ◽  
Laser Thermal Processing

Effect of Plasma Modulation in the Glow Discharge Deposition of Amorphous Silicon Films

1990 ◽  
Vol 204 ◽  
Author(s):  
G. Bruno ◽  
P. Capezzuto ◽  
G. Cicala ◽  
P. Manodoro
Keyword(s):  
Amorphous Silicon ◽  
Material Properties ◽  
Silicon Germanium ◽  
Optical Emission Spectroscopy ◽  
Plasma Deposition ◽  
Optical Emission ◽  
Time Resolved ◽  
Formation Kinetics ◽  
Phase Characterization ◽  
Emitting Species

ABSTRACTThe plasma deposition of hydrogenated and fluorinated amorphous silicon (a-Si:H,F) and silicon-germanium alloys (a-Si,Ge:H,F) from SiF4-H2 and SiF 4-GeH 4-H2 mixtures, respectively, has been studied in continuous (CW) and modulated wave (MW) r.f. discharges. It has been found that the period and duty cycle of the modulated wave strongly affect the plasma composition, the surface homogeneity and the material properties. The plasma-phase characterization, performed by time resolved optical emission spectroscopy (TR-OES), supplies arguments on the origin of emitting species and on their formation kinetics. It has been found that H* and SiFx are formed by a direct electron impact process involving the same species in the ground state. In addition, the surface homogeneity and some material properties are strongly improved by plasma modulation.

Transport Properties of Amorphous Silicon / Silicon Oxide Heterostructures

1986 ◽  
Vol 70 ◽  
Author(s):  
H. Steemers ◽  
J. Mort ◽  
I. Chen ◽  
F. Jansen ◽  
S. Grammatica ◽  
...  
Keyword(s):  
Glow Discharge ◽  
Amorphous Silicon ◽  
Room Temperature ◽  
Silicon Oxide ◽  
Transport Model ◽  
Electron Lifetime ◽  
Defect States ◽  
Time Resolved ◽  
Oxide Heterostructures ◽  
Silicon Silicon

ABSTRACTThe transport of excess carriers in glow-discharge deposited a-Si:H/insulator heterostructures has been studied by time-of-flight and xerographic discharge techniques. Efficient injection of photocarriers from a-Si:H into, and transport through, relatively thick SiOx:N:H has been achieved. A mobility-lifetime product approaching 18−6 cm2V−1 is found for electrons in SiOx:N:H, and time resolved measurements indicate a room temperature mobility of 5×10−6 cm2v−1s−1 at a field of 2×104 Vcm−1, suggesting an electron lifetime of the order of 8.2 seconds. The results are contrasted with transport measurements on thermally grown SiO2 on Si and a transport model involving hopping through defect states within the gap of SiOx:N:H is discussed.

Applications of an amorphous silicon-based area detector for high-resolution, high-sensitivity and fast time-resolved pair distribution function measurements

2007 ◽  
Vol 40 (3) ◽  
pp. 463-470 ◽  
Author(s):  
Peter J. Chupas ◽  
Karena W. Chapman ◽  
Peter L. Lee
Keyword(s):  
Distribution Function ◽  
Amorphous Silicon ◽  
Pair Distribution Function ◽  
High Sensitivity ◽  
High Energy ◽  
Scattering Data ◽  
Fast Time ◽  
Large Area ◽  
Nickel Metal ◽  
Time Resolved

The application of a large-area (41 × 41 cm, 2048 × 2048 or 1024 × 1024 pixel) high-sensitivity (detective quantum efficiency > 65%) fast-readout (up to 7.5 or 30 Hz) flat-panel detector based on an amorphous silicon array system to the collection of high-energy X-ray scattering data for quantitative pair distribution function (PDF) analysis is evaluated and discussed. Data were collected over a range of exposure times (0.13 s–7 min) for benchmark PDF samples: crystalline nickel metal and amorphous silica (SiO2). The high real-space resolution of the resultant PDFs (withQmaxup to ∼40 Å−1) and the high quality of fits to data [RNi(0.13s)= 10.5%,RNi(1.3s)= 6.3%] obtained in short measurement times indicate that this detector is well suited to studies of materials disorder. Further applications of the detector to locate weakly scattering H2molecules within the porous Prussian blue system, {\rm Mn}^{\rm II}_{\,3}[CoIII(CN)6]2·xH2, and to follow thein situreduction of PtIVO2to Pt0at 30 Hz, confirm the high sensitivity of the detector and demonstrate a new potential for fast time-resolved studies.

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