scholarly journals Kinetics of the laser-induced solid phase crystallization of amorphous silicon—Time-resolved Raman spectroscopy and computer simulations

2017 ◽  
Vol 392 ◽  
pp. 867-871 ◽  
Author(s):  
J. Očenášek ◽  
P. Novák ◽  
L. Prušáková
Keyword(s):  
Raman Spectroscopy ◽  
Amorphous Silicon ◽  
Computer Simulations ◽  
Solid Phase ◽  
Solid Phase Crystallization ◽  
Time Resolved ◽  
Kinetics Of

Kinetics and Mechanisms of Solid Phase Epitaxy and Competitive Processes in Silicon

1984 ◽  
Vol 35 ◽  
Author(s):  
G.L. Olson
Keyword(s):  
Amorphous Silicon ◽  
Epitaxial Growth ◽  
Recent Progress ◽  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Temperature Dependent ◽  
Solid Phase Crystallization ◽  
Induced Changes ◽  
Kinetics Of ◽  
Very High

ABSTRACTRecent progress in studies of temperature dependent kinetic competition during solid phase crystallization of silicon is reviewed. Specific areas which are emphasized include: the enhancement of solid phase epitaxial growth rates by impurity-induced changes in electronic properties at the crystal/amorphous interface, the influence of impurity diffusion and precipitation in amorphous silicon on the kinetics of epitaxial growth, the effects of impurities on the kinetic competition between solid phase epitaxy and random crystallization, and the kinetics of solid phase crystallization at very high temperatures in silicon.

Combinatorial Studies of Switching and Solid-Phase Crystallization in Amorphous Silicon

2005 ◽  
Vol 894 ◽  
Author(s):  
Paul Stradins ◽  
Howard M. Branz ◽  
Jian Hu ◽  
Scott Ward ◽  
Qi Wang
Keyword(s):  
Thin Film ◽  
Film Thickness ◽  
Amorphous Silicon ◽  
Solid Phase ◽  
Reverse Current ◽  
Solid Phase Epitaxy ◽  
Solid Phase Crystallization ◽  
Metallic Contacts ◽  
Image Monitoring ◽  
Kinetics Of

AbstractCombinatorial approaches are successfully applied for the optimization of electric write-once, thin-film Si antifuse memory devices, as well as for studying the solid-phase epitaxy kinetics of amorphous silicon on c-Si. High forward, low reverse current thin film Si diode deposition recipes are selected using cross-strips of different combinations of amorphous and microcrystalline doped layers, as well as a thickness-wedged intrinsic a-Si:H buffer layer. By studying switching in thickness-wedged a-Si:H layers, it is found that switching requires both a critical field and a critical bias voltage across the metallic contacts. Solid-phase epitaxy speed has a non-linear dependence on the film thickness, which is easily observed by optical image monitoring and analysis in wedged a-Si:H films on c-Si wafers.

Laser-Induced Solid Phase Crystallization in Amorphous Silicon Films

1982 ◽  
Vol 13 ◽  
Author(s):  
G.L. Olson ◽  
S.A. Kokorowski ◽  
J.A. Roth ◽  
L.D. Hess
Keyword(s):  
Solid Phase ◽  
Solubility Limit ◽  
State Theory ◽  
Solid Phase Crystallization ◽  
Solid Solubility Limit ◽  
Time Resolved ◽  
Impurity Atoms ◽  
Intrinsic Kinetics ◽  
Dopant Atoms ◽  
Kinetics Of

ABSTRACTWe review recent work on the kinetics of laser-induced solid phase epitaxial crystallization of silicon as determined from time-resolved reflectivity measurements. Specific topics which are addressed include: the intrinsic kinetics of solid phase epitaxy (SPE) in ion-implanted and UHV-deposited films; SPE rate enhancement by implanted dopant atoms and the effects of electrical compensation on the SPE rate; and the temperature dependence of SPE and competing processes in samples containing impurity atoms at concentrations exceeding the solid solubility limit. The high temperature kinetics results are compared with predictions from transition state theory and are discussed with respect to a proposed depression in the amorphous Si melting temperature.

Solute Segregation and Dynamics of Solid-Phase Crystallization In in and Sb-Implanted Silicon

1981 ◽  
Vol 4 ◽  
Author(s):  
J. Narayan ◽  
G. L. Olson ◽  
O. W. Holland
Keyword(s):  
Laser Power ◽  
Solid Phase ◽  
Solute Segregation ◽  
Dislocation Loops ◽  
Solid Phase Crystallization ◽  
Time Resolved ◽  
Plan View ◽  
Ion Channeling ◽  
Retrograde Solubility ◽  
Transmission Electron

ABSTRACTTime-resolved-reflectivity measurements have been combined with transmission electron microscopy (cross-section and plan-view), Rutherford backscattering and ion channeling techniques to study the details of laser induced solid phase epitaxial growth in In+ and Sb+ implanted silicon in the temperature range from 725 to 1500 °K. The details of microstructures including the formation of polycrystals, precipitates, and dislocations have been correlated with the dynamics of crystallization. There were limits to the dopant concentrations which could be incorporated into substitutional lattice sites; these concentrations exceeded retrograde solubility limits by factors up to 70 in the case of the Si-In system. The coarsening of dislocation loops and the formation of a/2<110>, 90° dislocations in the underlying dislocation-loop bands are described as a function of laser power.

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