scholarly journals Examination of the influence of transfer channels on the barrier height distribution: Scattering ofNe20onNi58,Ni60, andNi61at near-barrier energies

2016 ◽  
Vol 93 (5) ◽  
Author(s):  
A. Trzcińska ◽  
E. Piasecki ◽  
A. Amar ◽  
W. Czarnacki ◽  
N. Keeley ◽  
...  
Keyword(s):  
Barrier Height ◽  
Height Distribution ◽  
Transfer Channels

A BEEM study of the temperature dependence of the barrier height distribution in PtSi/n-Si Schottky diodes

1999 ◽  
Vol 112 (11) ◽  
pp. 611-615 ◽  
Author(s):  
S. Zhu ◽  
R.L. Van Meirhaeghe ◽  
C. Detavernier ◽  
G.-P. Ru ◽  
B.-Z. Li ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Barrier Height ◽  
Schottky Diodes ◽  
Height Distribution

Phase transition induced double-Gaussian barrier height distribution in Schottky diode

2013 ◽  
Vol 431 ◽  
pp. 6-10 ◽  
Author(s):  
A. Bobby ◽  
S. Verma ◽  
K. Asokan ◽  
P.M. Sarun ◽  
B.K. Antony
Keyword(s):  
Phase Transition ◽  
Barrier Height ◽  
Schottky Diode ◽  
Height Distribution

scholarly journals Measure and analysis of 4H-SiC Schottky barrier height with Mo contacts

2019 ◽  
Vol 85 (1) ◽  
pp. 10102 ◽  
Author(s):  
Teng Zhang ◽  
Christophe Raynaud ◽  
Dominique Planson
Keyword(s):  
Barrier Height ◽  
Deep Level ◽  
Schottky Contact ◽  
Thermionic Emission ◽  
Distribution Model ◽  
Emission Model ◽  
Height Distribution ◽  
Current Voltage ◽  
Transient Spectroscopy ◽  
Fluctuation Model

Current–voltage (I–V) and capacitance–voltage (C–V) characteristics of Schottky Mo/4H-SiC diodes have been measured and analyzed as a function of temperature between 80 and 400 K. The I–V characteristics significantly deviate from ideal characteristics predicted by the thermionic emission model because of the inhomogeneity of Schottky contact. After a brief review of the different existing models, the main parameters (ideality factor, barrier height, and effective Richardson constant) of both diodes have been extracted in the frame of a Gaussian barrier height distribution model, whose mean and standard deviation are linearly dependent on voltage and temperature, as well as in the context of the potential fluctuation model. The results are compared with the values extracted by C–V and the values in the literature. A link is established between these two models. Diodes of different I–V  characteristics, either identified as single barrier or double barrier, have been analyzed by Deep Level Transient Spectroscopy (DLTS) to investigate the deep level defects present. No noticeable difference has been found.

Influence of barrier height distribution on the parameters of Schottky diodes

1994 ◽  
Vol 65 (5) ◽  
pp. 575-577 ◽  
Author(s):  
Edmund Dobročka ◽  
Jozef Osvald
Keyword(s):  
Barrier Height ◽  
Schottky Diodes ◽  
Height Distribution
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