The barrier height distribution in identically prepared Al/p-Si Schottky diodes with the native interfacial insulator layer (SiO2)

2007 ◽  
Vol 399 (2) ◽  
pp. 146-154 ◽  
Author(s):  
Ş. Altındal ◽  
H. Kanbur ◽  
A. Tataroğlu ◽  
M.M. Bülbül
Keyword(s):  
Barrier Height ◽  
Schottky Diodes ◽  
Height Distribution ◽  
Insulator Layer

A BEEM study of the temperature dependence of the barrier height distribution in PtSi/n-Si Schottky diodes

1999 ◽  
Vol 112 (11) ◽  
pp. 611-615 ◽  
Author(s):  
S. Zhu ◽  
R.L. Van Meirhaeghe ◽  
C. Detavernier ◽  
G.-P. Ru ◽  
B.-Z. Li ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Barrier Height ◽  
Schottky Diodes ◽  
Height Distribution

Pt/n-GaN metal-semiconductor and Pt/HfO2/n-GaN metal-insulator-semiconductor Schottky diodes

2014 ◽  
Vol 1736 ◽  
Author(s):  
Arjun Shetty ◽  
Basanta Roul ◽  
Shruti Mukundan ◽  
Greeshma Chandan ◽  
Lokesh Mohan ◽  
...  
Keyword(s):  
Barrier Height ◽  
Ideality Factor ◽  
Schottky Diodes ◽  
Reverse Current ◽  
X Ray Diffraction ◽  
Insulator Layer ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Sapphire Substrates ◽  
Contact Metal

ABSTRACTGallium nitride (n-type) films of thickness 300nm were grown on c-plane sapphire substrates using plasma assisted molecular beam epitaxy (PA-MBE). High resolution X-ray diffraction and photoluminescence measurements were used to confirm the crystalline and optical qualities of the grown films. Metal-semiconductor Schottky diodes were fabricated using Pt as the Schottky metal and Al as the Ohmic metal contact. Metal-insulator-semiconductor Schottky diodes were also fabricated using HfO2 (10nm) as the insulator material. Diode parameters like barrier height and ideality factor were extracted from I-V measurements. Introduction of HfO2 as the insulator layer leads to better rectifying behavior (forward to reverse current ratio improves from 5.1 to 8.9) with a reduction in reverse leakage current (by 7.4 times), increase in barrier height (from 0.62eV to 0.74eV) and a reduction in ideality factor (from 6 to 4.1) of the Schottky diode.

Influence of barrier height distribution on the parameters of Schottky diodes

1994 ◽  
Vol 65 (5) ◽  
pp. 575-577 ◽  
Author(s):  
Edmund Dobročka ◽  
Jozef Osvald
Keyword(s):  
Barrier Height ◽  
Schottky Diodes ◽  
Height Distribution

The Electrical Characteristics of GaAs-MgO Interfaces of GaAs MIS Schottky Diodes

2015 ◽  
Vol 1118 ◽  
pp. 270-275 ◽  
Author(s):  
Xian Gao ◽  
Ji Long Tang ◽  
Dan Fang ◽  
Fang Chen ◽  
Shuang Peng Wang ◽  
...  
Keyword(s):  
Barrier Height ◽  
Schottky Diodes ◽  
Interface Layer ◽  
Experimental Result ◽  
Electrical Characteristics ◽  
Semiconductor Interface ◽  
Insulator Layer ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Mis Structures

Many researches pay attention to the metal-semiconductor interface barrier, due to its effect on device. Deliberate growing an interface layer to affect and improve the quality of device, especially metal-insulator-semiconductor (MIS) structures, arouses wide attention. In this paper, Be-doped GaAs was grown on substrate wafer by molecular beam epitaxy (MBE) on purpose before depositing insulator layer, and then MgO film as the dielectric interface layer of Au/GaAs were deposited using atomic layer deposition (ALD) method. The interface electrical characteristics of the metal-insulator-semiconductor (MIS) structures were investigated in detail. The barrier height and ideal factor of GaAs diode parameters were calculated by means of current-voltage (I-V) characteristics. Experimental result showed that along with the increasing of the doping content, the Schottky barrier height increasing, but the ideal factor decrease at first and then increase.

Barrier height inhomogeneity and its impact on (Al,In,Ga)N Schottky diodes

2016 ◽  
Vol 119 (6) ◽  
pp. 064501 ◽  
Author(s):  
Matthew A. Laurent ◽  
Geetak Gupta ◽  
Donald J. Suntrup ◽  
Steven P. DenBaars ◽  
Umesh K. Mishra
Keyword(s):  
Barrier Height ◽  
Schottky Diodes

Barrier height and current passage mechanisms in Schottky diodes based in Mn x Hg 1-x Te

2001 ◽  
Author(s):  
Andrey V. Markov ◽  
Oksana O. Bodnaruk ◽  
O. V. Lazareva ◽  
Sergey E. Ostapov ◽  
Ilary M. Rarenko ◽  
...  
Keyword(s):  
Barrier Height ◽  
Schottky Diodes ◽  
Current Passage

High Barrier Height n-GaN Schottky diodes with a barrier height of 1.3 eV by using sputtered copper metal

1999 ◽  
Vol 572 ◽  
Author(s):  
W. C. Lai ◽  
M. Yokoyama ◽  
C. Y. Chang ◽  
J. D. Guo ◽  
J. S. Tsang ◽  
...  
Keyword(s):  
Barrier Height ◽  
Vapor Deposition ◽  
Schottky Diodes ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Copper Metal ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

ABSTRACTCopper Schottky diodes on n-type GaN grown by metal-organic chemical vapor deposition were achieved and investigated. Ti/Al was used as the ohmic contact. The copper metal is deposited by the Sputter system. The barrier height was determined to be as high as (ΦB =1.13eV by current-voltage (I-V) method and corrected to be ΦB =1.35eV as considered the ideality factor, n, with the value of 1.2. By the capacitance-voltage (C-V) method, the barrier height is determined to be ΦB =1.41eV. Both results indicate that the sputtered copper metal is a high barrier height Schottky metal for n-type GaN.

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