Xenon in sodium Y zeolite. 2. Arrhenius relation, mechanism, and barrier height distribution for cage-to-cage diffusion

1993 ◽  
Vol 97 (15) ◽  
pp. 3849-3857 ◽  
Author(s):  
Subramanian Yashonath ◽  
Prakriteswar Santikary
Keyword(s):  
Barrier Height ◽  
Height Distribution ◽  
Y Zeolite ◽  
Arrhenius Relation ◽  
Cage Diffusion

A BEEM study of the temperature dependence of the barrier height distribution in PtSi/n-Si Schottky diodes

1999 ◽  
Vol 112 (11) ◽  
pp. 611-615 ◽  
Author(s):  
S. Zhu ◽  
R.L. Van Meirhaeghe ◽  
C. Detavernier ◽  
G.-P. Ru ◽  
B.-Z. Li ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Barrier Height ◽  
Schottky Diodes ◽  
Height Distribution

Phase transition induced double-Gaussian barrier height distribution in Schottky diode

2013 ◽  
Vol 431 ◽  
pp. 6-10 ◽  
Author(s):  
A. Bobby ◽  
S. Verma ◽  
K. Asokan ◽  
P.M. Sarun ◽  
B.K. Antony
Keyword(s):  
Phase Transition ◽  
Barrier Height ◽  
Schottky Diode ◽  
Height Distribution

scholarly journals Measure and analysis of 4H-SiC Schottky barrier height with Mo contacts

2019 ◽  
Vol 85 (1) ◽  
pp. 10102 ◽  
Author(s):  
Teng Zhang ◽  
Christophe Raynaud ◽  
Dominique Planson
Keyword(s):  
Barrier Height ◽  
Deep Level ◽  
Schottky Contact ◽  
Thermionic Emission ◽  
Distribution Model ◽  
Emission Model ◽  
Height Distribution ◽  
Current Voltage ◽  
Transient Spectroscopy ◽  
Fluctuation Model

Current–voltage (I–V) and capacitance–voltage (C–V) characteristics of Schottky Mo/4H-SiC diodes have been measured and analyzed as a function of temperature between 80 and 400 K. The I–V characteristics significantly deviate from ideal characteristics predicted by the thermionic emission model because of the inhomogeneity of Schottky contact. After a brief review of the different existing models, the main parameters (ideality factor, barrier height, and effective Richardson constant) of both diodes have been extracted in the frame of a Gaussian barrier height distribution model, whose mean and standard deviation are linearly dependent on voltage and temperature, as well as in the context of the potential fluctuation model. The results are compared with the values extracted by C–V and the values in the literature. A link is established between these two models. Diodes of different I–V  characteristics, either identified as single barrier or double barrier, have been analyzed by Deep Level Transient Spectroscopy (DLTS) to investigate the deep level defects present. No noticeable difference has been found.

Influence of barrier height distribution on the parameters of Schottky diodes

1994 ◽  
Vol 65 (5) ◽  
pp. 575-577 ◽  
Author(s):  
Edmund Dobročka ◽  
Jozef Osvald
Keyword(s):  
Barrier Height ◽  
Schottky Diodes ◽  
Height Distribution

Role of Oxygen Adatoms in Homoepitaxial Growth of Cu(001)

1998 ◽  
Vol 528 ◽  
Author(s):  
Masanori Yata ◽  
Herve Rouch ◽  
Keikichi Nakamura
Keyword(s):  
Exchange Rate ◽  
Transition Temperature ◽  
Barrier Height ◽  
Deposition Rate ◽  
Layer By Layer ◽  
Step Flow ◽  
Homoepitaxial Growth ◽  
Arrhenius Relation ◽  
Site Exchange

AbstractO atoms segregate to the surface during Cu homoepitaxial growth on Cu(001)-(2√2×√2)-O to retain the (2√2×√2) surface. The presence of an O adlayer on the Cu surface raises the barrier height for the surface diffusion of the Cu adatom and increases the transition temperature of the growth mode from step flow to layer by layer. The growth proceeds by site exchange between Cu adatoms and O atoms. The site-exchange rate competes with the Cu deposition rate. There exists a critical Cu deposition rate above which the O atoms can not exchange the sites with Cu adatoms. The critical Cu deposition rate obeys an Arrhenius relation and the active energy for the site-exchange is estimated at 0.66 eV.

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