scholarly journals Validation of the multinucleon transfer method for the determination of the fission barrier height

2019 ◽  
Vol 100 (1) ◽  
Author(s):  
K. R. Kean ◽  
K. Nishio ◽  
K. Hirose ◽  
M. J. Vermeulen ◽  
H. Makii ◽  
...  
Keyword(s):  
Barrier Height ◽  
Fission Barrier ◽  
Transfer Method

Accurate Determination of Barrier Height and Kinetics for the F + H2O → HF + OH Reaction

2013 ◽  
Vol 117 (36) ◽  
pp. 8864-8872 ◽  
Author(s):  
Thanh Lam Nguyen ◽  
Jun Li ◽  
Richard Dawes ◽  
John F. Stanton ◽  
Hua Guo
Keyword(s):  
Barrier Height ◽  
Accurate Determination

Metal - Gan Contact Technology

1998 ◽  
Vol 514 ◽  
Author(s):  
S. S. Lau
Keyword(s):  
Barrier Height ◽  
Carrier Transport ◽  
Ohmic Contacts ◽  
Accurate Determination ◽  
Surface Cleaning ◽  
Metal Contacts ◽  
Metal Thin Films ◽  
Ohmic Behavior ◽  
Metal Silicides

ABSTRACTIn this talk, we summarize the experimental results obtained on metal-GaN interactions in our laboratory. These interactions include the epitaxial growth of metal thin films on chemically cleaned GaN surfaces, metal silicides for Schottky contacts and metallization schemes for ohmic contacts. We found that many fcc and hcp metals can grow epitaxially on (0001) GaN surfaces at room temperature without in-situ surface cleaning. Metal silicide contacts (such as PtSi) may be more suitable for high temperature applications than elemental contacts, due to the thermal stability of silicides. The intrinsic mechanisms for ohmic behavior for various metal contacts are not well understood at present. More consistent barrier height values measured experimentally can shed light on this issue. Due to the defective nature of the GaN layers, carrier transport across the metal/GaN interface can be due to a number of transport mechanisms, thus making accurate determination of the barrier height difficult. In spite of these difficulties, it seems possible to draw certain general conclusions on the electrical behavior of metal contacts on n-GaN.

Determination of the barrier height of iridium with hydrogen-terminated single crystal diamond

2019 ◽  
Vol 9 (01) ◽  
pp. 165-169
Author(s):  
Yan-Feng Wang ◽  
Wei Wang ◽  
Xiaohui Chang ◽  
Juan Wang ◽  
Jiao Fu ◽  
...  
Keyword(s):  
Single Crystal ◽  
Barrier Height ◽  
Single Crystal Diamond ◽  
Image Position

Abstract

Electron spectro-microscopic determination of barrier height and spatial distribution of Au and Ag Schottky junctions on boron-doped diamond (001)

2014 ◽  
Vol 53 (5S1) ◽  
pp. 05FP03 ◽  
Author(s):  
Shozo Kono ◽  
Hideyuki Kodama ◽  
Kimiyoshi Ichikawa ◽  
Taro Yoshikawa ◽  
Tadashi Abukawa ◽  
...  
Keyword(s):  
Spatial Distribution ◽  
Barrier Height ◽  
Boron Doped Diamond ◽  
Boron Doped ◽  
Schottky Junctions

scholarly journals Determination of the laterally homogeneous barrier height of palladium Schottky barrier diodes on n-Ge (111)

2010 ◽  
Vol 13 (5-6) ◽  
pp. 371-375 ◽  
Author(s):  
A. Chawanda ◽  
K.T. Roro ◽  
F.D. Auret ◽  
W. Mtangi ◽  
C. Nyamhere ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Barrier Diodes

ROLE OF HIGHER MULTIPOLARITY DEFORMATIONS IN THE HEIGHT OF FISSION BARRIER OF A DEFORMED HEAVY NUCLEUS

2005 ◽  
Vol 14 (03) ◽  
pp. 409-415 ◽  
Author(s):  
A. SOBICZEWSKI ◽  
I. MUNTIAN
Keyword(s):  
Barrier Height ◽  
Heavy Nucleus ◽  
Fission Barrier ◽  
Axially Symmetric ◽  
Microscopic Approach ◽  
Deformed Nucleus

Role of higher-multipolarity deformations of a nucleus in its (static) fission-barrier height [Formula: see text] is studied. The study is done within a macroscopic-microscopic approach. A heavy deformed nucleus 250 Cf is taken for the analysis. It is found that, in the case of axially symmetric shapes, the inclusion of higher-multipolarity deformations increases [Formula: see text].

Determination of grain boundary barrier height and interface states by a focused laser beam

1983 ◽  
Vol 42 (3) ◽  
pp. 285-287 ◽  
Author(s):  
E. Poon ◽  
E. S. Yang ◽  
H. L. Evans ◽  
W. Hwang ◽  
R. M. Osgood
Keyword(s):  
Grain Boundary ◽  
Laser Beam ◽  
Barrier Height ◽  
Interface States ◽  
Grain Boundary Barrier

Semiclassical approach for determination of the intergranular energy barrier height in very-fine nanograins

2006 ◽  
Vol 89 (20) ◽  
pp. 203105
Author(s):  
V. Guidi ◽  
C. Malagù ◽  
G. Martinelli ◽  
S. Cozzolino ◽  
M. Padula
Keyword(s):  
Barrier Height ◽  
Energy Barrier ◽  
Semiclassical Approach
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