Semiclassical approach for determination of the intergranular energy barrier height in very-fine nanograins

2006 ◽  
Vol 89 (20) ◽  
pp. 203105
Author(s):  
V. Guidi ◽  
C. Malagù ◽  
G. Martinelli ◽  
S. Cozzolino ◽  
M. Padula
Keyword(s):  
Barrier Height ◽  
Energy Barrier ◽  
Semiclassical Approach

Improved rectification characteristics by engineering energy barrier height in TiOx-based RRAM

2021 ◽  
Vol 237 ◽  
pp. 111498
Author(s):  
Tae-Hyeon Kim ◽  
Sungjun Kim ◽  
Byung-Gook Park
Keyword(s):  
Barrier Height ◽  
Energy Barrier

Experimental determination of energy barrier to particle detachment

1992 ◽  
Vol 270 (8) ◽  
pp. 794-798 ◽  
Author(s):  
K. Gotoh ◽  
Y. Nakata ◽  
M. Tagawa
Keyword(s):  
Experimental Determination ◽  
Energy Barrier ◽  
Particle Detachment

The use of computerized peak deconvolution for determination of energy barrier to enantiomerization in dynamic gas chromatography

2000 ◽  
Vol 12 (12) ◽  
pp. 630-636 ◽  
Author(s):  
J. Krupc�k ◽  
P. Oswald ◽  
I. Sp�nik ◽  
P. M�jek ◽  
M. Bajdichov� ◽  
...  
Keyword(s):  
Gas Chromatography ◽  
Energy Barrier ◽  
Peak Deconvolution

Energy barrier height variations of Pd—Si Schottky diodes induced by deuterium

1983 ◽  
Vol 4 (4) ◽  
pp. 73-75 ◽  
Author(s):  
A. Diligenti ◽  
M. Stagi ◽  
V. Ciuti ◽  
M. Schiaffino
Keyword(s):  
Barrier Height ◽  
Energy Barrier ◽  
Schottky Diodes

Accurate Determination of Barrier Height and Kinetics for the F + H2O → HF + OH Reaction

2013 ◽  
Vol 117 (36) ◽  
pp. 8864-8872 ◽  
Author(s):  
Thanh Lam Nguyen ◽  
Jun Li ◽  
Richard Dawes ◽  
John F. Stanton ◽  
Hua Guo
Keyword(s):  
Barrier Height ◽  
Accurate Determination

scholarly journals Validation of the multinucleon transfer method for the determination of the fission barrier height

2019 ◽  
Vol 100 (1) ◽  
Author(s):  
K. R. Kean ◽  
K. Nishio ◽  
K. Hirose ◽  
M. J. Vermeulen ◽  
H. Makii ◽  
...  
Keyword(s):  
Barrier Height ◽  
Fission Barrier ◽  
Transfer Method

Gas chromatographic determination of the interconversion energy barrier for dimethyl-2,3-pentadienedioate enantiomers

2006 ◽  
Vol 29 (10) ◽  
pp. 1497-1507 ◽  
Author(s):  
Janka Mydlová ◽  
Jan Krupcík ◽  
Pavel Májek ◽  
Ivan Skacáni ◽  
Tibor Jakubík ◽  
...  
Keyword(s):  
Energy Barrier ◽  
Chromatographic Determination

Metal - Gan Contact Technology

1998 ◽  
Vol 514 ◽  
Author(s):  
S. S. Lau
Keyword(s):  
Barrier Height ◽  
Carrier Transport ◽  
Ohmic Contacts ◽  
Accurate Determination ◽  
Surface Cleaning ◽  
Metal Contacts ◽  
Metal Thin Films ◽  
Ohmic Behavior ◽  
Metal Silicides

ABSTRACTIn this talk, we summarize the experimental results obtained on metal-GaN interactions in our laboratory. These interactions include the epitaxial growth of metal thin films on chemically cleaned GaN surfaces, metal silicides for Schottky contacts and metallization schemes for ohmic contacts. We found that many fcc and hcp metals can grow epitaxially on (0001) GaN surfaces at room temperature without in-situ surface cleaning. Metal silicide contacts (such as PtSi) may be more suitable for high temperature applications than elemental contacts, due to the thermal stability of silicides. The intrinsic mechanisms for ohmic behavior for various metal contacts are not well understood at present. More consistent barrier height values measured experimentally can shed light on this issue. Due to the defective nature of the GaN layers, carrier transport across the metal/GaN interface can be due to a number of transport mechanisms, thus making accurate determination of the barrier height difficult. In spite of these difficulties, it seems possible to draw certain general conclusions on the electrical behavior of metal contacts on n-GaN.

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