scholarly journals On the origin of the anomalous peak in the resistivity of TiSe2

2019 ◽  
Vol 99 (19) ◽  
Author(s):  
Matthew D. Watson ◽  
Adam M. Beales ◽  
Philip D. C. King
Keyword(s):  
Author(s):  
Y. Feng ◽  
X. Y. Cai ◽  
R. J. Kelley ◽  
D. C. Larbalestier

The issue of strong flux pinning is crucial to the further development of high critical current density Bi-Sr-Ca-Cu-O (BSCCO) superconductors in conductor-like applications, yet the pinning mechanisms are still much debated. Anomalous peaks in the M-H (magnetization vs. magnetic field) loops are commonly observed in Bi2Sr2CaCu2Oy (Bi-2212) single crystals. Oxygen vacancies may be effective flux pinning centers in BSCCO, as has been found in YBCO. However, it has also been proposed that basal-plane dislocation networks also act as effective pinning centers. Yang et al. proposed that the characteristic scale of the basal-plane dislocation networksmay strongly depend on oxygen content and the anomalous peak in the M-H loop at ˜20-30K may be due tothe flux pinning of decoupled two-dimensional pancake vortices by the dislocation networks. In light of this, we have performed an insitu observation on the dislocation networks precisely at the same region before and after annealing in air, vacuumand oxygen, in order to verify whether the dislocation networks change with varying oxygen content Inall cases, we have not found any noticeable changes in dislocation structure, regardless of the drastic changes in Tc and the anomalous magnetization. Therefore, it does not appear that the anomalous peak in the M-H loops is controlled by the basal-plane dislocation networks.


1996 ◽  
Vol 35 (Part 1, No. 7) ◽  
pp. 3882-3886 ◽  
Author(s):  
Masaru Nakamura ◽  
Tsukasa Hirayama ◽  
Yasuji Yamada ◽  
Yuichi Ikuhara ◽  
Yuh Shiohara

1988 ◽  
Vol 135 ◽  
Author(s):  
M. O. Manasreh ◽  
D. O. Pederson ◽  
T. S. Aurora

AbstractMeasurements of the ultrasonic attenuation and velocity have been made in solid electrolytes with fluorite structure, PbF2, BaF2, and CdF2, from room temperature to temperature at or above the diffuse solid electrolyte transition temperature, Tc. The ultrasonic attenuation peaks observed in this class of materials are associated only with the ionic conductivity saturation rather than in combination with crystallographic phase transition found in many other solid electrolytes. The relaxation rates and Arrhenius activation energies for anion motion above the transition temperature were obtained from the temperature dependence of the ultrasonic attenuation and the theory of local site fluctuations. The ultrasonic attenuation peaks observed for the first time in CdF2was used to define the diffuse transition temperature in this material. An Anomalous peak is also observed in the linear thermal expansion coefficient of PbF2.


Coatings ◽  
2020 ◽  
Vol 10 (12) ◽  
pp. 1250
Author(s):  
Darina Manova ◽  
Patrick Schlenz ◽  
Jürgen W. Gerlach ◽  
Stephan Mändl

Expanded austenite γN formed after nitrogen insertion into austenitic stainless steel and CoCr alloys is known as a hard and very wear resistant phase. Nevertheless, no single composition and lattice expansion can describe this phase with nitrogen in solid solution. Using in situ X-ray diffraction (XRD) during ion beam sputtering of expanded austenite allows a detailed depth-dependent phase analysis, correlated with the nitrogen depth profiles obtained by time-of-flight secondary ion mass spectrometry (ToF-SIMS) or glow discharge optical emission spectroscopy (GDOES). Additionally, in-plane XRD measurements at selected depths were performed for strain analysis. Surprisingly, an anomalous peak splitting for the (200) expanded peak was observed for some samples during nitriding and sputter etching, indicating a layered structure only for {200} oriented grains. The strain analysis as a function of depth and orientation of scattering vector (parallel/perpendicular to the surface) is inconclusive.


1989 ◽  
Vol 158 (1-3) ◽  
pp. 240-241
Author(s):  
Takafumi Miyanaga ◽  
Iwao Watanabe ◽  
Shigero Ikeda

2016 ◽  
Vol 30 (4) ◽  
pp. 1103-1108
Author(s):  
A. M. Ionescu ◽  
I. Ivan ◽  
M. Enculescu ◽  
M. Grigoroscuta ◽  
D. Miu ◽  
...  

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