High Pinning Force Values of a Fe(Se, Te) Single Crystal Presenting a Second Magnetization Peak Phenomenon

The magnetization M of an Fe(Se, Te) single crystal has been measured as a function of temperature T and dc magnetic field H. The sample properties have been analyzed in the case of a magnetic field parallel to its largest face H||ab. From the M(T) measurement, the Tc of the sample and a magnetic background have been revealed. The superconducting hysteresis loops M(H) were between 2.5 K and 15 K showing a tilt due to the presence of a magnetic signal measured at T > Tc. From the M(H) curves, the critical current density Jc(H) has been extracted at different temperatures showing the presence of a second magnetization peak phenomenon. By extracting and fitting the Jc(T) curves at different fields, a pinning regime crossover has been identified and shown to be responsible for the origin of the second magnetization peak phenomenon. Then, the different kinds of pinning centers of the sample were investigated by means of Dew-Hughes analysis, showing that the pinning mechanism in the sample can be described in the framework of the collective pinning theory. Finally, the values of the pinning force density have been calculated at different temperatures and compared with the literature in order to understand if the sample is promising for high-current and high-power applications.

A precursor mechanism triggering the second magnetization peak phenomenon in superconducting materials

The correlation in type-II superconductors between the creep rate S and the Second Magnetization Peak (SMP) phenomenon which produces an increase in Jc, as a function of the field (H), has been investigated at different temperatures by starting from the minimum in S(H) and the onset of the SMP phenomenon detected on a FeSe0.5Te0.5 sample. Then the analysis has been extended by considering the entire S(H) curves and comparing our results with those of many other superconducting materials reported in literature. In this way, we find evidence that the flux dynamic mechanisms behind the appearance of the SMP phenomenon in Jc(H) are activated at fields well below those where the critical current starts effectively to increase. Moreover, the found universal relation between the minimum in the S(H) and the SMP phenomenon in Jc(H) shows that both can be attributed to a sequential crossover between a less effective pinning (losing its effectiveness at low fields) to a more effective pinning (still acting at high fields), regardless of the type-II superconductor taken into consideration.

Second magnetization peak, rhombic-to-square Bragg vortex glass transition, and intersecting magnetic hysteresis curves in overdoped BaFe2(As1−xPx)2 single crystals

The second magnetization peak (SMP) in the fourfold symmetric superconducting single crystals (such as iron pnictides and tetragonal cuprates) has been attributed to the rhombic-to-square transition (RST) of the quasi-ordered vortex solid (the Bragg vortex glass, BVG). This represents an alternative to the pinning-induced BVG disordering as the actual SMP mechanism. The analysis of the magnetic response of BaFe2(As1−xPx)2 specimens presented here shows that the SMP is not generated by the RST. However, the latter can affect the pinning-dependent SMP onset field if this is close to the (intrinsic) RST line, through the occurrence of a “shoulder” on the magnetic hysteresis curves m(H), and a maximum in the temperature variation of the DC critical current density. These features disappear in AC conditions, where the vortex system is dynamically ordered in the RST domain, emphasizing the essential role of vortex dislocations for an efficient accommodation of the vortex system to the pinning landscape and the SMP development. The m(H) shoulder is associated with a precipitous pinning-induced proliferation of dislocations at the RST, where the BVG elastic “squash” modulus softens. The DC magnetization relaxation indicates that the pinning-induced vortex system disordering continues above the RST domain, as the basic SMP mechanism.