scholarly journals Gate-tunable electronic transport in p -type GaSb quantum wells

2019 ◽  
Vol 99 (11) ◽  
Author(s):  
Matija Karalic ◽  
Christopher Mittag ◽  
Michael Hug ◽  
Thomas Tschirky ◽  
Werner Wegscheider ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Electronic Transport ◽  
P Type

Electronic transport in n- and p-type modulation-doped GaInNAs/GaAs quantum wells

2009 ◽  
Vol 40 (3) ◽  
pp. 403-405 ◽  
Author(s):  
Y. Sun ◽  
N. Balkan ◽  
A. Erol ◽  
M.C. Arikan
Keyword(s):  
Quantum Wells ◽  
Electronic Transport ◽  
P Type

Electronic transport in n- and p-type modulation doped GaxIn1−xNyAs1−y/GaAs quantum wells

2009 ◽  
Vol 21 (17) ◽  
pp. 174210 ◽  
Author(s):  
Y Sun ◽  
N Balkan ◽  
M Aslan ◽  
S B Lisesivdin ◽  
H Carrere ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Electronic Transport ◽  
P Type

Electronic transport in p-type Mg-doped GaAs nanowires

2016 ◽  
Vol 253 (10) ◽  
pp. 1960-1964 ◽  
Author(s):  
N. Cifuentes ◽  
H. Limborço ◽  
E. R. Viana ◽  
D. B. Roa ◽  
A. Abelenda ◽  
...  
Keyword(s):  
Electronic Transport ◽  
Gaas Nanowires ◽  
P Type ◽  
Mg Doped

Electronic Transport Properties of Hot-Pressed B6Si

1987 ◽  
Vol 97 ◽  
Author(s):  
C. Wood ◽  
D. Emin ◽  
R. S. Feigelson ◽  
I. D. R. Mackinnon
Keyword(s):  
Electrical Conductivity ◽  
Seebeck Coefficient ◽  
Transport Properties ◽  
Electronic Transport ◽  
Hall Mobility ◽  
Anomalous Behavior ◽  
Nominal Composition ◽  
Electronic Transport Properties ◽  
Increasing Temperature ◽  
P Type

ABSTRACTMeasurements of the electrical conductivity, Seebeck coefficient and Hall mobility from -300 K to -1300 K have been carried out on multiphase hotpressed samples of the nominal composition B6Si. In all samples the conductivity and the p-type Seebeck coefficient both increase smoothly with increasing temperature. By themselves, these facts suggest small-polaronic hopping between inequivalent sites. The measured Hall mobilities are always low, but vary in sign. A possible explanation is offered for this anomalous behavior.

Temperature Dependence of Photoresponse in p-Type GaAs/AlGaAs Multiple Quantum Wells: Theory and Experiment

1999 ◽  
Vol 607 ◽  
Author(s):  
F. Szmulowicz ◽  
A. Shen ◽  
H. C. Liu ◽  
G. J. Brown ◽  
Z. R. Wasilewski ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Temperature Dependence ◽  
Bound States ◽  
Light Hole ◽  
Multiple Quantum ◽  
Temperature Dependent ◽  
Long Wavelength ◽  
Hole Level ◽  
Polarization Characteristics ◽  
P Type

AbstractThis paper describes a study of the photoresponse of long-wavelength (LWIR) and mid-infrared (MWIR) p-type GaAs/AlGaAs quantum well infrared photodetectors (QWIPs) as a function of temperature and QWIP parameters. Using an 8x8 envelope-function model (EFA), we designed and calculated the optical absorption of several bound-to-continuum (BC) structures, with the optimum designs corresponding to the second light hole level (LH2) coincident with the top of the well. For the temperature-dependent study, one non-optimized LWIR and one optimized MWIR samples were grown by MBE and their photoresponse and absorption characteristics measured to test the theory. The theory shows that the placement of the LH2 resonance at the top of the well for the optimized sample and the presence of light-hole-like quasi-bound states within the heavy-hole continuum for the nonoptimized sample account for their markedly different thermal and polarization characteristics. In particular, the theory predicts that, for the LWIR sample, the LH-like quasi-bound states should lead to an increased Ppolarized photoresponse as a function of temperature. Our temperature dependent photoresponse measurements corroborate most of the theoretical findings with respect to the long-wavelength threshold, shape, and polarization and temperature dependence of the spectra.

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