Inverted Dirac-electron population for broadband lasing in a thermally activated p -type topological insulator

2019 ◽  
Vol 99 (8) ◽  
Author(s):  
K. Sumida ◽  
Y. Ishida ◽  
T. Yoshikawa ◽  
J. Chen ◽  
M. Nurmamat ◽  
...  
Keyword(s):  
Topological Insulator ◽  
Electron Population ◽  
Thermally Activated ◽  
Dirac Electron ◽  
P Type

scholarly journals Visible Light Activated Room Temperature Gas Sensors Based on CaFe2O4 Nanopowders

Proceedings ◽  
2018 ◽  
Vol 2 (13) ◽  
pp. 834 ◽  
Author(s):  
Qomaruddin ◽  
Cristian Fàbrega ◽  
Andreas Waag ◽  
Andris Šutka ◽  
Olga Casals ◽  
...  
Keyword(s):  
Visible Light ◽  
Gas Sensors ◽  
Room Temperature ◽  
Oxide Semiconductor ◽  
Light Activation ◽  
Thermally Activated ◽  
Green Led ◽  
Sensor Activation ◽  
P Type ◽  
Visible Light Activation

Gas sensors based on CaFe2O4 nanopowders, which are p–type metal oxide semiconductor (MOX), have been fabricated and assessed for ethanol gas monitoring under visible light activation at room temperature. Regardless of their inferior sensitivity compared to thermally activated counterparts, the developed sensors have shown responsive sensing behavior towards ethanol vapors confirming the ability of using visible light for sensor activation. LEDs with different wavelengths (i.e., 465–590 nm) were employed. The highest sensitivity (3.7%) was reached using green LED activation that corresponds to the band gap of CaFe2O4.

scholarly journals Electrical Detection of the Helical Spin Texture in a p-type Topological Insulator Sb2Te3

2016 ◽  
Vol 6 (1) ◽  
Author(s):  
C. H. Li ◽  
O. M. J. van ‘t Erve ◽  
Y. Y. Li ◽  
L. Li ◽  
B. T. Jonker
Keyword(s):  
Topological Insulator ◽  
Electrical Detection ◽  
Spin Texture ◽  
P Type

DEFECT PHYSICS AND INTRINSIC p-TYPE CONDUCTIVITY IN TOPOLOGICAL INSULATOR AuTlS2

2014 ◽  
Vol 28 (02) ◽  
pp. 1450008 ◽  
Author(s):  
JIAN-MIN ZHANG ◽  
WANGXIANG FENG ◽  
PEI YANG ◽  
LIJIE SHI ◽  
YING ZHANG
Keyword(s):  
Point Defects ◽  
Topological Insulator ◽  
First Principles ◽  
Optimal Growth ◽  
Growth Conditions ◽  
First Principles Calculations ◽  
Type Conductivity ◽  
Native Point Defects ◽  
P Type ◽  
Optimal Growth Condition

Using first-principles calculations, we systematically investigate the defect physics in topological insulator AuTlS 2. An optimal growth condition is explicitly proposed to guide for the experimental synthesis. The stabilities of various native point defects under different growth conditions and different carrier environments are studied in detail. We show that the p-type conductivity is strongly preferred in AuTlS 2, and the band gap can be engineered by the control of intrinsic defects. Our results demonstrate that AuTlS 2 is an ideal p-type topological insulator which can be easily integrated with traditional semiconductor.

scholarly journals Температурная активация электронов проводимости в двойной квантовой яме HgTe/CdHgTe p-типа проводимости со слоями HgTe критической толщины

2019 ◽  
Vol 53 (7) ◽  
pp. 935
Author(s):  
С.М. Подгорных ◽  
М.В. Якунин ◽  
С.С. Криштопенко ◽  
М.Р. Попов ◽  
Н.Н. Михайлов ◽  
...  
Keyword(s):  
Hall Effect ◽  
Critical Thickness ◽  
Quantum Hall ◽  
Double Quantum ◽  
Thermally Activated ◽  
Double Quantum Well ◽  
Temperature Dependences ◽  
P Type ◽  
The Magnetic Field ◽  
Lateral Maximum

AbstractThe temperature dependences of the Hall coefficient and magnetoresistivity of a p -type HgTe/CdHgTe double quantum well with HgTe layers of critical thickness in the temperature range T = 35–300 K under magnetic fields up to 9 T are investigated. The position of the earlier observed reentrant quantum Hall transition from plateau i = 1 to plateau i = 2 is found to be close to the transition field from light to heavy holes with an increase in the magnetic field in the classical Hall effect. It is found that thermally activated light electrons contribute to the Hall effect along with light and heavy holes at T ≥ 35 K. The activation energy of electrons is estimated from the temperature dependence of the electron concentration as 28 meV, which exceeds the calculated value from the lateral maximum of the valence subband to the edge of the lowest conduction subband, probably because of heterostructure asymmetry.

Non thermally-activated transients and buffer traps in GaN transistors with p-type gate: A new method for extracting the activation energy

2020 ◽  
Vol 114 ◽  
pp. 113842
Author(s):  
A. Nardo ◽  
M. Meneghini ◽  
A. Barbato ◽  
C. De Santi ◽  
G. Meneghesso ◽  
...  
Keyword(s):  
Activation Energy ◽  
New Method ◽  
Thermally Activated ◽  
P Type

Dirac electron states formed at the heterointerface between a topological insulator and a conventional semiconductor

2014 ◽  
Vol 13 (3) ◽  
pp. 253-257 ◽  
Author(s):  
R. Yoshimi ◽  
A. Tsukazaki ◽  
K. Kikutake ◽  
J. G. Checkelsky ◽  
K. S. Takahashi ◽  
...  
Keyword(s):  
Topological Insulator ◽  
Electron States ◽  
Dirac Electron

Analysis of Carrier Transport Mechanism for p-Type SnO Thin-Film Transistor

2017 ◽  
Vol 748 ◽  
pp. 122-126
Author(s):  
Jian Qin ◽  
Lei Qiang
Keyword(s):  
Thin Film ◽  
Carrier Transport ◽  
Conduction Mechanism ◽  
Thin Film Transistor ◽  
Drain Current ◽  
Thermally Activated ◽  
Multiple Trapping ◽  
P Type ◽  
Tin Monoxide ◽  
Thermally Activated Process

Temperature effect on the I-V characteristics of tin monoxide thin film transistors (SnO TFTs) has been analyzed. The result shows that the drain current of the SnO TFT obeys the Meyer-Neldel rule under low temperature, where current conduction is a thermally activated process. The carrier transport would be dominated by multiple trapping conduction, while, percolation conduction mechanism holds as the temperature increase.

High Temperature Thermoelectric Properties of Boron Carbide

1991 ◽  
Vol 234 ◽  
Author(s):  
T. L. Aselage
Keyword(s):  
Thermal Conductivity ◽  
High Temperature ◽  
Thermoelectric Properties ◽  
Power Conversion ◽  
Unusual Structure ◽  
Thermally Activated ◽  
Structure And Bonding ◽  
Increasing Temperature ◽  
P Type ◽  
Very High

ABSTRACTBoron carbides are refractory solids with potential for application as very high temperature p-type thermoelectrics in power conversion applications. The thermoelectric properties of boron carbides are unconventional. In particular, the electrical conductivity is consistent with the thermally activated hopping of a high density (≈ 1021/cm3) of bipolarons; the Seebeck coefficient is anomalously large and increases with increasing temperature; and the thermal conductivity is surprisingly low. In this paper, these unusual properties and their relationship to the unusual structure and bonding present in boron carbides are reviewed. Finally, the potential for utilization of boron carbides at very high temperatures (up to 2200°C) and for preparing n-type materials is discussed.

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