Dirac electron states formed at the heterointerface between a topological insulator and a conventional semiconductor

2014 ◽  
Vol 13 (3) ◽  
pp. 253-257 ◽  
Author(s):  
R. Yoshimi ◽  
A. Tsukazaki ◽  
K. Kikutake ◽  
J. G. Checkelsky ◽  
K. S. Takahashi ◽  
...  
2019 ◽  
Vol 99 (8) ◽  
Author(s):  
K. Sumida ◽  
Y. Ishida ◽  
T. Yoshikawa ◽  
J. Chen ◽  
M. Nurmamat ◽  
...  

2014 ◽  
Vol 26 (48) ◽  
pp. 485003 ◽  
Author(s):  
V N Men'shov ◽  
V V Tugushev ◽  
T V Menshchikova ◽  
S V Eremeev ◽  
P M Echenique ◽  
...  

2004 ◽  
Vol 19 (28) ◽  
pp. 2121-2127 ◽  
Author(s):  
V. R. KHALILOV

Exact analytic solutions are found to the Dirac equation in (2+1) dimensions for a combination of Aharonov–Bohm and Lorentz 3-vector Coulomb potentials. By means of solutions obtained the relativistic Aharonov–Bohm effect is studied for free and bound electron states.


2014 ◽  
Vol 23 (10) ◽  
pp. 107304 ◽  
Author(s):  
Huai-Hua Shao ◽  
Yi-Man Liu ◽  
Xiao-Ying Zhou ◽  
Guang-Hui Zhou

2014 ◽  
Vol 90 (11) ◽  
Author(s):  
Jian Li ◽  
Wen-Kai Lou ◽  
Dong Zhang ◽  
Xiao-Jing Li ◽  
Wen Yang ◽  
...  

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
A. S. Kazakov ◽  
A. V. Galeeva ◽  
A. I. Artamkin ◽  
A. V. Ikonnikov ◽  
L. I. Ryabova ◽  
...  

AbstractIn this paper, we show that electron states formed in topological insulators at the interfaces topological phase–trivial phase and topological phase–vacuum may possess different properties. This is demonstrated on an example of heterostructures based on thick topological Hg1−xCdxTe films, in which the PT-symmetric terahertz photoconductivity is observed. It is shown that the effect originates from features of the interface topological film–trivial buffer/cap layer. The PT-symmetric terahertz photoconductivity is not provided by electron states formed at the interface topological film–vacuum.


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