scholarly journals Electrical Detection of the Helical Spin Texture in a p-type Topological Insulator Sb2Te3

2016 ◽  
Vol 6 (1) ◽  
Author(s):  
C. H. Li ◽  
O. M. J. van ‘t Erve ◽  
Y. Y. Li ◽  
L. Li ◽  
B. T. Jonker
2019 ◽  
Vol 99 (8) ◽  
Author(s):  
K. Sumida ◽  
Y. Ishida ◽  
T. Yoshikawa ◽  
J. Chen ◽  
M. Nurmamat ◽  
...  

2014 ◽  
Vol 28 (02) ◽  
pp. 1450008 ◽  
Author(s):  
JIAN-MIN ZHANG ◽  
WANGXIANG FENG ◽  
PEI YANG ◽  
LIJIE SHI ◽  
YING ZHANG

Using first-principles calculations, we systematically investigate the defect physics in topological insulator AuTlS 2. An optimal growth condition is explicitly proposed to guide for the experimental synthesis. The stabilities of various native point defects under different growth conditions and different carrier environments are studied in detail. We show that the p-type conductivity is strongly preferred in AuTlS 2, and the band gap can be engineered by the control of intrinsic defects. Our results demonstrate that AuTlS 2 is an ideal p-type topological insulator which can be easily integrated with traditional semiconductor.


2019 ◽  
Vol 19 (8) ◽  
pp. 917-923 ◽  
Author(s):  
Tae-Ha Hwang ◽  
Hong-Seok Kim ◽  
Hoil Kim ◽  
Jun Sung Kim ◽  
Yong-Joo Doh

2015 ◽  
Vol 91 (16) ◽  
Author(s):  
M. Bianchi ◽  
F. Song ◽  
S. Cooil ◽  
Å. F. Monsen ◽  
E. Wahlström ◽  
...  

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