scholarly journals Plasmons in realistic graphene/hexagonal boron nitride moiré patterns

2019 ◽  
Vol 99 (3) ◽  
Author(s):  
Andrea Tomadin ◽  
Marco Polini ◽  
Jeil Jung
Keyword(s):  
Boron Nitride ◽  
Hexagonal Boron Nitride ◽  
Moire Patterns ◽  
Moiré Patterns

scholarly journals Strain-Engineered Graphene Grown on Hexagonal Boron Nitride by Molecular Beam Epitaxy

2016 ◽  
Vol 6 (1) ◽  
Author(s):  
Alex Summerfield ◽  
Andrew Davies ◽  
Tin S. Cheng ◽  
Vladimir V. Korolkov ◽  
YongJin Cho ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Boron Nitride ◽  
Molecular Beam ◽  
Hexagonal Boron Nitride ◽  
Strain Relaxation ◽  
Topological Defects ◽  
Graphene Layers ◽  
Moire Patterns ◽  
Highly Strained ◽  
Moiré Patterns

Abstract Graphene grown by high temperature molecular beam epitaxy on hexagonal boron nitride (hBN) forms continuous domains with dimensions of order 20 μm, and exhibits moiré patterns with large periodicities, up to ~30 nm, indicating that the layers are highly strained. Topological defects in the moiré patterns are observed and attributed to the relaxation of graphene islands which nucleate at different sites and subsequently coalesce. In addition, cracks are formed leading to strain relaxation, highly anisotropic strain fields, and abrupt boundaries between regions with different moiré periods. These cracks can also be formed by modification of the layers with a local probe resulting in the contraction and physical displacement of graphene layers. The Raman spectra of regions with a large moiré period reveal split and shifted G and 2D peaks confirming the presence of strain. Our work demonstrates a new approach to the growth of epitaxial graphene and a means of generating and modifying strain in graphene.

scholarly journals Electronic properties of bilayer sheets forming moiré patterns

2021 ◽  
Vol 24 (1) ◽  
pp. 13701
Author(s):  
W.S. Wu-Mei ◽  
R.R. Rey-González
Keyword(s):  
Boron Nitride ◽  
Nearest Neighbor ◽  
Periodic Structures ◽  
Tight Binding ◽  
Electronic Band ◽  
Moire Patterns ◽  
Energy Approximation ◽  
Electronic Dispersion ◽  
Semi Empirical ◽  
Moiré Patterns

In this article, we report the electronic band structures of hexagonal bilayer systems, specifically, rotated graphene-graphene and boron nitride-boron nitride bilayers, by introducing an angle between the layers and forming new periodic structures, known as moiré patterns. Using a semi-empirical tight-binding approach with a parametrized hopping parameter between the layers, using one orbital per-site approximation, and taking into account nearest-neighbor interactions only, we found he electronic dispersion relations to be around K points in a low energy approximation. Our results show that graphene bilayers exhibit zero band gap for all angles tested in this work. In boron nitride bilayers, the results reveal a tunable bandgap that satisfies the prediction of the bandgap found in one-dimensional diatomic systems presented in the literature.

Evidence from Moiré Patterns of Packing Faults in Boron Nitride Crystals

Nature ◽  
1957 ◽  
Vol 180 (4583) ◽  
pp. 425-427 ◽  
Author(s):  
J. F. GOODMAN
Keyword(s):  
Boron Nitride ◽  
Moire Patterns ◽  
Moiré Patterns

Moire Fringes on Precipitates in Quenched and Aged Beryllium

1968 ◽  
Vol 26 ◽  
pp. 426-427
Author(s):  
F. J. Fraikor ◽  
A. W. Brewer
Keyword(s):  
Ternary Phase ◽  
Volume Fraction ◽  
Age Hardening ◽  
Orientation Relationships ◽  
Solute Content ◽  
Moiré Fringes ◽  
Moire Patterns ◽  
Total Volume Fraction ◽  
Diffraction Patterns ◽  
Moiré Patterns

A number of investigators have examined moire patterns on precipitate particles in various age-hardening alloys. For example, Phillips has analyzed moire fringes at cobalt precipitates in copper and Von Heimendahl has reported on moire fringes in the system Al-Au. Recently, we have observed moire patterns on impurity precipitates in beryllium quenched in brine from 1000°C and aged at various temperatures in the range of 500-800°C. This heat treatment of beryllium rolled from vacuum cast ingots produces the precipitation of both an fee ternary phase, AlFeBe4, and an hcp binary phase, FeBe11. However, unlike a typical age-hardening alloy, the solute content of this material is low (less than 1000 ppm of Fe and 600 ppm of Al) and hence the total volume fraction of precipitates is small. Therefore there is some difficulty in distinguishing the precipitates and their orientation relationships with the beryllium matrix since the weak precipitate spots generally do not appear on the diffraction patterns.

Marcus-Hush Theory Revealed by Electron Tunneling Through Hexagonal Boron Nitride

2019 ◽  
Author(s):  
Matěj Velický ◽  
Sheng Hu ◽  
Colin R. Woods ◽  
Peter S. Toth ◽  
Viktor Zólyomi ◽  
...  
Keyword(s):  
Electron Transfer ◽  
Boron Nitride ◽  
Electron Tunneling ◽  
Hexagonal Boron Nitride ◽  
Large Body ◽  
Liquid Solution ◽  
Limiting Current ◽  
Electron Transfer Rate Constant ◽  
Electrochemical Parameters ◽  
Voltammetric Measurements

Marcus-Hush theory of electron transfer is one of the pillars of modern electrochemistry with a large body of supporting experimental evidence presented to date. However, some predictions, such as the electrochemical behavior at microdisk electrodes, remain unverified. Herein, we present a study of electron tunneling across a hexagonal boron nitride barrier between a graphite electrode and redox levels in a liquid solution. This was achieved by the fabrication of microdisk electrodes with a typical diameter of 5 µm. Analysis of voltammetric measurements, using two common redox mediators, yielded several electrochemical parameters, including the electron transfer rate constant, limiting current, and transfer coefficient. They show a significant departure from the Butler-Volmer behavior in a clear manifestation of the Marcus-Hush theory of electron transfer. In addition, our system provides a novel experimental platform, which could be applied to address a number of scientific problems such as identification of reaction mechanisms, surface modification, or long-range electron transfer.

Measurement of Moiré Patterns in 3D Display

2019 ◽  
pp. 986
Author(s):  
Hea In Jeong ◽  
Seo Young Choi ◽  
Young Ju Jeong
Keyword(s):  
3D Display ◽  
Moire Patterns ◽  
Moiré Patterns
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